High density dynamic random access memory cell structure having a polysilicon pillar capacitor

• US 5,595,928 A
• Filed: 09/18/1995
• Issued: 01/21/1997
• Est. Priority Date: 09/18/1995
• Status: Expired due to Term

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Vanguard International Semiconductor Corporation
• Inventors: Tseng, Horng-Huei, Lu, Chih-Yuan
• Primary Examiner(s): TSAI, H JEY
• Application Number:
  US08/529,637
• Time in Patent Office: 491 Days
• Field of Search: 437/52, 437/60, 437/919, 437/47
• US Class Current: 438/253
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H10B 12/03 Making the capacitor or connections thereto
• CPC Class Codes: H10B 12/30 DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

A method for manufacturing an array of stacked capacitor is described that utilizes the sidewall of the capacitor node contact to increase the capacitance on a dynamic random access memory (DRAM) cell. The area occupied by the stacked capacitor is also restricted to the area over the FET source/drain area, thereby providing for the further reduction of the cell size. The method using a single mask level to form node contact openings in a thick insulating layer over the source/drain areas used for the node contact. A doped polysilicon layer is deposited filling the node contact openings and conformally coating the substrate. The polysilicon layer is oxidized to the thick insulating layer but not in the node contact openings. The oxidized portion of the polysilicon layer and the thick insulating layer are removed concurrently in a wet etch leaving free standing pillar-shaped bottom electrodes that also serve as the node contacts. The array of pillar-shaped stacked capacitors are completed by forming a interelectrode dielectric layer on the bottom electrodes and then depositing and patterning another doped polysilicon to form the top electrodes.

Claims

1. A method for fabricating stacked storage capacitors on a semiconductor substrate, comprising the steps of:

providing a semiconductor substrate having field oxide areas surrounded and electrically isolated device areas, said device areas having semiconductor devices formed, in part, from a patterned first polysilicon layer, and said devices areas having device contact areas;

depositing a first insulating layer on said substrate and over said patterned first polysilicon layer,

depositing a second insulating layer on said first insulating layer;

anisotropically etching node contact openings in said second and first insulating layers to said device contact areas, thereby forming node contact openings having essentially vertical sidewalls for stacked storage capacitor bottom electrodes;

depositing a conformal second polysilicon layer, and thereby filling said node contact openings, and also forming a uniformly thick second polysilicon layer elsewhere on said second insulating layer;

oxidizing by thermal oxidation said second poly-silicon layer to said second insulating layer, and thereby leaving unoxidized polysilicon pillars in said node contact openings having essentially vertical sidewalls;

isotropically etching said oxidized portion of said second polysilicon layer, and by said same isotropic etch, etching selectively said second insulating layer to said first insulating layer leaving free standing polysilicon pillars and thereby forming pillar-shaped bottom electrodes;

forming a capacitor interelectrode dielectric layer on said bottom electrodes, and

depositing and patterning a third polysilicon layer, and completing said stacked storage capacitors.

2. The method of claim 1, wherein said first insulating layer is a silicon nitride (Si₃ N₄) layer having a thickness of between about 500 to 1500 Angstroms.

3. The method of claim 1, wherein said second insulating layer is composed of borophosphosilicate glass (BPSG), and has a thickness of between about 5000 to 10000 Angstroms.

4. The method of claim 1, wherein the thickness of said second polysilicon layer is 1000 to 2000 Angstroms.

5. The method of claim 1, wherein the second polysilicon layer is in situ doped with phosphorus (P) during said polysilicon deposition, and said dopant having a concentration of between about 5.0 E 19 to 1.0 E 21 atoms/cm³.

6. The method of claim 1, wherein said dopant in said third polysilicon layer is doped with phosphorus (P) having a concentration in said third polysilicon layer between about 5.0 E 19 to 1.0 E 21 atoms/cm³.

7. The method of claim 1, wherein the thickness of said interelectrode dielectric layer is composed of silicon oxide-silicon nitride-silicon oxide (ONO), having a total thickness of between about 30 to 100 Angstroms.

