×

Vertical MOSFET device having frontside and backside contacts

  • US 5,578,841 A
  • Filed: 12/18/1995
  • Issued: 11/26/1996
  • Est. Priority Date: 12/18/1995
  • Status: Expired due to Term
First Claim
Patent Images

1. A vertical MOSFET device, comprising:

  • a semiconductor substrate with a first side and a second side opposite the first side;

    an epitaxial layer over the first side, wherein the epitaxial layer has a source region, a drain region, and a channel region which couples the source region to the drain region, wherein the semiconductor substrate and the epitaxial layer have a combined thickness of approximately 20-100 microns;

    a source electrode electrically coupled to the source region, the source electrode located over the first side of the semiconductor substrate;

    a gate electrode over the channel region, the gate electrode located over the first side of the semiconductor substrate;

    a drain electrode coupled to the second side of the semiconductor substrate;

    flip chip bumps over the source electrode and the gate electrode; and

    an assembly substrate electrically coupled to the flip chip bumps.

View all claims
  • 7 Assignments
Timeline View
Assignment View
    ×
    ×