Infrared radiation sensor

• US 5,589,688 A
• Filed: 11/29/1995
• Issued: 12/31/1996
• Est. Priority Date: 11/30/1994
• Status: Expired due to Term

• Current Assignee: Mitsuteru Kimura, Terumo Kabushiki Kaisha
• Original Assignee: Mitsuteru Kimura, Terumo Kabushiki Kaisha
• Inventors: Kimura, Mitsuteru, Kudo, Takeshi
• Primary Examiner(s): Fields, Carolyn E.
• Assistant Examiner(s): Glick, Edward J.
• Application Number:
  US08/564,428
• Time in Patent Office: 398 Days
• Field of Search: 250/338.4, 250/370.14, 374/121
• US Class Current: 250/338.4
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing the temperature characteristics of the saturated current flowing in the reverse direction through a Schottky junction diode. The infrared radiation sensor comprises an n type single crystal area 2 formed in the shape of a thin film by doping a sensor substrate 8 made of p type semiconductor with an n type impurity through the surface of the sensor substrate, a temperature sensor element 1 formed in the n type single crystal area 2, a hollow part 6 formed by removing by electrochemically etching the p type semiconductor from the substantially lower and peripheral parts of the n type single crystal area 2, and a thermally and electrically insulating thin film bridge structure having the n type single crystal area 2 in the shape of a thin film provided with the temperature sensor element 1 carried thereon.

Claims

1. A heat sensitive infrared radiation sensor comprising an n type single crystal area formed in the shape of a thin film by doping a sensor substrate made of p type semiconductor with an n type impurity through the surface of said sensor substrate, a temperature sensor element formed in said n type single crystal area, a hollow part formed by removing by etching said p type semiconductor from the substantially lower and peripheral parts of said n type single crystal area as to leave said n type single crystal area of the sensor substrate, and a thermally and electrically insulating thin film bridge structure part having said n type single crystal area in the shape of a thin film provided with said temperature sensor element carried thereon, said bridge structure part formed over said hollow part and including a light receiving part.

2. An infrared radiation sensor according to claim 1, wherein said temperature sensor element is formed as a Schottky barrier thermistor.

3. An infrared radiation sensor according to claim 1, wherein said n type single crystal area has a film thickness in the range of 0.05 to 15 μ

m.

4. An infrared radiation sensor according to claim 1, wherein said bridge structure part has a width in the range of 3 to 30 μ

m and a thickness in the range of 2 to 5 μ

m.

5. An infrared radiation sensor according to claim 1, wherein said bridge structure part comprises four arms.

6. An infrared radiation sensor according to claim 1, wherein the ratio L:

D is in the range of 1;

0.1 to 1;

0.9, providing that D stands for the diameter (mm) of said light receiving part and L for the overall length (mm) of said bridge structure part.