8. The method of claim 1, wherein the thickness of said third polysilicon layer is between about 1000 to 3000 Angstroms.

9. The method of claim 1, wherein said patterned first polysilicon form the gate electrodes and word lines for field effect transistors (FET) in said device areas, and said FETs and said storage capacitors having pillar shaped bottom electrodes form an array of DRAM cells.

10. The method of claim 1, wherein said pillar shaped bottom electrodes lie between and within said patterned first polysilicon layer, and thereby provide increased capacitance for said storage capacitors.

11. A method for fabricating an array of dynamic random access memory (DRAM) cells on a semiconductor substrate, comprising the step of:

forming on said semiconductor substrate an array device areas, surrounded and electrically isolated by field oxide areas;

depositing and patterning a first polysilicon layer forming gate electrodes for field effect transistors in said device areas and forming word lines elsewhere on said substrate; and

forming lightly doped source/drain areas in said device areas adjacent to said gate electrodes;

forming sidewall spacers on said gate electrodes; and

forming stacked storage capacitors contacting one of source/drain areas of each said field effect transistor in said array of device areas by;

depositing a first insulating layer on said substrate and over said patterned first polysilicon layer,

depositing a second insulating layer on said first insulating layer,

anisotropically etching node contact openings in said second and first insulating layers to said device contact areas, thereby forming node contact openings having essentially vertical sidewalls for stacked storage capacitor bottom electrodes,

depositing a conformal second polysilicon layer, and thereby filling said node contact openings, and also forming a uniformly thick second polysilicon layer elsewhere on said second insulating layer,

oxidizing by thermal oxidation said second polysilicon layer to said second insulating layer, and thereby leaving unoxidized polysilicon pillars in said node contact openings having essentially vertical sidewalls,

isotropically etching said oxidized portion of said second polysilicon layer, and by said same isotropic etch, etching selectively said second insulating layer to said first insulating layer leaving free standing polysilicon pillars and thereby forming pillar-shaped bottom electrodes,

forming a capacitor interelectrode dielectric layer on said bottom electrodes, and

depositing and patterning a third polysilicon layer, and forming the top electrodes for said stacked storage capacitors,

depositing a third insulating layer,

forming bit line contact openings in said third insulating layer and said first insulating layer to the other one of said source/drain contact areas of each said field effect transistor in said device areas;

depositing and patterning a conducting layer and forming an array of bit lines on said third insulating layer and in said bit line contact openings, and thereby completing said dynamic random access memory (DRAM) device having an array of memory cells.

12. The method of claim 11, wherein said first insulating layer is a silicon nitride (Si₃ N₄) layer having a thickness of between about 500 to 1500 Angstroms.

13. The method of claim 11, wherein said second insulating layer is composed of borophosphosilicate glass (BPSG), and has a thickness of between about 5000 to 10000 Angstroms.

14. The method of claim 11, wherein the thickness of said second polysilicon layer is 1000 to 2000 Angstroms.

15. The method of claim 11, wherein the second polysilicon layer is in situ doped with phosphorus (P) during said polysilicon deposition, said dopant having a concentration of between about 5.0 E 19 to 1.0 E 21 atoms/cm³.

16. The method of claim 11, wherein said third polysilicon layer is doped with phosphorus (P) having a concentration in said third polysilicon layer between about 5.0 E 19 to 1.0 E 21 atoms/cm³.

17. The method of claim 11, wherein the thickness of said interelectrode dielectric layer is composed of silicon oxide-silicon nitride-silicon oxide (ONO), having a total thickness of between about 30 to 100 Angstroms.

18. The method of claim 11, wherein the thickness of said third polysilicon layer is between about 1000 to 3000 Angstroms.

19. The method of claim 11, wherein said pillar shaped bottom electrodes lie between and within said patterned first polysilicon layer, and thereby provide increased capacitance for said storage capacitors.