Process for the production of a reflection-reducing coating on lenses
First Claim
1. Process for applying thin layers onto a synthetic substrate, said process comprisingarranging at least one synthetic substrate in a substrate holder,vaporizing SiO to form layer of SiO on said substrate, said layer having a thickness of one molecule to 50 nm,concurrently with the vaporizing of SiO, irradiating the substrate and the layer of SiO being formed with a first plasma,following formation of said layer of SiO, vaporizing SiO2 to form a layer of SiO2 at least 500 nm thick,concurrently with the vaporizing of SiO2, irradiating the layer of SiO and the layer of SiO2 being formed with a second plasma, andconcurrently with the vaporizing of SiO2, varying process parameters including at least one of plasma power, gas pressure, and coating rate so that the layer of SiO2 has a hardness gradient wherein the SiO2 has a hardness which increases from the SiO layer outward.
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Abstract
The invention relates to a process of providing a scratch-resistant coating for a lens made of an optical material comprising synthetics. In order for the synthetic material, for example a CR 39, to be protected against scratches, a very thin adhesion layer of SiO is applied first, and is subsequently provided with a thick SiO2 layer. Both layers are deposited in a vacuum chamber which comprises both a thermal vaporizer for vaporizing the coating materials and a plasma source for irradiating the substrate simultaneously with application of the vaporized coating material.
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8 Claims
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1. Process for applying thin layers onto a synthetic substrate, said process comprising
arranging at least one synthetic substrate in a substrate holder, vaporizing SiO to form layer of SiO on said substrate, said layer having a thickness of one molecule to 50 nm, concurrently with the vaporizing of SiO, irradiating the substrate and the layer of SiO being formed with a first plasma, following formation of said layer of SiO, vaporizing SiO2 to form a layer of SiO2 at least 500 nm thick, concurrently with the vaporizing of SiO2, irradiating the layer of SiO and the layer of SiO2 being formed with a second plasma, and concurrently with the vaporizing of SiO2, varying process parameters including at least one of plasma power, gas pressure, and coating rate so that the layer of SiO2 has a hardness gradient wherein the SiO2 has a hardness which increases from the SiO layer outward.
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