Contact stepper printed lithography method
First Claim
1. A contact stepper printed lithography method comprising:
- providing a mask structure formed of a flexible membrane;
bringing the mask structure within a predetermined distance adjacent to a first portion of a substrate to be patterned;
exposing the first portion of the substrate to a source of radiation propagating through the mask structure;
moving the mask structure within a predetermined distance adjacent to a second portion of the substrate; and
exposing the second portion to the source of radiation propagating through the mask structure.
2 Assignments
0 Petitions
Accused Products
Abstract
General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.
-
Citations
16 Claims
-
1. A contact stepper printed lithography method comprising:
-
providing a mask structure formed of a flexible membrane;
bringing the mask structure within a predetermined distance adjacent to a first portion of a substrate to be patterned;exposing the first portion of the substrate to a source of radiation propagating through the mask structure; moving the mask structure within a predetermined distance adjacent to a second portion of the substrate; and exposing the second portion to the source of radiation propagating through the mask structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A method of forming a lithographic fixed mask comprising the steps of:
-
providing a membrane including a semiconductor layer on a first low stress dielectric layer; forming a metal layer on the semiconductor layer; patterning the metal layer, thereby removing portions thereof; selectively etching portions of the semiconductor layer underlying the removed portions of the metal layer; depositing a second low stress dielectric layer over the patterned semiconductor layer; and removing the first low stress dielectric layer.
-
-
15. A method of forming a fixed stencil lithographic mask comprising the steps of:
-
providing a membrane including a semiconductor layer on a low stress dielectric layer; patterning the dielectric layer by etching away portions thereof; and patterning the semiconductor layer by etching away portions thereof. - View Dependent Claims (16)
-
Specification