Stacked devices
First Claim
1. A semiconductor chip, comprising:
- a bulk single crystal substrate;
a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate, said trench adjacent one of an undoped region, and a lightly doped region, layer of a first material contacting said surface; and
an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench.
1 Assignment
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Accused Products
Abstract
Chips having subsurface structures within or adjacent a horizontal trench in bulk single crystal semiconductor are presented. Structures include three terminal devices, such as FETs and bipolar transistors, rectifying contacts, such as pn diodes and Schottky diodes, capacitors, and contacts to and connectors between devices. FETs have low resistance connectors to diffusions while retaining low overlap capacitance. A low resistance and low capacitance contact to subsurface electrodes is achieved by using highly conductive subsurface connectors which may be isolated by low dielectric insulator. Stacks of devices are formed simultaneously within bulk single crystal semiconductor. A subsurface CMOS invertor is described. A process for forming a horizontal trench exclusively in heavily doped p+ regions is presented in which porous silicon is first formed in the p+ regions and then the porous silicon is etched.
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Citations
48 Claims
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1. A semiconductor chip, comprising:
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a bulk single crystal substrate; a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate, said trench adjacent one of an undoped region, and a lightly doped region, layer of a first material contacting said surface; and an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A semiconductor chip, comprising:
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a bulk single crystal substrate; a first horizontal trench buried within said bulk single crystal substrate, said first horizontal trench comprising a surface of bulk single crystal substrate; an electronic device having a first portion adjacent said first horizontal trench, said first portion being within said bulk single crystal substrate, said device further comprising a second portion within said first horizontal trench; a vertical trench intersecting said portion; and a first electrically conductive material extending through said vertical trench and forming a contact with said portion. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A semiconductor chip, comprising:
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a bulk crystal semiconductor having a conventional planar surface; a first three-terminal device disposed in a first plane parallel to said surface comprising first and second electrodes within said bulk single crystal semiconductor, and a third control electrode that controls electrical connection between said first and second electrodes when said is operational; a second three-terminal device disposal in a second plane parallel to said surface comprising forth and fifth electrodes within said bulk single crystal semiconductor, and a sixth control electrode that controls electrical connection between said forth and fifth electrodes when said device is operational, a terminal of said second device being vertically displaced with respect to a respective terminal of said first device, said first device being connected to said second device; a vertical trench adjacent said first electrode; and a first conductive connector contacting said first electrode, said first conductive connector extending through said vertical trench. - View Dependent Claims (45, 46, 47, 48)
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Specification