Low-strain laser structures with group III nitride active layers

• US 5,592,501 A
• Filed: 09/20/1994
• Issued: 01/07/1997
• Est. Priority Date: 09/20/1994
• Status: Expired due to Term

• Current Assignee: CREE Incorporated (Wolfspeed, Inc.)
• Original Assignee: Cree Research, Inc.
• Inventors: Kong, Hua-Shuang, Edmond, John A., Bulman, Gary E.
• Primary Examiner(s): Davie, James W.
• Application Number:
  US08/309,247
• Time in Patent Office: 840 Days
• Field of Search: 372/45, 372/46, 372/44, 257/77
• US Class Current: 372/45.011
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/3226 SiC
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP
• CPC Class Codes: H01S 5/343 in AIIIBV compounds, e.g. AlGaAs-laser , InP-based laser
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.

Claims

1. A separate-confinement heterostructure laser comprising:

an indium gallium nitride active layer;

upper and lower waveguide layers on said active layer formed from the group consisting of AlGaN, InGaN, and AlInGaN; and

upper and lower cladding layers on said respective upper and lower waveguide layers and formed of AlGaN.

2. A laser according to claim 1 and further comprising a strain minimizing AlGaN contact layer on said upper cladding layer.

3. A laser according to claim 1 wherein said waveguide layers have the formula Al_x Ga_1-x N, and where x is 0, 1, or a fraction between 0 and 1.

4. A laser according to claim 1 wherein said waveguide layers have the formula Al_x Ga_y IN_1-x-y N, and where x and y are 0, 1, or a fraction between 0 and 1 and where 1 is greater than (x+y).

5. A laser according to claim 1 wherein said waveguide layers have a bandgap larger than said active layer.

6. A laser according to claim 1 wherein said waveguide layers have a refractive index smaller than said active layer.

7. A laser according to claim 3 wherein said cladding layers have the formula Al_y Ga_1-y N wherein y is greater than x, and where y is 0, 1, or a fraction between 0 and 1.

8. A laser according to claim 1 wherein said cladding layers have a bandgap larger than said waveguide layers.

9. A laser according to claim 1 wherein said cladding layers have a refractive index smaller than said waveguide layers.

10. A laser according to claim 7 and further comprising a strain minimizing AlGaN contact layer on said upper cladding layer, and wherein said strain minimizing contact layer has the formula Al_w Ga_1-w N wherein w is greater than x and less than y, and where w is 0, 1, or a fraction between 0 and 1.

11. A laser according to claim 1 wherein:

said upper waveguide and upper cladding layers have the same conductivity type;

said lower waveguide and lower cladding layers have the same conductivity type and that is opposite to the conductivity type of said upper layers.

12. A laser according to claim 11 wherein said upper layers are p-type and said lower layers are n-type.

13. A laser according to claim 12 and further comprising a strain minimizing AlGaN contact layer on said upper cladding layer, and wherein said strain minimizing contact layer is p-type.

14. A laser according to claim 1 wherein each of said waveguide and cladding layers has a thickness sufficient to substantially accommodate the strain between it and its adjacent layers, but less than the thickness at which misfit dislocations begin to form.

15. A laser according to claim 1 and further comprising:

a silicon carbide substrate; and

a buffer layer formed of one or more layers having a composition selected from the group consisting of GaN, AlN, InN, and Al_x Ga_1-x N, and where x is zero, one, or a fraction between zero and one.

16. A laser according to claim 15 and further comprising a strain minimizing AlGaN contact layer on said upper cladding layer, and wherein said strain-minimizing contact layer has a lattice constant that matches said buffer layer.

17. A laser according to claim 15 and further comprising a strain minimizing AlGaN contact layer on said upper cladding layer, and wherein the lattice constant of said buffer layer is substantially the average of the lattice constants of said active layer, said waveguide layers, said cladding layers and said strain-minimizing contact layer.

18. A laser structure according to claim 1 wherein said active, waveguide, cladding, and contact layers have the composition and thicknesses set forth in Table I.

19. A laser structure according to claim 1 wherein said active, waveguide, cladding, and contact layers have the composition and thicknesses set forth in Table IIa.

20. A laser structure according to claim 1 wherein said active, waveguide, cladding, and contact layers have the composition and thicknesses set forth in Table IIb.

21. A laser structure according to claim 1 wherein said active, waveguide, cladding, and contact layers have the composition and thicknesses set forth in Table III.

22. A separate-confinement heterostructure laser comprising:

an aluminum indium gallium nitride active layer;

upper and lower waveguide layers on said active layer formed from the group consisting of AlGaN, InGaN, and AlInGaN; and

upper and lower cladding layers on said respective upper and lower waveguide layers and formed of AlGaN.

23. A laser structure according to claim 22 wherein said active layer has the composition Al_x Ga_y In_1-x-y N, and where x and y are 0, 1, or a fraction between 0 and 1 and where 1 is greater than (x+y).

24. A group III nitride laser structure comprising:

an active layer that includes at least one layer of a Group III nitride;

a silicon carbide substrate; and

a coupling structure between said active layer and said substrate, said coupling layer including at least one graded layer of silicon carbide and a group III nitride in which the graded layer is silicon carbide at the interface with said substrate, and the graded layer is the group III nitride at the interface with said active layer.

25. A laser according to claim 24 wherein said Group III nitride in said active layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_y C_1-x-y N, where A, B and C are Group III elements and where x and y are zero, one, or a fraction between zero and one and 1 is greater than (x+y), and alloys of silicon carbide with such ternary Group III nitrides.

26. A laser according to claim 25 and further comprising a strain-minimizing layer above said active layer, said strain-minimizing layer having a lattice constant that is substantially the same as the lattice constant of said coupling structure.

27. A laser according to claim 24 wherein said active layer further comprises:

respective upper and lower waveguide layers adjacent both surfaces of said active layer;

an upper cladding layer on said upper waveguide layer; and

a lower cladding layer below said lower waveguide layer.

28. A laser according to claim 27 wherein said waveguide layers have a wider bandgap and a lower refractive index than said active layer;

and

said cladding layers have a wider bandgap and a lower refractive index than said waveguide layers.

29. A laser according to claim 27 wherein said strain minimizing layer is on said upper cladding layer.

30. A laser according to claim 29 wherein said lower cladding layer is on said coupling structure.

31. A group III nitride laser structure comprising:

an active layer that includes at least one layer of a Group III nitride;

a silicon carbide substrate;

a buffer layer between said active layer and said silicon carbide substrate, said buffer layer being selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A_x B_1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides; and

a strain-minimizing contact layer above said active layer that has a lattice constant substantially the same as said buffer layer.

32. A laser structure according to claim 31 wherein said active layer further comprises:

respective upper and lower waveguide layers adjacent both surfaces of said active layer;

an upper cladding layer on said upper waveguide layer; and

a lower cladding layer below said lower waveguide layer.

33. A laser structure according to claim 32 wherein said strain minimizing layer is on said upper cladding layer.

34. A laser structure according to claim 32 wherein said lower cladding layer is on said buffer layer.

35. A laser according to claim 32 wherein said waveguide layers have a wider bandgap and a lower refractive index than said active layer;

and

said cladding layers have a wider bandgap and a lower refractive index than said waveguide layers.