Titanium nitride and multilayers formed by chemical vapor deposition of titanium halides

• US 5,595,784 A
• Filed: 08/18/1995
• Issued: 01/21/1997
• Est. Priority Date: 08/01/1995
• Status: Expired due to Term

• Current Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Original Assignee: Novellus Systems Incorporated (Lam Research Corporation)
• Inventors: Kaim, Robert, Vanderpot, John W.
• Primary Examiner(s): King, Roy V.
• Application Number:
  US08/516,790
• Time in Patent Office: 522 Days
• Field of Search: 427/255.2, 427/255.1, 427/253, 427/569, 427/250, 427/255.7, 427/255, 427/419.7
• US Class Current: 427/255.391
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/42 Silicides
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76862 Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation

Abstract

A gaseous mixture of a titanium halide and silane is introduced to a plasma or thermal CVD reactor to induce a reaction such that a conformal and pure titanium film is deposited onto a semiconductor device within the reactor. The titanium halide has a chemical form of TiX₄, where X is a halogen. Other gaseous combinations of the titanium halide, ammonia, hydrogen, a halogen and silane are subjected to plasma or thermal CVD to induce a reaction to deposit titanium silicide and titanium nitride films onto the semiconductor device. Successive CVD processes create bilayers of TiSi_x /TiN or Ti/TiN, and/or trilayers of TiSi_x /Ti/TiN onto the semiconductor device.

Claims

1. A chemical vapor deposition process of depositing a titanium nitride film onto a semiconductor device, comprising the steps of forming a gaseous mixture including titanium halide, silane, a halogen, and ammonia, and transforming the mixture within a chemical vapor deposition reactor to deposit the titanium nitride film onto the semiconductor device, the titanium halide being selected from the group consisting of titanium iodide, titanium bromide and titanium chloride, the halogen being selected from the group consisting of chlorine, iodine and bromine.

2. A chemical vapor deposition process of depositing a titanium nitride film onto a semiconductor device, comprising the steps of forming a gaseous mixture including titanium halide, a halogen, and ammonia, and transforming the mixture within a chemical vapor deposition reactor to deposit the titanium nitride film onto the semiconductor device, the titanium halide being selected from the group consisting of titanium iodide, titanium bromide and titanium chloride, the halogen being selected from the group consisting of chlorine, iodine and bromine.

3. A chemical vapor deposition process of depositing a trilayer of titanium silicide, titanium, and titanium nitride onto a semiconductor device, comprising the steps of (i) forming a first gaseous mixture including titanium halide and a first gas that includes silane, (ii) transforming the first mixture by chemical vapor deposition to deposit the titanium silicide film onto the semiconductor device, (iii) forming a second gaseous mixture including titanium halide and the first gas, (iv) transforming the second mixture by chemical vapor deposition to deposit the titanium film onto the semiconductor device, (v) forming a third gaseous mixture including titanium halide, ammonia, and the first gas, and (vi) transforming the third mixture by chemical vapor deposition to deposit a titanium nitride film onto the semiconductor device, thereby forming a trilayer of titanium silicide, titanium and titanium nitride.

4. A process according to claim 3 wherein the step of inducing a reaction comprises the step of utilizing plasma chemical vapor deposition.

5. A process according to claim 3 wherein the step of inducing a reaction comprises the step of utilizing thermal chemical vapor deposition.

6. A process according to claim 3 wherein the silane is selected from SiH₄, Si₂ H₆ or Si₃ H₈.

7. A process according to claim 3 wherein the titanium halide comprises TiX₄, where X is a halogen selected from the group consisting essentially of chlorine, bromine and iodine.

8. A process according to claim 3 comprising the further step of adding an inert gas as a carrier or plasma support gas.

9. A chemical vapor deposition process of depositing a bilayer of titanium and titanium nitride onto a semiconductor device, comprising the steps of (i) forming a first gaseous mixture including titanium halide and a first gas that includes silane, (ii) transforming the first mixture by chemical vapor deposition to deposit the titanium film onto the semiconductor device, (iii) forming a second gaseous mixture including titanium halide, ammonia, and the first gas, and (iv) transforming the second mixture by chemical vapor deposition to deposit a titanium nitride film onto the semiconductor device, thereby forming a bilayer of titanium and titanium nitride.

10. A process according to claim 9 wherein the step of inducing a reaction comprises the step of utilizing plasma chemical vapor deposition.

11. A process according to claim 9 wherein the step of inducing a reaction comprises the step of utilizing thermal chemical vapor deposition.

12. A process according to claim 9 wherein the silane is selected from SiH₄, Si₂ H₆ or Si₃ H₈.

13. A process according to claim 9 wherein the titanium halide comprises TiX₄, where X is a halogen selected from the group consisting essentially of chlorine, bromine and iodine.

14. A process according to claim 9 comprising the further step of adding an inert gas as a carrier or plasma support gas.