Method of fabrication glass diaphragm on silicon macrostructure

• US 5,578,528 A
• Filed: 05/02/1995
• Issued: 11/26/1996
• Est. Priority Date: 05/02/1995
• Status: Expired due to Term

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Hsieh, Tzung-Rue, Wu, Hui-Fen, Lei, Cuo-Lung, Wuu, Dong-Sing
• Primary Examiner(s): Kunemund, Robert
• Assistant Examiner(s): WHIPPLE, MATTHEW LAVERNE
• Application Number:
  US08/432,727
• Time in Patent Office: 574 Days
• Field of Search: 73/777, 73/754, 437/228, 437/238, 437/240, 437/901, 437/921, 437/927, 148/DIG. 73, 156/662.1, 361/283.2, 361/283.4, 310/324
• US Class Current: 216/2
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 2203/0315 Cavities
• CPC Class Codes: B81C 1/00158 Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/036 Fusion bonding
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
• CPC Class Codes: G01L 9/0052 of piezoresistive elements circuits therefor G01L9/06
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: Y10S 148/073 Hollow body

Abstract

A method for fabricating microelectromechanical systems containing a glass diaphragm formed on a silicon macrostructure is disclosed. The method comprises the steps of: (a) obtaining a silicon wafer and forming a cavity in the silicon wafer; (b) using a flame hydrolysis deposition technique to deposite glass soot into the cavity, the glass soot fills the cavity and extends onto the external surface of the silicon wafer so as to form a glass soot layer having a predetermined thickness; and (c) heat-consolidating the glass soot at temperatures between 850° and 1,350° C. so as to cause the glass soot to shrink and form a glass diaphragm over the cavity. The shrinkage ratio between the glass diaphragm and the glass soot layer is between 1:20 to 1:50. The silicon wafer can be further fabricated to contain a diaphragm-sealed cavity and/or a diaphragm-converted cantilever.

Claims

1. A method for fabricating a glass diaphragm on a silicon macrostructure comprising the steps of:

(a) obtaining a silicon wafer and forming a cavity in said silicon wafer;

(b) depositing a glass soot into said cavity and filling said cavity, said glass soot also being deposited in a contiguous manner over an external surface of said silicon wafer above said cavity so as to form a glass soot layer having a thickness;

(c) heat-consolidating said glass soot at temperatures between 850 and 1,350°

C. so as to cause said glass soot to shrink and form a glass diaphragm over said cavity.

2. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 wherein said glass soot is deposited into said cavity using a flame hydrolysis deposition technique.

3. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 2 wherein said flame hydrolysis deposition technique involves the following reaction:

space="preserve" listing-type="equation">SiCl.sub.4 +2H.sub.2 O→

SiO.sub.2 +4HCl.

4. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 3 wherein said reaction involves a reactant stream which comprises the components of hydrogen, oxygen, and SiCl₄.

5. A method for fabricating a glass diaphragm on a silicon macro structure according to claim 4 wherein said reactant stream further comprises BBr₃ or BCl₃.

6. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 4 wherein said reactant stream further comprises PCl₃ or POCl₃.

7. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 4 wherein said reactant stream further comprises a boron compound selected from the group consisting of BBr₃ and BCl₃ and a phosphorus compound selected from the group consisting of PCl₃ and POCl₃.

8. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 wherein said cavity is formed on said silicon wafer by an anisotropic etching method using an etchant containing KOH, IPA and H₂ O, at a temperature of about 85°

C.

9. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 wherein said cavity is a V-shaped groove.

10. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 wherein said cavity has a round-bottomed shape.

11. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 wherein said cavity has a trapezoidal shape.

12. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 wherein said glass soot layer is shrunk by a factor from about 20 to about 50 after said heat consolidating step.

13. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 which further comprises the step of fabricating said silicon wafer to form a diaphragm-sealed cavity or a diaphragm-converted cantilever.

14. A method for fabricating a glass diaphragm on a silicon macrostructure according to claim 1 which further comprises the step of etching a pattern on said glass diaphragm after said glass diaphragm is formed.