×

High sensitivity silicon avalanche photodiode

  • US 5,596,186 A
  • Filed: 12/06/1994
  • Issued: 01/21/1997
  • Est. Priority Date: 12/08/1993
  • Status: Expired due to Fees
First Claim
Patent Images

1. A silicon avalanche photodiode for detecting ultraviolet light, the silicon avalanche photodiode comprising a p+ -layer, an n-layer, an n- -layer and an n+ -silicon substrate in order from an entrance side of the ultraviolet light, wherein said p+ -layer has a thickness at least equal to 0.7/α

  • in which α

    is the absorption coefficient of silicon to the ultraviolet light.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×