Method of manufacturing CCD image sensor by use of recesses

• US 5,595,930 A
• Filed: 07/26/1995
• Issued: 01/21/1997
• Est. Priority Date: 06/22/1995
• Status: Expired due to Term

• Current Assignee: Intellectual Ventures II LLC (Intellectual Ventures LLC)
• Original Assignee: LG Semico Company Limited (SK Hynix Inc.)
• Inventors: Baek, Euy H.
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US08/507,202
• Time in Patent Office: 545 Days
• Field of Search: 437/2, 437/3, 437/50, 437/53, 437/228 PL, 437/249
• US Class Current: 438/60
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216

Abstract

A charge coupled device (CCD) image sensor formed by producing hemispheric recesses in a lower planarizing layer in places corresponding to photodiodes and filling the recesses to form a dye layer. The recesses filled with dye serve as a concave lenses, which has the overall effect of reducing the height of the CCD as measured from the micro-lenses down to the photodiodes. By properly controlling the refractivity of the micro-lenses (to which the light is incident) and that of the dye layer serving as the concave lens, the light incident to the photodiodes advances with respect to the photodiodes, thus reducing a smear phenomenon and improving sensitivity of the CCD.

Claims

1. A method of manufacturing a CCD image sensor comprising the steps of:

a) forming a plurality of photoelectric conversion devices on a substrate spaced from one another by a predetermined distance;

b) forming a plurality of vertical charge coupled devices between said photoelectric conversion devices;

c) coating a lower planarizing layer on the surface of the exposed substrate, said photoelectric conversion devices and said vertical charge coupled devices;

d) thermally hardening said lower planarizing layer;

e) performing an etching mask operation by coating a photoresist layer onto said thermally-hardened lower planarizing layer;

f) performing an isotropic etching upon the resultant structure subjected to said etching mask operation;

g) forming a plurality of hemispheric recesses by said isotropic etching;

h) removing said photoresist layer after finishing said isotropic etching;

i) forming a dye layer by dyeing said plurality of hemispheric recesses in said lower planarizing layer by means of a plurality of colors;

j) forming an upper planarizing layer on said dye layer; and

k) forming micro-lenses having a proper refractivity on said upper planarizing layer respectively corresponding to said photoelectric conversion devices.

2. A method for manufacturing a CCD as claimed in claim 1, wherein:

the photoresist layer has openings;

wherein each opening is centered over a vertical charge coupled device;

wherein an opening has an octagonal shape having four long sides and four short sides such that the octagonal shape is substantially rectangular, thereby enabling the step f) to produce the circular opening of the hemispheric recess in the lower planarizing layer.

3. A method of manufacturing a CCD image sensor, the method comprising the steps of:

a) providing a substrate;

b) forming a plurality of photoelectric conversion devices on the substrate;

c) forming a plurality of charge coupled devices between said photoelectric conversion devices on the substrate;

d) forming, after the steps b) and c), a lower planarizing layer on the substrate, said photoelectric conversion devices and said charge coupled devices;

e) forming a plurality of recesses in the lower planarizing layer;

f) forming a dye layer in said plurality of recesses in said lower planarizing layer;

g) forming an upper planarizing layer on said dye layer and said lower planarizing layer; and

h) forming micro-lenses on said upper planarizing layer such that the micro-lenses are correspondingly located to said photoelectric conversion devices.

4. A method as in claim 3, wherein the step b) includes:

b1) spacing each photoelectric conversion device a predetermined distance apart from another photoelectric conversion device.

5. A method as in claim 3, wherein:

the charge coupled devices of the step c) are vertical charge coupled devices.

6. A method as in claim 3, wherein the step d) includes:

d1) hardening the lower planarizing layer.

7. A method as in claim 6, wherein:

the step d1) is thermal hardening.

8. A method as in claim 3, wherein the step e) includes:

e1) forming a mask onto the lower planarizing layer;

e2) etching areas of the lower planarizing left exposed by the mask; and

e3) removing the mask.

9. A method as in claim 8, wherein:

the step e2) is isotropic etching.

10. A method as in claim 8, wherein:

the mask has CCD-portions; and

wherein the mask is configured so that each charged coupled device is covered by a CCD-portion,

the area of a CCD-portion is less than an area of a charge couple device such that a CCD-portion incompletely covers a charge coupled device.

11. A method as in claim 8, wherein:

the mask has openings;

wherein each opening is centered over a charge coupled device;

wherein an opening has an octagonal shape having four long sides and four short sides such that the octagonal shape is substantially rectangular, thereby enabling the step e2) to produce a recess that is substantially circular at the upper surface of the lower planarizing layer.

12. A method as in claim 3, wherein:

the recesses of the step e) are hemispheric recesses.

13. A method as in claim 3, wherein:

the step f) forms a plurality of dyes in the dye layer.

14. A method as in claim 13, wherein the plurality of dyes includes:

a magenta dye;

a cyan dye;

a yellow dye; and

a green dye.

15. A method as in claim 3, wherein the step f) includes:

f1) filling in the recesses with the dye layer such that the lower planarizing layer and the dye layer combine to form a substantially flat surface.

16. A method as in claim 3, wherein:

the step h) forms micro-lenses having a non-hemispheric radius of curvature.

17. A method as in claim 3, wherein:

the step h) centers the micro-lenses over the charge coupled devices.

18. A method as in claim 3, wherein:

the step h) forms micro-lenses having a radius of curvature that is greater than a radius of curvature of the recesses.

19. A method as in claim 3, wherein:

the micro-lenses have a refractivity that is smaller than a refractivity of the upper planarizing surface.

20. A method as in claim 19, wherein:

the micro-lenses have a refractivity that is smaller than a refractivity of the dye layer.