Nanoelectric devices

• US 5,581,091 A
• Filed: 12/01/1994
• Issued: 12/03/1996
• Est. Priority Date: 12/01/1994
• Status: Expired due to Fees

• Current Assignee: Jing M. Xu, Martin Moskovits
• Original Assignee: Jing M. Xu, Martin Moskovits
• Inventors: Xu, Jing M., Moskovits, Martin
• Primary Examiner(s): WOJCIECHOWICZ, EDWARD JOSEPH
• Application Number:
  US08/352,151
• Time in Patent Office: 733 Days
• Field of Search: 257/9, 257/30, 257/49, 257/594, 257/622, 257/773, 437/71, 437/188, 437/203, 437/205
• US Class Current: 257/9
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10N 99/05 Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
• CPC Class Codes: Y10S 438/962 Quantum dots and lines
• CPC Class Codes: Y10S 977/937 Single electron transistor

Abstract

Single-electron devices useful as diodes, transistors or other electronic components are prepared by anodizing a metal substrate in sheet or foil form electrolytically in an acid bath, to deposit thereon an oxide film having axially disposed micropores of substantially uniform diameter in the range of from about 1 to about 500 nanometers and substantially uniform depth less than the thickness of the oxide film, leaving an ultra thin oxide layer between the bottom of each pore in the metal substrate. The conductive material is deposited in the pores to form nanowires contacting the oxide layer at the bottom of the pores. Macro metal is deposited over the ends of the nanowires for external electrical contact purposes. Devices can be made according to the present invention which are suitable to exhibit single-electron tunnelling effects and arrays of tunnel junction devices can be prepared having a density up to the order of 10¹⁰ per square cm.

Claims

1. A process of preparing single-electron devices comprising an array of elements each comprising at least two conductors contacting and separated by an ultrathin insulating or semiconducting layer, at least one of the conductors of each element being a nanowire, said process comprising:

providing a metal substrate in sheet or foil form, the metal thereof being selected from aluminum, titanium, niobium, tantalum and alloys containing a predominant amount of one of said metals;

anodizing said substrate electrolytically in an acid bath, to deposit thereon an oxide film having micropores of substantially mutually parallel axial disposition and substantially uniform diameter in the range from about 1 to about 500 nanometers and substantially uniform depth which is less than the thickness of the oxide film, so as to leave an ultrathin oxide layer between the bottom of each pore and the metal substrate;

depositing in said pores a conductive material, to form a nanowire in contact with the oxide layer at the bottom of said pore;

and depositing macro metal over the ends of the nanowires so formed, for external electrical contact purposes.

2. The process of claim 1, including the additional step of forming an insulating layer over the end of each nanowire, interposed between the end of the nanowire and the macrometal.

3. The process of claim 2 wherein said additional step is accomplished by chemical conversion of the distal end portion of the nanowires.

4. Single-electron devices comprising an array of single-electron elements, each said element comprising:

at least one nanowire conductor having a first end and a second end;

first and second ultrathin semi-conductive or insulating layers overlying and electrically contacting the first and second ends respectively of the nanowire conductor;

first and second macro metal layers respectively overlying and electrically contacting the said ultrathin layers, for external electrical connection purposes.

5. Single-electron devices according to claim 4 wherein one of said macro metal layers is a metal sheet or foil provided with a microporous metal oxide film on at least one side thereof, the nanowire conductors being metal deposited in the micropores thereof, and the residual metal film constituting one of said ultrathin layers.

6. Single-electron devices according to claim 5, wherein said metal sheet or foil is provided with a microporous metal oxide film on both sides thereof, with nanowire conductors formed of metal deposited in pores of both such films.