Method and device for predicting wavelength dependent radiation influences in thermal systems

• US 5,583,780 A
• Filed: 12/30/1994
• Issued: 12/10/1996
• Est. Priority Date: 12/30/1994
• Status: Expired due to Fees

• Current Assignee: Sandia National Laboratories (Government of the United States of America)
• Original Assignee: Aili Ting, Robert J. Kee
• Inventors: Kee, Robert J., Ting, Aili
• Primary Examiner(s): Envall, Jr., Roy N.
• Assistant Examiner(s): KUNDUPOGLU, YONCHA LYNN
• Application Number:
  US08/366,579
• Time in Patent Office: 711 Days
• Field of Search: 364/149, 364/468
• US Class Current: 700/117
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A method and apparatus for predicting the spectral (wavelength-dependent) radiation transport in thermal systems including interaction by the radiation with partially transmitting medium. The predicted model of the thermal system is used to design and control the thermal system. The predictions are well suited to be implemented in design and control of rapid thermal processing (RTP) reactors. The method involves generating a spectral thermal radiation transport model of an RTP reactor. The method also involves specifying a desired wafer time dependent temperature profile. The method further involves calculating an inverse of the generated model using the desired wafer time dependent temperature to determine heating element parameters required to produce the desired profile. The method also involves controlling the heating elements of the RTP reactor in accordance with the heating element parameters to heat the wafer in accordance with the desired profile.

Claims

1. A method of controlling a rapid thermal processing (RTP) reactor for processing a silicon wafer under a desired wafer time dependent temperature profile, the RTP reactor including at least one heating element and a partially transmitting component separating the heating element and the wafer, the method comprising the steps of:

generating in a computer a spectral thermal radiation transport model of the RTP reactor for given heating element parameters;

inputting into the computer data specifying the desired wafer time dependent temperature profile;

selecting components for the RTP reactor based on the generated model;

calculating an inverse of the generated model using the data specifying the desired wafer time dependent temperature profile to determine heating element parameters required to produce the desired wafer time dependent temperature profile,

wherein the selecting step selects the components for the RTP reactor to meet control parameters indicated by the inverse of the generated model; and

controlling the heating elements of the RTP reactor in accordance with the heating element parameters to heat the wafer in accordance with the desired wafer time dependent temperature profile.

2. A method as recited in claim 1, wherein the inputting step comprises the steps of:

selecting a number of prescribed locations in the wafer; and

assigning each of the prescribed locations a corresponding temperature time dependence as the data specifying the desired wafer time dependent temperature profile.

3. A method of designing a rapid thermal processing (RTP) reactor for processing a silicon wafer, the RTP reactor including at least one lamp heating element and a partially transmitting component separating the lamp heating element and the wafer, the method comprising the steps of:

inputting data into a computer corresponding to a general design of the RTP reactor including at least a thermal transport characteristic of the partially transmitting component and the wafer and a general design of the thermal radiation characteristic of the lamp heating element;

generating in the computer a model of spectral thermal radiation transport of the RTP reactor based on the input data;

selecting components for the RTP reactor based on the model;

inputting data corresponding to a desired time dependent temperature profile of the wafer to be processed in the RTP reactor;

storing the data corresponding to the desired time dependent temperature profile in a memory;

retrieving the stored data and utilizing the computer to calculate an inverse of the model to obtain control parameters for the heating element necessary to heat the wafer in accordance with the retrieved data; and

providing a control portion to control the heating element based on the control parameters obtained from the inverse of the model.

4. A method as recited in claim 3, further comprising the step of utilizing the computer to calculate an inverse of the model, wherein the selecting step includes the step of selecting components for the RTP reactor to meet control parameters indicated by the inverse of the model.

5. A method of designing a rapid thermal processing (RTP) reactor for processing a silicon wafer, the RTP reactor to include at least one lamp heating element and a partially transmitting component separation the lamp heating element and the wafer, the method comprising the steps of:

inputting data into a computer corresponding to a general design of the RTP reactor including at least the thermal transport characteristic of the partially transmitting component and the wafer and the general design of the thermal radiation characteristic of the lamp heating element;

generating in the computer a model of spectral thermal radiation transport of the RTP reactor based on the input data; and

selecting components for the RTP reactor based on the model;

utilizing the computer to calculate an inverse of the model to obtain control parameters for the heating element necessary to heat the wafer in accordance with a desired time dependent temperature profile of the wafer to be processed in the RTP reactor; and

providing a control portion to control the heating element based on the control parameters obtained from the inverse of the model,

wherein the selecting step includes the step of selecting the components for the RTP reactor to meet the control parameters indicated by the inverse of the model.

6. A method as recited in claim 5, wherein the utilizing step comprises the steps of:

selecting a number of prescribed locations in the wafer;

assigning each of the prescribed locations a corresponding temperature time dependance; and

determining the control parameters for the heating element as a function of the corresponding temperature time dependance constrained by the model of the spectral thermal radiation transport of the RTP reactor.

7. A system including a modeling apparatus for accurately characterizing time dependent spectral thermal radiation transport of a thermal system, the thermal system including a first portion having one or more heating elements, and a second portion separated from the first portion by a partially transmitting medium, the modeling apparatus comprising:

an input device for inputting characteristics of the thermal system;

a memory connected to the input device for storing the thermal system characteristics, the thermal system characteristics including at least geometric parameters of the thermal system, a time dependent intensity profile of the heating elements and wavelength-dependent properties of the partially transmitting medium;

a processing unit connected to the memory, the processing unit predicting a time dependant spectral thermal radiation transport characteristic of the thermal system based on the thermal system characteristics,

said processing unit producing a characteristic model of the thermal system using the time dependant spectral thermal radiation transport characteristic.

8. A system as recited in claim 7, wherein the modeling apparatus further comprises:

a second input device for inputting inverse parameters specifying a desired thermal transport characteristic of the thermal system

wherein said processing unit is coupled to said second input and is configured to produce an inverse of the characteristic model, the inverse of the characteristic model indicating a characteristic of the thermal system which is necessary to produce the desired thermal transport characteristic.

9. A system as recited in claim 8, wherein the desired thermal transport characteristic is a time dependent temperature at a location within the second portion of the thermal system and the characteristic of the thermal system which is necessary to produce the desired thermal transport characteristic is a time dependent intensity profile of the heating elements.

10. The system as recited in claim 7, further comprising:

developing means coupled to the modeling apparatus for developing a control program for controlling the heating elements of the thermal system, the developing means receiving from the modeling apparatus temperature indications corresponding to a modeled temperature at selected locations within the characteristic model of the thermal system and providing to the modeling apparatus the time dependent intensity profile of the heating elements on a basis of heating element control parameters indicated by the control program;

add

input means coupled to the developing means for modifying the control program on a basis of an output from the modeling apparatus.

11. The system as recited in claim 10, further comprising interface means connected between the developing means and the modeling apparatus for controlling exchange of information between the developing means and the modeling apparatus.

12. The system as recited in claim 11, wherein the developing means and the modeling apparatus are simultaneously run on separate computing platforms and the interface means emulates an actual thermal system in real-time using an output from the modeling apparatus for the development of the control program.

13. The system as recited in claim 10, wherein the thermal system is coupled to the developing means, wherein the developing means receives actual real-time data from the thermal system which is used by the developing means to adjust the time dependent heating profile of the heating elements that is provided to the modeling apparatus, and wherein the system is a closed loop system.