Method of producing micromechanical structures

• US 5,595,940 A
• Filed: 05/22/1995
• Issued: 01/21/1997
• Est. Priority Date: 05/25/1994
• Status: Expired due to Term

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Schilp, Andrea, Laermer, Franz, Trah, Hans-Peter
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): BILODEAU, THOMA
• Application Number:
  US08/446,271
• Time in Patent Office: 610 Days
• Field of Search: 437/225, 437/228, 437/901, 437/921, 216/2, 731/504.14, 731/504.16, 731/514.35, 731/514.36, 252/415, 252/417
• US Class Current: 438/50
• CPC Class Codes: G01P 15/0802 Details

Abstract

In a method of producing micromechanical structures on semiconductor components, in particular on the surface of a wafer containing integrated circuits, provision is made for the micromechanical structures to be provided subsequently on a fully processed semiconductor component using process steps which are normally applied in semiconductor component production and are at most slightly modified, but independently of the semiconductor component production process.

Claims

1. A method of producing a micromechanical structure, comprising the steps of:

providing at least one semiconductor component containing integrated circuits and having at least one surface;

subsequently and independently producing the micromechanical structure on the surface of the semiconductor component;

providing a first resist layer on the semiconductor component;

patterning, in the first resist layer, of at least one sacrificial area using at least one protective mask area;

providing a metal layer on the semiconductor component and on the at least one sacrificial area;

providing a second resist layer on the metal layer, the second resist layer having a thickness at least as large as a height of the micromechanical structure and removing the at least one sacrificial area.

2. The method according to claim 1, further comprising the step of providing a second plasma CVD layer at a low temperature, at approximately 200°

C., on the second resist layer.

3. The method according to claim 2, further comprising the step of providing a third resist layer on the second plasma CVD layer.

4. The method according to claim 3, further comprising the step of producing a mask corresponding to the micromechanical structure in the third resist layer and in the second plasma CVD layer.

5. The method according to claim 4, further comprising the steps of:

patterning the second resist layer in accordance with the mask to form trenches;

filling the trenches by electroplating to produce the micromechanical structure.

6. The method according to claim 5, further comprising the step of at least partially removing at least one of the second plasma CVD layer, the second and third resist layers, and the metal layer, using at least one of etching, ashing, and dissolving.

7. The method according to claim 6, further comprising the step of providing perforations in the micromechanical structure, the perforations being transferred into the metal layer.

8. A method of producing a micromechanical structure, comprising the steps of:

providing at least one semiconductor component containing integrated circuits and having at least one surface;

subsequently and independently producing the micromechanical structure on the surface of the semiconductor component;

providing a first resist layer on the semiconductor component;

patterning, in the first resist layer, of at least one sacrificial area using at least one protective mask area;

providing a metal layer on the semiconductor component and on the at least one sacrificial area;

providing a first plasma CVD layer at a low temperature, at approximately 200°

C., on the metal layer;

providing a second resist layer on the first plasma CVD layer, the second resist layer having a thickness at least as large as a height of the micromechanical structure;

providing a second plasma CVD layer at the low temperature on the second resist layer;

providing a third resist layer on the second plasma CVD layer;

producing a mask corresponding to the micromechanical structure in the third resist layer and in the second plasma CVD layer;

patterning the second resist layer and the first plasma CVD layer in accordance with the mask to form trenches;

filling the trenches by electroplating to produce the micromechanical structure;

at least partially removing at least one of the first and second plasma CVD layers, the second and third resist layers, and the metal layer, using at least one of etching, ashing, and dissolving; and

removing the at least one sacrificial area.

9. The method according to claim 8, further comprising the step of providing perforations in the micromechanical structure, the perforations being transferred into the metal layer.