Plasma etching method

• US 5,595,627 A
• Filed: 02/02/1996
• Issued: 01/21/1997
• Est. Priority Date: 02/07/1995
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Tokyo Electron Limited, Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Inazawa, Koichiro, Matsushita, Takaya, Hayashi, Hisataka, Okamoto, Shin
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): ADJODHA, MICHAEL
• Application Number:
  US08/597,563
• Time in Patent Office: 354 Days
• Field of Search: 156/643.1, 156/626.1, 156/662.1
• US Class Current: 438/715
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A plasma etching apparatus has a lower electrode for supporting a semiconductor wafer in a processing room, an upper electrode opposite to the lower electrode, and an RF power supply for applying an RF power across the upper and lower electrodes. An SiN layer as an underlayer having a shoulder portion, and an SiO₂ layer covering the SiN layer are disposed on the wafer. A contact hole is formed in the SiO₂ layer by etching so as to expose the shoulder portion of the SiN layer. A processing gas contains C₄ F₈ and CO. To set the etching selection ratio of SiO₂ /SiN, the discharge duration of each part of the processing gas is used as a parameter. The progress of dissociation of C₄ F₈ is controlled by selecting the discharge duration. The discharge duration is determined by the residence time of each part of the processing gas and the application time of an RF power.

Claims

1. A plasma etching method in which a processing gas is introduced into a processing room housing a substrate, an RF power is applied across opposite electrodes to cause the processing gas to discharge, thereby generating a plasma, and a first layer supported by said substrate is etched by using the plasma in preference to a second layer supported by said substrate and consisting of a material different from that of said first layer,

wherein said first layer consists essentially of SiO₂ while second layer consists essentially of a material selected from a group consisting of SiN, Si, Al, and TiN, the processing gas contains C₄ F₈ and CO, and progress of dissociation of C₄ F₈ is controlled, using a discharge duration of each part of the processing gas as a parameter, in order to set an etching selection ratio of said first layer to said second layer.

2. The method according to claim 1, wherein the discharge duration is selected to have a small value with a large set value of the etching selection ratio so as to suppress the progress of dissociation and increase a C₂ F₄ content.

3. The method according to claim 2, wherein said second layer has a shoulder portion while said first layer is arranged on said second layer so as to cover said shoulder portion, and said first layer is etched to form a hole through which said shoulder portion of said second layer is exposed.

4. The method according to claim 2, wherein the RF power is continuously applied, and the discharge duration is defined as a residence time of each part of the processing gas in said processing room.

5. The method according to claim 2, wherein an RF power is applied in pulsation, and the discharge duration is defined as a sum of pulse widths within a residence time of each part of the processing gas in said processing room.

6. The method according to claim 2, wherein said substrate is heated to not less than 120°

C. during the etching.

7. A plasma etching method in which a processing gas is introduced into a processing room housing a substrate, an RF power is applied across opposite electrodes to cause the processing gas to discharge, thereby generating a plasma, and a first layer supported by said substrate is etched by using the plasma in preference to a second layer supported by said substrate and consisting of a material different from that of said first layer,

wherein said first layer consists essentially of SiO₂ while said second layer consists essentially of a material selected from a group consisting of SiN, Si, Al, TiN, W, WSi, and TiSi, the processing gas contains C₄ F₈ and CO, and a density ratio of C₂ F₄ and CF₃, which are generated upon dissociation of C₄ F₈, is controlled, using a discharge duration of each part of the processing gas as a parameter, in order to set an etching selection ratio of said first layer to said second layer.

8. The method according to claim 7, wherein the discharge duration is selected to have a value so as to set the density ratio of C₂ F₄ /CF₃ to be not less than 1, and to have a small value with a large set value of the etching selection ratio so as to increase the density ratio.

9. The method according to claim 8, wherein said second layer has a shoulder portion while said first layer is arranged on said second layer so as to cover said shoulder portion, and said first layer is etched to form a hole through which said shoulder portion of said second layer is exposed.

10. The method according to claim 8, wherein the RF power is continuously applied, and the discharge duration is defined as a residence time of each part of the processing gas in said processing room.

11. The method according to claim 8, wherein an RF power is applied in pulsation, and the discharge duration is defined as a sum of pulse widths within a residence time of each part of the processing gas in said processing room.

12. The method according to claim 8, wherein said substrate is heated to 80°

C. to 150°

C. during the etching.

13. A plasma etching method using a plasma etching apparatus in which a first layer supported by a substrate is etched in preference to a second layer supported by said substrate and consisting of a material different from that of said first layer,

wherein said apparatus comprises a first electrode for supporting said substrate in a processing room, a second electrode opposite to said first electrode in said processing room, and an RF power supply for applying an RF power across said first and second electrodes, and

wherein said first layer consists essentially of SiO₂ while said second layer consists essentially of a material selected from a group consisting of SiN, Si, Al, TiN, W, WSi, and TiSi, the processing gas contains C₄ F₈ and CO,

said method comprising the steps of:

selecting a value for a discharge duration of each part of a processing gas as a parameter in order to set an etching selection ratio of said first layer to said second layer, a density ratio of C₂ F₄ to CF₃, which are generated upon dissociation of C₄ F₈, being controlled by changing the discharge duration;

setting said plasma etching apparatus in accordance with the selected value of the parameter;

supporting said substrate by said first electrode;

supplying the processing gas into said processing room while exhausting said processing room, the processing gas containing C₄ F₈ and CO;

applying the RF power across said first and second electrodes to convert the processing gas into a plasma; and

processing said first and second layers using the plasma.

14. The method according to claim 13, wherein the discharge duration is selected to have a value so as to set the density ratio of C₂ F₄ /CF₃ to be not less than 1, and to have a small value with a large set value of the etching selection ratio so as to increase the density ratio.

15. The method according to claim 14, wherein said second layer has a shoulder portion while said first layer is arranged on said second layer so as to cover said shoulder portion, and said first layer is etched to form a hole through which said shoulder portion of said second layer is exposed.

16. The method according to claim 14, wherein the RF power is continuously applied, and the discharge duration is defined as a residence time of each part of the processing gas in said processing room.

17. The method according to claim 14, wherein an RF power is applied in pulsation, and the discharge duration is defined as a sum of pulse widths within a residence time of each part of the processing gas in said processing room.

18. The method according to claim 14, wherein said substrate is heated to 80°

C. to 150°

C. during the etching.