Image detector

• US 5,598,004 A
• Filed: 07/19/1995
• Issued: 01/28/1997
• Est. Priority Date: 07/20/1994
• Status: Expired due to Term

• Current Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Hughes, John R., Powell, Martin J.
• Primary Examiner(s): Hannaher, Constantine
• Application Number:
  US08/504,195
• Time in Patent Office: 559 Days
• Field of Search: 250/370.09, 250/580
• US Class Current: 250/370.09
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 27/14672 Blooming suppression

Abstract

An image detector (1, 1a) has an array (2) of sensors (3) formed from layers of material provided on a substrate (4) and separated from a biasing electrode (5) by a radiation conversion layer (6) in which charge carriers are generated in response to incident radiation. Each sensor has a collecting electrode (7a, 7b) for collecting charge carriers generated in the radiation conversion layer (6), a capacitor (c) for storing charge and a switching element (8) having at least first and second electrodes (9 and 10) with one (10) of the first and second electrodes being coupled to the collecting electrode (7a, 7b) for enabling charge carriers stored at the sensor (3) to be read out. Each collecting electrode (7a, 7b) extends laterally beyond the associated switching element (8) on an insulating layer (12a, 12b) provided over the switching elements to form the associated capacitor (c) with an underlying reference electrode (12a, 12b) separated from the collecting electrode (7a, 7b) by the insulating layer (11a, 11b).

Claims

1. An image detector for sensing radiation, comprising an array of sensors formed from layers of material provided on a substrate and separated from a biasing electrode by a radiation conversion layer in which charge carriers are generated in response to incident radiation, each sensor comprising a collecting electrode for collecting charge carriers generated in the radiation conversion layer, a capacitor for storing charge and a switching element having at least first and second electrodes on a first insulating layer with one of the first and second electrodes being coupled to the collecting electrode for enabling charge carriers stored at the sensor to be read out, each collecting electrode extending laterally beyond the associated switching element on a second insulating layer provided substantially above said first insulating layer to form the associated capacitor with an underlying reference electrode separate from the collecting electrode by the second insulating layer.

2. An image detector according to claim 1, wherein the reference electrode is formed from the same layer of material as the one electrode.

3. An image detector according to claim 2, wherein each collecting electrode is provided on the second insulating layer and makes contact with the associated one electrode via an aperture formed through the second insulating layer over the one electrode.

4. An image detector according to claim 2, wherein each switching element comprises a thin film transistor.

5. An image detector according to claim 4, wherein each thin film transistor comprises a staggered thin film transistor having its gate electrode closest to the substrate.

6. An image detector according to claim 2, wherein the reference electrodes are coupled together for connection to a common potential.

7. An image detector according to claim 2, wherein the switching elements are arranged in a two dimensional matrix array.

8. An image detector according to claim 1, wherein, for each sensor, the reference electrode is provided on a further insulating layer which is thick in comparison to the layers forming the sensors and which extends over the switching elements, the second insulating layer being provided over the reference electrode.

9. An image detector according to claim 8, wherein each collecting electrode is provided on the second insulating layer and makes contact with the associated one electrode via an aperture formed through the second insulating layer over the one electrode.

10. An image detector according to claim 8, wherein each switching element comprises a thin film transistor.

11. An image detector according to claim 10, wherein each thin film transistor comprises a staggered thin film transistor having its gate electrode closest to the substrate.

12. An image detector according to claim 8, wherein the reference electrodes are coupled together for connection to a common potential.

13. An image detector according to claim 8, wherein the switching elements are arranged in a two dimensional matrix array.

14. An image detector according to claim 1, wherein each collecting electrode is provided on the second insulating layer and makes contact with the associated one electrode via an aperture formed through the second insulating layer over the one electrode.

15. An image detector according to claim 14, wherein each switching element comprises a thin film transistor.

16. An image detector according to claim 14, wherein the reference electrodes are coupled together for connection to a common potential.

17. An image detector according to claim 1, wherein each switching element comprises a thin film transistor.

18. An image detector according to claim 17, wherein each thin film transistor comprises a staggered thin film transistor having its gate electrode closest to the substrate.

19. An image detector according to claim 1, wherein the reference electrodes are coupled together for connection to a common potential.

20. An image detector according to claim 1, wherein the switching elements are arranged in a two dimensional matrix array.