Magnetoresistance effect element sensor and an electronic circuit therefor

• US 5,585,719 A
• Filed: 03/04/1994
• Issued: 12/17/1996
• Est. Priority Date: 03/11/1993
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Shimizu, Nobuyoshi, Kajitani, Hiroshi, Tanji, Shigeo, Kurashima, Shigemi, Endo, Michiko, Kawamoto, Mieko
• Primary Examiner(s): Strecker, Gerard R.
• Application Number:
  US08/205,378
• Time in Patent Office: 1,019 Days
• Field of Search: 324/173, 324/174, 324/207.12, 324/207.21, 324/207.24, 324/207.25, 324/235, 324/251, 324/252, 324/207.2, 235/449, 338/32 R, 327/510
• US Class Current: 324/235
• CPC Class Codes: G01D 5/142 using Hall-effect devices measuring magnetic variables using Hall-effect or other galvanomagnetic devices G01R33/06
• CPC Class Codes: G01P 3/486 delivered by photo-electric detectors

Abstract

A magnetic sensor including a magnetoresistance effect element directed to prevent deterioration in the detection sensitivity occurring due to inversion of the magnetization of a plurality of ferromagnetic thin film stripes forming the magnetoresistance effect element with respect to the initial direction during the repeated operations, the magnetic sensor being arranged in such a manner that the magnetoresistance effect element is disposed at a position deviating from the center of the magnetic pole surface of a cylindrical magnet, preferably at a position deviating in a direction perpendicular to a direction in which the magnetic object to be detected is moved. The thus-employed arrangement enables a bias magnetic field to be applied to the magnetoresistance effect element in parallel to the deviation direction. Therefore, the magnetization of all of the plurality of the ferromagnetic thin film stripes forming the magnetoresistance effect element can be caused to face the same direction. As a result, the detection sensitivity can be stabilized because inversion of the magnetization can be prevented even if external magnetic fields are repeatedly applied.

Claims

1. A magnetic sensor, comprising:

a magnet having a magnetic pole surface, said surface having a center and facing an object to be detected;

a magnetoresistance effect element comprising a plurality of stripes, each stripe comprising a ferromagnetic thin film which is parallel to, and spaced apart from, said magnet surface and extends in a first direction, said plurality of said ferromagnetic thin film stripes being arranged in four groups, each group comprising a respective plurality of said ferromagnetic thin film stripes extending in the first direction and connected in series at corresponding terminals through respective ends thereof and said four groups being connected through said corresponding terminals so as to form a bridge circuit;

a plurality of second stripes disposed on each of said ferromagnetic thin film stripes, each of said second stripes comprising a conductor thin film and extending in a direction at an angle of approximately 45°

relatively to the first direction in which said ferromagnetic thin film stripes extend; and

said magnetoresistance effect element being disposed so as to deviate from the center of said magnet surface in the first direction, the first direction being perpendicular to a second direction in which said object moves relatively to the magnetic pole surface of the magnet.

2. A magnetic sensor as set forth in claim 1, wherein respective said second stripes, in any two of said groups which are adjacent to each other in said bridge circuit, extend perpendicularly to each other.

3. A magnetic sensor as set forth in claim 1, wherein:

respective said second stripes, in any two of said groups adjacent to each other in a direction perpendicular to the first direction, extend in parallel with respect to each other; and

respective said second stripes, in any two of said groups adjacent to each other in a direction parallel to the first direction, extend perpendicularly to each other.

4. A magnetic sensor as set forth in claim 1, wherein respective said ferromagnetic thin film stripes of two of said groups, which are deviated farther from the center of said magnet surface than the other two of said groups, have a width which is greater than the width of the respective said ferromagnetic thin film stripes of said other two groups.

5. A magnetic sensor as set forth in claim 1, wherein respective said ferromagnetic thin film stripes of two said groups, which are deviated farther from the center of said magnet surface than the other two of said groups, have a thickness which is smaller than the thickness of the ferromagnetic thin film stripes of said other two groups.

6. A magnetic sensor as set forth in claim 1, wherein a plurality of said magnetoresistance effect elements is disposed at a plurality of positions on said magnet surface, one each in the first direction.

