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Method of making a semiconductor device having a gate all around type of thin film transistor

  • US 5,578,513 A
  • Filed: 04/20/1995
  • Issued: 11/26/1996
  • Est. Priority Date: 09/17/1993
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming an insulating film on a substrate;

    forming an opening in the insulating film by anisotropic etching;

    embedding a dummy member in the opening;

    forming a channel member over the insulating film and the dummy member;

    removing the dummy member to form a gap in the opening between the channel member and the substrate; and

    forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.

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