Stacked multistage Joule-Thomson cryostat

• US 5,590,538 A
• Filed: 11/16/1995
• Issued: 01/07/1997
• Est. Priority Date: 11/16/1995
• Status: Expired due to Term

• Current Assignee: Lockheed Martin Corporation (Martin Marietta Corporation)
• Original Assignee: Lockheed Martin Space Operations Company (Martin Marietta Corporation)
• Inventors: Ambrose, Jay H., Hsu, Ike C.
• Primary Examiner(s): Capossela, Ronald C.
• Application Number:
  US08/558,875
• Time in Patent Office: 418 Days
• Field of Search: 62/51.2, 62/51.1
• US Class Current: 62/51.2
• CPC Class Codes: F25B 2500/01 Geometry problems, e.g. for reducing size
• CPC Class Codes: F25B 9/02 using Joule-Thompson effect; using vortex effect
• CPC Class Codes: F25B 9/10 with several cooling stages
• CPC Class Codes: F28F 7/02 Blocks traversed by passages for heat-exchange media F28D7/0008 takes precedence
• CPC Class Codes: G01J 5/061 by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats

Abstract

A stacked multistage Joule-Thomson (J-T) cryostat is described in which each stage comprises a thermally conducting material plate member with fluid passages formed therein and in which the stages are stacked one above the other but separated from each other by thermally insulating standoff supports. Each successive stage in the stack is cooled to successively lower temperature zones by J-T expansion and liquefaction of different coolant gases. Each stage has a restricting passageway connected to a different high pressure gas coolant supply and forming a throttle valve opening into two-phase (liquid-vapor) coolant reservoir passages. The reservoir passages in all but the coldest stage are in heat exchange relation with the high pressure supply passages of the lower boiling temperature coolant gases. The coldest stage is in heat exchange relation with a cold surface on which a device to be cooled can be mounted. Because the stages are constructed of thermally conductive material, there is substantially no thermal gradient within a given stage, and because the stages are thermally isolated from each other, substantial parasitic loads by the heat exchanger section on the cold reservoir for a given coolant is avoided.

Claims

1. A stacked multistage Joule-Thomson cryostat, comprising:

a plurality of supplies of different highly pressurized gas coolants with different boiling temperatures at ambient pressure, said supplies of coolants including a primary coolant with a lowest boiling temperature and at least one secondary coolant with an inversion temperature that is above ambient temperature,

a plurality of stages stacked one above the other in thermal isolation from each other, each stage including a thermally conductive material plate member with fluid passages formed therein, the fluid passages in each stage including two-phase reservoir passages associated with a different coolant from reservoir passages in the other stages and a restricting passageway in fluid communication with the high pressure gas supply of that associated coolant, said restricting passageway forming a Joule-Thomson throttle valve opening into said reservoir passages for isenthalpic expansion and liquefaction of the associated coolant, said reservoir passages of a coldest stage associated with said primary coolant being in heat exchange relation with a cold surface of that coldest stage, said cold surface adapted for mounting a device to be cooled thereto in thermal contact therewith, each stage other than said coldest stage also having high pressure coolant supply passages in heat exchange relation with said reservoir passages of that stage for precooling each gas coolant with a lower boiling temperature than the coolant associated with that stage.

2. The cryostat of claim 1 wherein said plate member of each stage comprises at least one thin, generally planar, wafer substrate of thermally conductive material with said fluid passages comprising channels formed in at least one surface of said wafer substrate, and at least one cover plate bonded in pressure-tight sealed contact with said at least one surface of said wafer substrate.

3. The cryostat of claim 2 wherein said thermally conductive material comprises silicon.

4. The cryostat of claim 2 wherein said channels are photolithographically etched into said surface of said wafer substrate.

5. The cryostat of claim 2 wherein said flow restricting passageways forming said throttle valves of each stage comprise channels of smaller cross-sectional area than the reservoir passageways of that stage.

6. The cryostat of claim 2 wherein thermally insulating standoff supports separate said stages.

7. The cryostat of claim 1 wherein said gas coolants are selected from the group consisting of hydrogen, neon, nitrogen, argon, krypton, ethane, CHF₃, CF₄ and ammonia.

8. A stacked two-stage Joule-Thomson cryostat, comprising:

a supply of high pressure, primary coolant gas,

a supply of high pressure, secondary coolant gas, said secondary coolant gas characterized by an inversion temperature that is above ambient temperature and by a boiling temperature at ambient pressure that is less than an inversion temperature of said primary coolant gas,

a first stage including a thermally conductive material plate member with fluid passages formed therein, said fluid passages including a high pressure primary coolant supply path with an inlet connected to said supply of high pressure primary coolant gas and with an outlet, a low pressure primary coolant return path with an inlet and an outlet, and a secondary coolant path with an inlet connected to said supply of high pressure secondary coolant gas and with an outlet, said secondary coolant path including a flow restricting passageway forming a throttle valve opening into a secondary coolant reservoir in heat exchange relation with said high pressure primary coolant supply path, and

a second stage, thermally isolated from said first stage and stacked above said first stage, including a thermally conductive material plate member with fluid passages formed there, said fluid passages including a primary coolant path with an inlet connected to said outlet of said high pressure primary coolant supply path of said first stage and with an outlet connected to said inlet of said low pressure primary coolant return path of said first stage, said primary coolant path in said second stage including a flow restricting passageway forming a throttle valve for said primary coolant gas opening into a primary coolant reservoir in heat exchange relation with a cold surface of said second stage, said cold surface adapted for mounting a device to be cooled thereto in thermal contact with said cold surface.

