Nanoelectric devices
First Claim
1. A process of preparing single-electron devices comprising an array of elements each comprising at least two conductors contacting and separated by an ultrathin insulating or semiconducting layer, at least one of the conductors of each element being a nanowire, said process comprising:
- providing a metal substrate in sheet or foil form, the metal thereof being selected from aluminum, titanium, niobium, tantalum and alloys containing a predominant amount of one of said metals;
anodizing said substrate electrolytically in an acid bath, to deposit thereon an oxide film having micropores of substantially mutually parallel axial disposition and substantially uniform diameter in the range from about 1 to about 500 nanometers and substantially uniform depth which is less than the thickness of the oxide film, so as to leave an ultrathin oxide layer between the bottom of each pore and the metal substrate;
depositing in said pores a conductive material, to form a nanowire in contact with the oxide layer at the bottom of said pore;
and depositing macro metal over the ends of the nanowires so formed, for external electrical contact purposes.
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Accused Products
Abstract
Single-electron devices useful as diodes, transistors or other electronic components are prepared by anodizing a metal substrate in sheet or foil form electrolytically in an acid bath, to deposit thereon an oxide film having axially disposed micropores of substantially uniform diameter in the range of from about 1 to about 500 nanometers and substantially uniform depth less than the thickness of the oxide film, leaving an ultra thin oxide layer between the bottom of each pore in the metal substrate. The conductive material is deposited in the pores to form nanowires contacting the oxide layer at the bottom of the pores. Macro metal is deposited over the ends of the nanowires for external electrical contact purposes. Devices can be made according to the present invention which are suitable to exhibit single-electron tunnelling effects and arrays of tunnel junction devices can be prepared having a density up to the order of 1010 per square cm.
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Citations
6 Claims
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1. A process of preparing single-electron devices comprising an array of elements each comprising at least two conductors contacting and separated by an ultrathin insulating or semiconducting layer, at least one of the conductors of each element being a nanowire, said process comprising:
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providing a metal substrate in sheet or foil form, the metal thereof being selected from aluminum, titanium, niobium, tantalum and alloys containing a predominant amount of one of said metals; anodizing said substrate electrolytically in an acid bath, to deposit thereon an oxide film having micropores of substantially mutually parallel axial disposition and substantially uniform diameter in the range from about 1 to about 500 nanometers and substantially uniform depth which is less than the thickness of the oxide film, so as to leave an ultrathin oxide layer between the bottom of each pore and the metal substrate; depositing in said pores a conductive material, to form a nanowire in contact with the oxide layer at the bottom of said pore; and depositing macro metal over the ends of the nanowires so formed, for external electrical contact purposes. - View Dependent Claims (2, 3)
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4. Single-electron devices comprising an array of single-electron elements, each said element comprising:
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at least one nanowire conductor having a first end and a second end; first and second ultrathin semi-conductive or insulating layers overlying and electrically contacting the first and second ends respectively of the nanowire conductor; first and second macro metal layers respectively overlying and electrically contacting the said ultrathin layers, for external electrical connection purposes. - View Dependent Claims (5, 6)
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Specification