Switched capacitor analog circuits using polysilicon thin film technology

• US 5,589,847 A
• Filed: 09/23/1991
• Issued: 12/31/1996
• Est. Priority Date: 09/23/1991
• Status: Expired due to Term

• Current Assignee: Thomson Licensing (Vantiva SA)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Lewis, Alan G.
• Primary Examiner(s): Weldon, Ulysses
• Application Number:
  US07/764,292
• Time in Patent Office: 1,926 Days
• Field of Search: 257/310, 437/20, 437/57, 437/919, 340/718, 340/784, 345/98, 345/100, 345/87, 345/92
• US Class Current: 345/98
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H03H 19/004 Switched capacitor networks
• CPC Class Codes: H03M 1/804 with charge redistribution

Abstract

Switched capacitor analog circuits (such as integrators, amplifiers and digital-to-analog converters) constructed from polysilicon thin film transistors and capacitors are disclosed. The circuits are commonly implemented using conventional single crystal CMOS technologies, but this is the first time they have been realized using polysilicon TFT CMOS. The performance of the circuits is inevitably worse than that of conventional single crystal CMOS devices, but is nevertheless adequate for many large area applications. The circuits can be fabricated on large area substrates and integrated with, for example, flat panel displays, pagewidth optical scan arrays, or pagewidth printheads, offering improvements in the functionality and performance of those devices. Charge redistribution amplifiers and digital-to-analog converters are shown to operate with settling times ranging from a few microseconds to a few tens of microseconds, even with large capacitive loads, despite the relatively poor performance of polysilicon TFTs in comparison to conventional MOSFETS. Better than 8-bit accuracy is also demonstrated for the digital-to-analog converters.

Claims

1. An analog switched capacitor circuit comprising:

at least one polysilicon thin film capacitor means;

at least one polysilicon thin film transistor switch means;

at least one polysilicon thin film amplifier means; and

interconnection means for interconnecting the capacitor means, the transistor switch means, and the amplifier means so that the output of said circuit is set by the accumulation of electrical charge on said capacitor means under the control of said transistor switch means and said amplifier means;

said capacitor means, said transistor switch means, said amplifier means, and said interconnection means all being formed on a common substrate.

2. The analog circuit of claim 1, wherein at least two said capacitor means are provided, and interconnected to said transistor switch means and said amplifier means by said interconnection means so that the output of said circuit is set by the accumulation and redistribution of charge among said capacitor means under the control of said transistor switch means and said amplifier means.

3. The analog circuit of claim 2, wherein an array of circuit elements driven by said analog circuit is integrally formed on said substrate.

4. The analog circuit of claim 3, wherein said array of circuit elements is a matrix of display devices, each of said display devices having a data line;

and said analog circuit comprises;

a plurality of analog switched capacitor subcircuits having at least one of said capacitor means, at least one of said transistor means, and at least one of said amplifier means, all being formed on said substrate, each of said subcircuits being operatively coupled to at least one of said data lines; and

the transistor switch means for each of said subcircuits being separately controlled.

5. The circuit of claim 4, wherein each of said subcircuits is operatively coupled to a plurality of data lines, and said analog circuit further comprises multiplexing means connected between each of said subcircuits and its corresponding data lines, for selectively connecting each subcircuit to its corresponding data lines.

6. The analog circuit of claim 3, wherein said array of circuit elements comprises a plurality of switch controlled display elements connected to respective data lines, and said analog switched capacitor circuit is operatively coupled to at least one of said data lines.

7. The analog circuit of claim 6, wherein said analog circuit comprises a plurality of separate control circuits having at least one polysilicon thin film capacitor means, at least one polysilicon thin film transistor switch means, and at least one polysilicon thin film amplifier means electrically connected with at least one of said data lines, said transistor switch means of each of said separate control circuits being controlled by a separate control signal.

8. The analog circuit of claim 7, wherein each of said separate control circuits is operatively coupled to a plurality of different data lines, and said analog circuit further comprises multiplexing means connected between each of said control circuits and its corresponding data lines, for selectively connecting each control circuit to its corresponding data lines.

