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Method for manufacturing a cathode

  • US 5,595,933 A
  • Filed: 08/29/1995
  • Issued: 01/21/1997
  • Est. Priority Date: 02/25/1991
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing an electron source comprising:

  • a) providing a semiconductor substrate having opposing front and rear main surfaces with etch-barrier layers at said front and rear surfaces, said etch-barrier layers being thin relative to the thickness of said substrate,b) removing preselected portions of the etch-barrier layer present at said rear surface,c) anisotrophically etching said substrate starting from the rear surface until the etch-barrier provided at the front surface is reached thereby removing portions of said substrate corresponding to said preselected portions of the etch-barrier present at said rear surface,d) and before or after said etching, providing a heating element and a layer of an electron-emissive material on said front surface at the location of the etch-barrier layer provided at said front surface corresponding to said preselected portions.

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