7. A magnetic sensor as set forth in claim 6, wherein a region, for a semiconductor integrated circuit for processing signals output from each of said magnetoresistance effect elements, is defined at the center of said magnet surface.

8. A magnetic sensor as set forth in claim 7, further comprising a silicon substrate covered with an insulating layer and disposed on said magnet surface, wherein said magnetoresistance effect element is formed on said insulating layer and said semiconductor integrated circuit is formed in a region of said silicon substrate, said region corresponding to the center of said magnet surface.

9. A magnetic sensor as set forth in claim 6, wherein said object comprises a pattern formed on a surface of a carrier member undergoing linear motion or a rotary motion, the surface of said carrier member having a portion facing said magnet surface, and said object being moved by the motion of said carrier member.

10. A magnetic sensor as set forth in claim 1, wherein:

every two adjacent groups, as connected in the bridge circuit, are connected at a common, respective said terminal and the corresponding, said serially connected stripes of each group are connected at opposite ends thereof to respective said common terminals.

11. A magnetic sensor as set forth in claim 10, wherein:

the four groups comprise first, second, third and fourth groups respectively comprising first, second, third and fourth pluralities of corresponding first, second, third and fourth ferromagnetic thin film stripes; and

said first plurality is spaced from said second plurality in said second direction, said third plurality is spaced from said fourth plurality in said second direction, said first plurality is spaced from said third plurality in said first direction with the corresponding first and third ferromagnetic thin film stripes thereof in aligned relationship and said second plurality is spaced from said fourth plurality in said first direction with said corresponding second and fourth ferromagnetic thin film stripes thereof in aligned relationship.

12. A magnetic sensor as set forth in claim 10, wherein:

the four groups comprise first, second, third and fourth groups respectively comprising first, second, third and fourth pluralities of corresponding first, second, third and fourth ferromagnetic thin film stripes; and

said corresponding first and second ferromagnetic thin film stripes of said first and second pluralities thereof are disposed in interdigitized relationship with each first ferromagnetic thin film stripe adjacent to a corresponding second ferromagnetic thin film stripe and spaced therefrom in the second direction;

said corresponding third and fourth ferromagnetic thin film stripes of said third and fourth pluralities thereof are disposed in interdigitized relationship with each third ferromagnetic thin film stripe adjacent to a corresponding fourth ferromagnetic thin film stripe and spaced therefrom in the second direction; and

corresponding first and third thin film stripes of said first and third pluralities thereof are aligned in the first direction and corresponding second and fourth thin film stripes of said second and fourth pluralities thereof are aligned in the first direction.

13. A magnetic sensor for detecting an object made of a soft magnetic material, comprising:

a magnet having a magnetic pole surface, said surface having a center and facing an object;

a magnetoresistance effect element including four groups, each group comprising a plurality of ferromagnetic thin film stripes extending in a first direction, perpendicular to a second direction of movement of the object and in parallel with respect to said magnet surface with a space therebetween and, further, extending in parallel, spaced relationship with respect to the ferromagnetic thin film stripes of each other group, said plurality of stripes in each group being connected in series through respective ends thereof and said four groups being connected so as to form a bridge circuit through terminals of respective serially connected said stripes thereof, said four groups being respectively disposed at four positions which deviate from the center of said magnet surface along said magnet surface symmetrically with respect to the center of said magnet surface; and

a plurality of second stripes, each second stripe being made of a conductor thin film and formed on a respective one of said ferromagnetic thin film stripes, said second stripes extending in a direction at an angle of approximately 45°

with respect to the first direction in which said respective ferromagnetic thin film stripes extend.

14. A magnetic sensor as set forth in claim 13, wherein two pairs, each pair comprising two said groups adjacent to each other in said bridge circuit, are respectively disposed on two straight lines perpendicular to the direction in which said object moves.

15. A magnetic sensor as set forth in claim 13, wherein a region, for a semiconductor integrated circuit for processing signals output from said magnetoresistance effect element, is defined at the center of said magnet surface.

16. A magnetic sensor as set forth in claim 15, further comprising a silicon substrate covered with an insulating layer and disposed on said magnet surface, wherein said magnetoresistance effect element is formed on said insulating layer and said semiconductor integrated circuit is formed in a region of said silicon substrate, said region corresponding to the center of said magnet surface.