9. The analog circuit of claim 7, wherein each of said separate control circuits comprises a digital-to-analog converter.

10. The analog circuit of claim 7, wherein each of said separate control circuits comprises sample-and-hold means.

11. The analog circuit of claim 2, wherein said capacitor means, said transistor switch means, and said amplifier means are configured as a digital-to-analog converter.

12. The analog circuit of claim 2, wherein said capacitor means, said transistor switch means, and said amplifier means are configured as a sampling amplifier means.

13. The analog circuit of claim 3, wherein said circuit elements are printing elements.

14. An analog switched capacitor circuit comprising:

an amplifier constructed from polysilicon thin film transistors and having an input and an output;

a polysilicon thin film input capacitor having an output attached to said amplifier input;

a first polysilicon thin film transistor attached to an input of said input capacitor, for selectively attaching said input capacitor to an input voltage source based upon a first control signal;

a second polysilicon thin film transistor attached to said input of said input capacitor, for selectively attaching said input capacitor to ground based upon a second control signal;

a polysilicon thin film feedback capacitor attached between said output and said input of said amplifier;

a third thin film polysilicon transistor attached between said output and said input of said amplifier, for selectively discharging said feedback capacitor based upon one of said first and second control signals;

wherein a capacitance of said input and said feedback capacitors is chosen, and said first, second and third transistors are controlled so that the output of said circuit is set by the transfer and distribution of charge among said input and feedback capacitors under the control of said first, second and third transistors; and

said amplifier, said input and feedback capacitors, and said first, second and third transistors all being formed on a common substrate.

15. The analog circuit of claim 14, further comprising:

a fourth polysilicon thin film transistor attached between said input and said output of said amplifier, for selectively discharging said feedback capacitor in conjunction with said third transistor, based on an opposite one of said first and second control signals.

16. The analog circuit of claim 15, wherein said amplifier includes a plurality of transistors having gates attached to different voltage sources.

17. The analog circuit of claim 15, wherein said amplifier is a two stage amplifier including a compensating polysilicon thin film capacitor.

18. The analog circuit of claim 15, further comprising:

a plurality of said input capacitors, each having a different capacitance and a respective first and second thin film transistor, each of said first transistors being attachable to a common reference voltage source and being controlled by a different bit of a multi-bit digital input, so that each respective input capacitor is charged by the reference voltage based on its bit input, whereby said analog circuit is a digital-to-analog converter.

19. The analog circuit of claim 14, wherein an array of circuit elements driven by said analog circuit is integrally formed on said substrate.

20. The analog circuit of claim 14, wherein said array of circuit elements comprises a plurality of switch controlled display elements connected to respective data lines, and said analog switched capacitor circuit is operatively coupled to at least one of said data lines.

21. A method of fabricating an analog switched capacitor circuit comprising:

a) forming at least one polysilicon thin film capacitor means on a substrate;

b) forming at least one polysilicon thin film transistor switch means on said substrate;

c) forming at least one polysilicon thin film amplifier means on said substrate; and

d) forming polysilicon thin film interconnection means on said substrate, said interconnection means for interconnecting said capacitor means, said transistor switch means, and said amplifier means so that the output of said circuit is set by the accumulation of charge on said at least one capacitor means under the control of said transistor switch means, wherein said capacitor means, said transistor switch means, and said amplifier means are formed during the same polysilicon deposition process.

22. The method of claim 21, wherein at least two said polysilicon thin film capacitor means are formed on said substrate, and are interconnected to said transistor switch means and said amplifier means by said interconnection means so that the output of said circuit is set by the transfer and distribution of charge among said capacitor means under the control of said transistor switch means and said amplifier means.

23. The method of claim 22, further comprising:

forming at least one polysilicon circuit element on said substrate during said deposition process, said circuit element being operatively attached to said analog switched capacitor circuit.

24. The method of claim 23, wherein said at least one circuit element is a liquid crystal display element.

25. The method of claim 23, wherein said circuit element is a printing element.

26. The method of claim 22, wherein said analog circuit is configured as a digital-to-analog converter.

27. The method of claim 22, wherein said analog circuit is configured as a sampling amplifier.