Method for manufacturing a cathode
First Claim
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1. A method of manufacturing an electron source comprising:
- a) providing a semiconductor substrate having opposing front and rear main surfaces with etch-barrier layers at said front and rear surfaces, said etch-barrier layers being thin relative to the thickness of said substrate,b) removing preselected portions of the etch-barrier layer present at said rear surface,c) anisotrophically etching said substrate starting from the rear surface until the etch-barrier provided at the front surface is reached thereby removing portions of said substrate corresponding to said preselected portions of the etch-barrier present at said rear surface,d) and before or after said etching, providing a heating element and a layer of an electron-emissive material on said front surface at the location of the etch-barrier layer provided at said front surface corresponding to said preselected portions.
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Abstract
A low-power cathode can be obtained by arranging it on a substrate (1), preferably of silicon, which is entirely or partly removed at the location of the emissive structure (11) by means of, for example, anisotropic etching. Because of its low power, the cathode is particularly suitable for multi-beam applications.
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Citations
3 Claims
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1. A method of manufacturing an electron source comprising:
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a) providing a semiconductor substrate having opposing front and rear main surfaces with etch-barrier layers at said front and rear surfaces, said etch-barrier layers being thin relative to the thickness of said substrate, b) removing preselected portions of the etch-barrier layer present at said rear surface, c) anisotrophically etching said substrate starting from the rear surface until the etch-barrier provided at the front surface is reached thereby removing portions of said substrate corresponding to said preselected portions of the etch-barrier present at said rear surface, d) and before or after said etching, providing a heating element and a layer of an electron-emissive material on said front surface at the location of the etch-barrier layer provided at said front surface corresponding to said preselected portions. - View Dependent Claims (2, 3)
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Specification
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Current AssigneeUS Philips Corporation (Koninklijke Philips N.V.)
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Original AssigneeUS Philips Corporation (Koninklijke Philips N.V.)
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InventorsHeijboer, Willem L. C. M.
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Primary Examiner(s)Nguyen, Tuan H.
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Application NumberUS08/520,444Time in Patent Office511 DaysField of Search437/60, 437/974, 437/916, 148/DIG. 135, 148/DIG. 119, 148/DIG. 120US Class Current439/20CPC Class CodesH01J 1/20 Cathodes heated indirectly ...H01J 2201/2878 Thin film or film-likeH01J 29/04 CathodesY10S 148/135 Removal of substrate
