Compound semiconductor devices and methods of making compound semiconductor devices
First Claim
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1. A semiconductor device providing a current blocking structure, comprising:
- a first semiconductor layer of a first conductive type of one of II-VI compound semiconductors and N-containing III-V compound semiconductors;
a second semiconductor layer of a second conductive type of one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the first semiconductor layer the second semiconductor layer having an aperture for partially leaving a surface of the first semiconductor layer exposed; and
a third layer of the first conductive type semiconductor comprising one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the first semiconductor layer and contacting the second semiconductor layer through the aperture.
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Abstract
A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semiconductor between the n-clad and p-clad layers, a very thin current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and providing an opening, a p-contact layer of p-type II-VI compound semiconductor on the p-clad layer and the current blocking layer at the opening, and a p-side electrode on the p-contact layer.
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Citations
19 Claims
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1. A semiconductor device providing a current blocking structure, comprising:
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a first semiconductor layer of a first conductive type of one of II-VI compound semiconductors and N-containing III-V compound semiconductors; a second semiconductor layer of a second conductive type of one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the first semiconductor layer the second semiconductor layer having an aperture for partially leaving a surface of the first semiconductor layer exposed; and a third layer of the first conductive type semiconductor comprising one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the first semiconductor layer and contacting the second semiconductor layer through the aperture. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9)
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8. The semiconductor contact structure according to claim 8, wherein the depression and the hollow are formed in a single etching step.
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10. A semiconductor laser comprising:
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a semiconductor substrate of n-type; an n-clad layer of II-VI compound semiconductor on the substrate; an active layer of II-VI compound semiconductor on the n-clad layer; a p-clad layer of II-VI compound semiconductor on the active layer; a current blocking layer of n-type II-VI compound semiconductor on the p-clad layer and having an opening; a buried p-contact layer of p-ZnSeS on the current blocking layer and contacting the p-clad layer through the opening of the current blocking layer; a p-contact layer of p-ZnTe on the buried p-contact layer; a first electrode in contact with the p-contact layer; and a second electrode in contact with the semiconductor substrate; and a super lattice comprising ZeSe layers, ZnSeTe layers, and ZnTe layers between the buried p-contact layer and the p-contact layer wherein the super lattice comprises a first portion of p-ZnSe layers and p-ZnSeTe layers at a side of the buried p-contact layer, and a second portion of p-ZnSeTe layers and p-ZnTe layers at a side of the p-contact layer.
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11. A semiconductor device comprising:
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an n-clad layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors; a p-clad layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors; an active layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors between the n-clad and p-clad layers; a current blocking layer of n-type semiconductor comprising one of II-VI compound semiconductors and N-containing III-V compound semiconductors, disposed on the p-clad layer and providing an opening; a p-contact layer of p-type semiconductor comprising one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the current blocking layer and contacting the p-clad layer through the opening; and a p-side electrode on the p-contact layer. - View Dependent Claims (12)
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13. A semiconductor device comprising:
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a semiconductor substrate of a first conductive type; a first clad layer of the first conductive type on the semiconductor substrate; an active layer of one of II-VI compound semiconductors and N-containing III-V compound semiconductors on the first clad layer; a second clad layer of a second conductive type on the active layer; a current blocking layer of the first conductive type on the active layer; a current blocking layer on the first conductive type on the second clad layer and having an opening; a contact layer of a semiconductor material of the second conductive type on the current blocking layer and contacting the second clad layer through the opening of the current blocking layer; a first electrode in contact with the contact layer; and a second electrode in contact with the semiconductor substrate. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification