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Light-emitting gallium nitride-based compound semiconductor device

  • US 5,578,839 A
  • Filed: 11/17/1993
  • Issued: 11/26/1996
  • Est. Priority Date: 11/20/1992
  • Status: Expired due to Term
First Claim
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1. A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:

  • a light-emitting layer having first and second major surfaces and formed of a low-resistivity Inx Ga1-x N, where 0<

    x<

    1 ductor doped with an impurity;

    a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and

    a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light emitting layer;

    wherein said compound semiconductor of said light-emitting layer is of the n-type and is doped with a p-type impurity.

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