Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section
First Claim
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1. A semiconductor accelerometer, comprising:
- a silicon semiconductor substrate as a frame having a (100) surface;
a weight formed in the substrate and surrounded by the substrate with a gap therebetween;
a silicon cantilevered beam formed in the substrate for connecting the weight to the substrate; and
a strain sensing device formed in a surface portion near a support portion of the cantilevered beam,the silicon cantilevered beam having a triangular cross section defined by one (100) surface and two (111) surfaces.
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Abstract
A semiconductor accelerometer, including a weight and a cantilevered beam formed in a silicon semiconductor substrate as a frame having a (100) surface, and a strain sensing device formed in a surface portion near a support portion of the cantilevered beam, the silicon cantilevered beam having a triangular cross section defined by one (100) surface and two (111) surfaces or a pentagonal cross section defined by one (100) surface, two (110) surfaces and two (111) surfaces. A method for producing the semiconductor accelerometer is also disclosed.
42 Citations
10 Claims
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1. A semiconductor accelerometer, comprising:
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a silicon semiconductor substrate as a frame having a (100) surface; a weight formed in the substrate and surrounded by the substrate with a gap therebetween; a silicon cantilevered beam formed in the substrate for connecting the weight to the substrate; and a strain sensing device formed in a surface portion near a support portion of the cantilevered beam, the silicon cantilevered beam having a triangular cross section defined by one (100) surface and two (111) surfaces. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor accelerometer, comprising:
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a silicon semiconductor substrate as a frame having a (100) surface; a weight formed in the substrate and surrounded by the substrate with a gap therebetween; a silicon cantilevered beam formed in the substrate for connecting the weight to the substrate; and a strain sensing device formed in a surface portion near a support portion of the cantilevered beam, the silicon cantilevered beam having a pentagonal cross section defined by one (100) surface, two (110) surfaces and two (111) surfaces. - View Dependent Claims (7, 8, 9, 10)
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Specification