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Method of manufacturing semiconductor device

  • US 5,593,926 A
  • Filed: 10/07/1994
  • Issued: 01/14/1997
  • Est. Priority Date: 10/12/1993
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing a semiconductor device, comprising the steps of:

  • (a) forming first, second, and third wiring layers on a surface of a wafer, wherein said third wiring layer is arranged between said first and said second wiring layers;

    (b) coating surfaces of said first, second, and third wiring layers and a remaining exposed surface of said wafer with a resist;

    (c) partially removing said resist to expose a part of the surfaces of said first and second wiring layers;

    (d) coating said exposed surfaces of said first and second wiring layers, and a surface of said resist, with a fourth wiring layer to connect said first wiring layer to said second wiring layer via said fourth wiring layer;

    (e) removing said resist arranged between said fourth wiring layer and said third wiring layer to form an air gap between said third and fourth wiring layers, thereby forming an air bridge structure;

    (f) forming a chip from said wafer having said air bridge structure, said chip being covered with a protective coat;

    (g) die bonding said chip having said protective coat to a package; and

    (h) removing said protective coat from said chip while keeping said chip fixed on said package.

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