Method of making a semiconductor device having a gate all around type of thin film transistor

• US 5,578,513 A
• Filed: 04/20/1995
• Issued: 11/26/1996
• Est. Priority Date: 09/17/1993
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Maegawa, Shigeto
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/425,646
• Time in Patent Office: 586 Days
• Field of Search: 437/21, 437/40 TFT, 437/62, 437/927, 148/DIG. 73
• US Class Current: 438/151
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/6675 Amorphous silicon or polysilicon transistors
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A method of manufacturing a semiconductor device including forming an insulating film on a substrate; forming an opening in the insulating film by anisotropic etching; embedding a dummy member in the opening; forming a channel member over the insulating film and the dummy member; removing the dummy member to form a gap in the opening between the channel member and the substrate; and forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming an insulating film on a substrate;

forming an opening in the insulating film by anisotropic etching;

embedding a dummy member in the opening;

forming a channel member over the insulating film and the dummy member;

removing the dummy member to form a gap in the opening between the channel member and the substrate; and

forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.

2. The method according to claim 1 comprising, after removing the dummy member, subjecting the channel member to a heat treatment to form an oxide film on a surface of the channel member.

3. The method according to claim 1 comprising, after embedding the dummy member, forming an oxide film on the dummy member.

4. The method according to claim 1 wherein embedding the dummy member comprises depositing a silicon nitride film in the opening by plasma chemical vapor deposition.

5. The method according to claim 1 wherein forming the insulating film comprises depositing a silicon nitride film on the substrate by chemical vapor deposition and embedding the dummy member comprises depositing a silicon oxide film in the opening by chemical vapor deposition.

6. The method according to claim 1 wherein embedding the dummy member comprises depositing a silicon oxide film containing at least one dopant impurity in the opening by chemical vapor deposition.

7. A method of manufacturing a semiconductor device comprising:

forming an insulating film on a substrate;

forming a dummy pattern over the insulating film;

forming a channel member over the insulating film and the dummy pattern;

removing the dummy member to form a gap between the channel member and the insulating film; and

forming a thin film on the channel member and in the gap covering the channel member, the thin film being a control electrode of a transistor for forming channels on opposite sides of the channel member.

8. The method according to claim 7 comprising, after removing the dummy pattern, subjecting the channel member to a heat treatment to form an oxide film on a surface of the channel member.

9. The method according to claim 7 comprising, after forming the dummy pattern, forming an oxide film on the dummy pattern.

10. The method according to claim 7 wherein forming the dummy member comprises depositing a silicon nitride film on the insulating film by plasma chemical vapor deposition.

11. The method according to claim 7 wherein depositing the insulating film comprises depositing a silicon nitride film on the substrate by chemical vapor deposition and forming the dummy pattern comprises depositing a silicon oxide film on the insulating film by chemical vapor deposition.

12. The method according to claim 7 wherein forming the dummy pattern comprises depositing a silicon oxide film containing at least one dopant impurity on the insulating film by chemical vapor deposition.

13. A method of manufacturing a semiconductor device comprising:

forming a first control electrode on an insulating film disposed on a substrate;

forming a dummy pattern over the first control electrode;

forming a second control electrode over the first control electrode and the dummy pattern;

removing the dummy pattern to form a gap between the first and second control electrodes; and

forming a channel member on the second control electrode and in the gap covering the second control electrode.