Electrostatic chuck usable in high density plasma

• US 5,583,737 A
• Filed: 05/26/1995
• Issued: 12/10/1996
• Est. Priority Date: 12/02/1992
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Collins, Kenneth S., Ishikawa, Tetsuya, Ding, Jian, Marks, Jeffrey, Bright, Nicolas J., Roderick, Craig A., Trow, John R., Tsui, Joshua Chiu-Wing
• Primary Examiner(s): Fleming, Fritz M.
• Application Number:
  US08/452,351
• Time in Patent Office: 564 Days
• Field of Search: 361/234, 279/128
• US Class Current: 361/234
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks

Abstract

An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

Claims

1. A method for dechucking a wafer from an electrostatic chuck at the completion of a plasma process during which process a plasma is generated in a plasma chamber by RF source power, the wafer is held on the chuck by a DC potential, and said electrostatic chuck supplies a cooling gas to a backside of said wafer, said dechucking method comprising:

at the completion of said plasma process and while the RF source power is still on, turning off said cooling gas;

changing said DC potential of said electrostatic chuck;

slightly separating said wafer from said electrostatic chuck while said RF source plasma is still present;

after slightly separating said wafer from said electrostatic chuck, turning off the RF source power;

after turning off the RF source power, further separating said wafer from said electrostatic chuck; and

removing said wafer from said plasma chamber.

2. The dechucking method of claim 1 further comprising the step of beginning a process of vacating the cooling gas from said electrostatic chuck prior to slightly separating said wafer from said electrostatic chuck.

3. The dechucking method of claim 1 wherein the step of slightly separating said wafer from said electrostatic chuck involves raising said wafer to a distance of no greater than 60 mils above said electrostatic chuck.

4. The dechucking method of claim 3 wherein the step of slightly separating said wafer from said electrostatic chuck involves raising said wafer to a distance of between 10 and 60 mils above said electrostatic chuck.

5. The dechucking method of claim 1 wherein the step of slightly separating said wafer from said electrostatic chuck comprises using lift pins that are located within said electrostatic chuck to raise said wafer.

6. The dechucking method of claim 5 wherein said lift pins are made of a non-conducting material.

7. The dechucking method of claim 6 wherein said lift pins are made of a ceramic material.

8. The dechucking method of claim 1 further comprising the step of waiting a preselected delay period after changing said DC potential of said electrostatic chuck and before slightly separating said wafer from electrostatic chuck.

9. The dechucking method of claim 8 wherein the preselected delay period is at least 5 seconds.

10. The dechucking method of claim 1 wherein said electrostatic chuck is biased at a first potential during plasma processing and wherein the step of changing said DC potential of said electrostatic chuck involves reducing said DC potential of said electrostatic chuck to a second potential that is lower than the magnitude of the first potential.

11. The dechucking method of claim 10 wherein said wherein said second potential is at ground potential.

12. The dechucking method of claim 10 wherein said first potential is a negative voltage relative to ground potential.

13. The dechucking method of claim 12 wherein said first potential is more negative than about -500 volts relative to ground potential.

14. The dechucking method of claim 13 wherein said electrostatic chuck is biased by RF bias power during plasma processing and further comprising the step of:

at the completion of said plasma process and while the RF source power is still on, turning off said RF bias power.