Light-emitting gallium nitride-based compound semiconductor device
First Claim
1. A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
- a light-emitting layer having first and second major surfaces and formed of a low-resistivity Inx Ga1-x N, where 0<
x<
1 ductor doped with an impurity;
a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and
a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light emitting layer;
wherein said compound semiconductor of said light-emitting layer is of the n-type and is doped with a p-type impurity.
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Accused Products
Abstract
A light-emitting gallium nitride-based compound semiconductor device of a double-heterostructure. The double-heterostructure includes a light-emitting layer formed of a low-resistivity Inx Ga1-x N (0<x<1) compound semiconductor doped with p-type and/or n-type impurity. A first clad layer is joined to one surface of the light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer. A second clad layer is joined to another surface of the light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from the light-emitting layer.
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Citations
39 Claims
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1. A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
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a light-emitting layer having first and second major surfaces and formed of a low-resistivity Inx Ga1-x N, where 0<
x<
1 ductor doped with an impurity;a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light emitting layer; wherein said compound semiconductor of said light-emitting layer is of the n-type and is doped with a p-type impurity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
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a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type Inx Ga1-x N, where 0<
x<
1, compound semiconductor doped with at least a p-type impurity;a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
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a light-emitting layer having first and second major surfaces and formed of a low-resistivity, n-type Inx Ga1-x N, where 0<
x<
1, compound semiconductor doped with an n-type impurity;a first clad layer joined to said first major surface of said light-emitting layer and formed of an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second major surface of said light-emitting layer and formed of a low-resistivity, p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A light-emitting gallium nitride-based compound semiconductor device having a double-heterostructure comprising:
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a light-emitting layer having first and second surfaces and comprising a low-resistivity III-V Group gallium nitride-based compound semiconductor containing indium, gallium and nitrogen and doped with an impurity; a first clad layer joined to said first surface of said light-emitting layer and comprising an n-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; and a second clad layer joined to said second surface of said light-emitting layer and comprising a low-resistivity p-type gallium nitride-based compound semiconductor having a composition different from that of said compound semiconductor of said light-emitting layer; wherein said light-emitting layer is n-type. - View Dependent Claims (33, 34, 35, 36, 37, 38, 39)
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Specification