9. The cryostat of claim 8 wherein said primary coolant reservoir comprises a plurality of parallel flow passages substantially co-extensive with said cold surface and connected between said flow restricting passageway for said primary coolant and said outlet of said primary coolant path in said second stage.

10. The cryostat of claim 8 wherein said secondary coolant reservoir comprises a plurality of parallel flow passages in thermal communication with said high pressure primary coolant supply path and connected between said flow restricting passageway for said secondary coolant and said outlet of said secondary coolant path in said first stage.

11. The cryostat of claim 10 wherein said plurality of parallel flow passages are common to both said secondary coolant path and said low pressure primary coolant return path, said parallel flow passages also being connected between said inlet of said low pressure primary coolant return path and said outlet of said low pressure primary coolant return path, said low pressure primary coolant return path and said secondary coolant path having a common outlet.

12. The cryostat of claim 8 wherein each plate member of said first and second stages comprises at least one thin, generally planar, wafer substrate of thermally conductive material, said fluid passages formed in said plate members comprising channels formed in at least one surface of said wafer substrate of each stage, each plate member also comprising at least one cover plate bonded in pressure-tight sealed contact with said at least one interface of said wafer substrate.

13. The cryostat of claim 12 wherein said thermally conductive material comprises silicon.

14. The cryostat of claim 12 wherein said channels are photolithographically etched into said surface of said wafer substrate.

15. The cryostat of claim 8 wherein each said flow restricting passageway comprises a channel of smaller cross-sectional area than the passages of said coolant reservoir into which said flow restricting passageway opens.

16. The cryostat of claim 8 wherein thermally insulating standoff supports separate said first and second stages.

17. The cryostat of claim 8 wherein said primary coolant gas is selected from the group consisting of argon and nitrogen.

18. The cryostat of claim 8 wherein said secondary coolant gas is selected from CHF₃, ethane and krypton.

19. A stacked three-stage Joule-Thomson cryostat, comprising:

a supply of high pressure, primary coolant gas,

a supply of high pressure, secondary coolant gas, said secondary coolant gas characterized by a boiling temperature at ambient pressure that is less than an inversion temperature of said primary coolant gas,

a supply of high pressure, auxiliary coolant gas, said auxiliary coolant gas characterized by an inversion temperature that is above ambient temperature and by a boiling temperature at ambient pressure that is less than an inversion temperature of said secondary coolant gas,

a first stage including a thermally conductive plate member with fluid passages formed therein, said fluid passages including a first high pressure primary coolant supply path with an inlet connected to said supply of high pressure primary coolant gas and with an outlet, a high-pressure secondary coolant supply path with an inlet connected to said supply of high pressure secondary coolant gas and with an outlet, a low pressure secondary coolant return path with an inlet and an outlet, and an auxiliary coolant path with an inlet connected to said supply of high pressure auxiliary coolant gas and with an outlet, said auxiliary coolant path including a flow restricting passageway forming a throttle valve for said auxiliary coolant gas opening into an auxiliary coolant reservoir in heat exchange relation with said high pressure, primary and secondary, coolant supply paths,

a second stage, thermally isolated from said first stage and stacked above said first stage, including a thermally conductive material plate member with fluid passages formed therein, said fluid passages including a second high pressure primary coolant supply path with an inlet connected to said outlet of said first high pressure primary coolant supply path of said firs stage and with an outlet, a secondary coolant path with an inlet connected to said outlet of said high pressure secondary coolant supply path of said first stage and with an outlet connected to said inlet, said low pressure secondary coolant return path of said first stage, and a low pressure primary coolant return path with an inlet and an outlet, said secondary coolant path in said second stage including a flow restricting passageway forming a throttle valve for said secondary coolant gas opening into a secondary coolant reservoir in heat exchange relation with said second high pressure primary coolant supply path of said second stage, and

a third stage, thermally isolated from said second stage and stacked above said second stage, including a thermally conductive material plate member with fluid passages formed therein, said fluid passages including a primary coolant path with an inlet connected to said outlet of said second high pressure primary coolant supply path of said second stage and with an outlet connected to said inlet of said low pressure primary coolant return path of said second stage, said primary coolant path in said third stage including a flow restricting passageway forming a throttle valve for said primary coolant gas opening into a primary coolant reservoir in heat exchange relation with a cold surface of said third stage, said cold surface adapted for mounting a device to be cooled thereto in thermal contact with said cold surface.

20. The cryostat of claim 19 wherein each of said primary, secondary and auxiliary coolant reservoirs comprises a plurality of parallel flow passages in said respective first, second and third stages.

21. The cryostat of claim 19 wherein each plate member of said first, second and third stages comprises at least one thin, generally planar, wafer substrate of thermally conductive material, said fluid passages formed in said respective plate members comprising channels formed in at least one surface of said wafer substrate of each stage, each plate member also comprising at least one cover plate bonded in pressure-tight sealed contact with said at least one surface of said wafer substrate.

22. The cryostat of claim 21 wherein said thermally conductive material comprises silicon.

23. The cryostat of claim 21 wherein said channels are photolithographically etched into said surface of said wafer substrate.

24. The cryostat of claim 19 wherein said flow restricting passageway of each stage comprises a channel of smaller cross-sectional area than flow passages of said coolant reservoir into which said flow restricting passageway opens.

25. The cryostat of claim 19 wherein thermally insulating standoff supports separate said first, second and third stages.

26. The cryostat of claim 19 wherein said primary coolant gas is selected from the group consisting of neon and hydrogen.

27. The cryostat of claim 19 wherein said secondary coolant gas is selected from the group consisting of argon and nitrogen.

28. The cryostat of claim 19 wherein said auxiliary coolant gas is selected from the group consisting of CHF₃, ethane and krypton.