Apparatus and method for depositing charge on a semiconductor wafer

• US 5,594,247 A
• Filed: 07/07/1995
• Issued: 01/14/1997
• Est. Priority Date: 07/07/1995
• Status: Expired due to Term

• Current Assignee: Keithley Instruments, Inc.
• Original Assignee: Keithley Instruments, Inc.
• Inventors: Miller, Thomas G., Horner, Gregory S., Verkuil, Roger L.
• Primary Examiner(s): Berman, Jack I.
• Application Number:
  US08/499,326
• Time in Patent Office: 557 Days
• Field of Search: 250/326, 250/325, 250/324, 361/229, 355/225
• US Class Current: 250/326
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A conductive screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by first applying a surplus of one charge to the wafer and then depositing an opposite polarity charge until the potential of the wafer equals the potential of the screen.

Claims

1. An apparatus for depositing a desired charge on a surface of a semiconductor wafer, said apparatus comprising:

an ion source;

a conductive screen between said source and said surface, said screen having a plurality of apertures, wherein said apertures flare toward said surface; and

a screen potential control for applying a desired potential to said screen.

2. An apparatus according to claim 1, wherein said ion source includes a needle-shaped electrode for providing ions of a particular polarity from the tip thereof in response to an ionizing potential applied thereto.

3. An apparatus according to claim 1, further comprising means to dither said wafer with respect to said screen.

4. An apparatus according to claim 1, wherein said screen is oriented between 5 and 10 mils from said surface.

5. An apparatus according to claim 1, wherein said apertures flare at least ten percent.

6. An apparatus according to claim 1, wherein said apertures are substantially circulars.

7. An apparatus according to claim 6, wherein said apertures are substantially 9 mils in diameter and substantially 15 mils on centers.

8. A method for depositing a desired charge on a surface of a semiconductor wafer, said method comprising:

providing an ion source;

providing a conductive screen between said source and said surface, said screen having a plurality of apertures, wherein said apertures flare toward said surface;

providing a screen potential control for applying a desired potential to said screen;

depositing a first polarity charge on said wafer to provide a surplus of said first polarity charge;

applying said desired potential to said screen; and

depositing a second polarity charge on said wafer until said wafer has a potential equal to said desired potential.

9. A method according to claim 8, further comprising dithering said wafer with respect to said screen.

10. A method for depositing a desired charge on a surface of a semiconductor wafer, said method comprising:

providing an alternating polarity ion source;

providing a conductive screen between said source and said surface, said screen having a plurality of apertures, wherein said apertures flare toward said surface;

providing a screen potential control for applying a desired potential to said screen;

applying said desired potential to said screen; and

p1 depositing charge on said wafer until said wafer has a potential equal to said desired potential.

11. An apparatus for depositing a desired charge on a surface of a semiconductor wafer, said apparatus comprising:

an ion source;

a conductive screen between said source and said surface, said screen having a plurality of apertures;

a screen potential control for applying a desired potential to said screen;

means to linearly translate said wafer with respect to said apparatus in a linear path to deposit charge on a desired portion of said surface; and

means to dither said wafer with respect to said apparatus about said linear path.

12. An apparatus according to claim 11, wherein said ion source includes a needle-shaped electrode for providing ions of a particular polarity from the tip thereof in response to an ionizing potential applied thereto.

13. An apparatus according to claim 11, wherein said screen is oriented between 5 and 10 mils from said surface.

14. An apparatus according to claim 11, wherein said apertures flare toward said surface.

15. An apparatus according to claim 14, wherein said apertures flare at least ten percent.

16. An apparatus according to claim 11, wherein said apertures are substantially circular.

17. An apparatus according to claim 16, wherein said apertures are substantially 9 mils in diameter and substantially 15 mils on centers.