Electron beam nano-metrology system

• US 5,585,629 A
• Filed: 01/11/1996
• Issued: 12/17/1996
• Est. Priority Date: 06/24/1994
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Moore, Richard D., Khoury, Henri A., Rockrohr, James D., Enichen, William A., Kendall, Rodney A., Groves, Timothy R., Doran, Samuel K., Petric, Paul F.
• Primary Examiner(s): Berman, Jack I.
• Application Number:
  US08/584,988
• Time in Patent Office: 341 Days
• Field of Search: 250/310, 250/396 R, 250/398, 250/397, 250/492.1, 250/491.1, 250/492.3, 250/442.11, 250/310
• US Class Current: 250/310
• CPC Class Codes: G01B 15/00 Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons characterised by the use of optical techniques G01B9/00, G01B11/00
• CPC Class Codes: H01J 2237/2814 Measurement of surface topography
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence

Abstract

An electron beam nanometer-level metrology tool includes an ambient temperature electron source and a movable stage for mounting a workpiece. The stage is adapted to position the workpiece'"'"'s surface in a beam interrogation region. Electrostatic focus lenses convert electrons emitted by the electron source into a beam with a focal point that is positioned in the beam interrogation region. The lenses cause the electron beam to traverse a path that is generally orthogonal to the workpiece surface. Along the beam path are positioned upper and lower electrostatic deflection plates which are connected to an adjustable voltage source that applies ganged, opposite-sense d/c potentials thereto. Those potentials enable a scanning of the beam across the beam interrogation region while the beam remains substantially orthogonal to the workpiece surface, thereby enabling more accurate measurements of surface features. Within the metrology tool, all beam control surfaces are electrostatic so as to minimize power dissipation and temperature differentials.

Claims

1. An electron beam, nanometer-level metrology tool for making precise measurements of relative positions of pattern features within an active pattern array of a workpiece, said tool comprising:

an ambient temperature electron source;

movable stage means for mounting a workpiece having a surface with physical features to be measured, and for positioning said workpiece surface in a beam interrogation region;

beam control means including ambient temperature electrostatic focus means for converting electrons emitted by said electron source into an electron beam with a focal point in said beam interrogation region, said electron beam traversing a path to said beam interrogation region that is generally orthogonal to said workpiece; and

means for determining distance measurements between submicron-sized features on said workpiece surface where the distance measurements are very large compared with the size of the features from interactions of said beam and workpiece surface.

2. The electron beam, nanometer-level metrology tool as recited in claim 1, wherein said opposite sense d.c. potentials are identical, opposite polarity voltages.

4. The electron beam, nanometer-level metrology tool as recited in claim 1, wherein said beam control means in said metrology tool are entirely electrostatic, so as to minimize power dissipation within said tool.

5. The electron beam nanometer-level metrology tool as recited in claim 1, wherein said electron source employs field emission to generate electrons.

6. The electron beam, nanometer-level metrology tool as recited in claim 5 further comprising:

means for applying a first high-level voltage to said electron source when said workpiece surface is conductive and for applying second lower level voltage to said electron source when said workpiece surface includes a dielectric feature, said second lower level voltage reducing charge buildup on said dielectric feature.

7. The electron beam, nanometer-level metrology tool as recited in claim 1, wherein said movable stage means comprises:

a first coarse movement stage for positioning said workpiece into said beam interrogation region;

a second fine movement stage for positioning said workpiece within said beam interrogation region;

laser interferometer means associated with said second fine movement stage and employing a laser beam for determining a position of said fine movement stage; and

control means for moving said first and second stages to assure that said laser beam is incident on said second fine movement stage at a position that is coplanar with said workpiece, so as to avoid Abbe errors.

8. The electron beam, nano-metrology tool as recited in claim 7, further comprising:

optical means for measuring a height of said workpiece from a datum, and for feeding a signal to said control means to enable an adjustment of said height.

9. The electron beam, nanometer-level metrology tool as recited in claim 1, further comprising:

a charge collector juxtaposed to said beam interrogation region and biased to attract stray electrons.

10. The electron beam, nanometer-level metrology tool as recited in claim 1, further comprising:

an ion gun juxtaposed to said beam interrogation region for supplying a source of positive ions; and

means for biasing said ion gun to enable a discharge of ions upon a negative charge buildup on a workpiece surface, said ions acting to neutralize said charge buildup.

11. The electron beam, nanometer-level metrology tool as recited in claim 1, wherein said beam control means further includes:

upper and lower electrostatic deflection means positioned in said path traversed by said beam; and

adjustable voltage means for applying d.c. voltages to said upper and lower electrostatic deflection means, respectively, for enabling a scanning of said beam across said beam interrogation region, while said beam remains substantially orthogonal to said workpiece surface, said adjustable voltage means including means for applying a positive voltage to one said electrostatic deflection means and a negative voltage to another said electrostatic deflection means and adjusting together said positive voltage and said negative voltage in opposite sense directions, that is, when one said voltage is adjusted positively, the other said voltage is adjusted negatively and vice-versa.

3. The electron beam, nanometer-level metrology tool as recited in claim 13, wherein each said upper and lower electrostatic deflection means comprises:

plural deflection plates positioned about said path, said adjustable voltage means enabling a two-dimensional deflection of said beam, while retaining said substantially orthogonal relationship of said beam to said workpiece surface.