Back-illuminated type photoelectric conversion device

• US 5,598,016 A
• Filed: 12/16/1994
• Issued: 01/28/1997
• Est. Priority Date: 12/27/1993
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Tanabe, Akihito, Tohyama, Shigeru
• Primary Examiner(s): Jackson, Jerome
• Assistant Examiner(s): GUAY, JOHN FRANCIS
• Application Number:
  US08/358,015
• Time in Patent Office: 774 Days
• Field of Search: 257/436, 257/447, 257/448, 257/449, 257/451, 257/455, 257/453-456, 257/228-229
• US Class Current: 257/229
• CPC Class Codes: H01L 27/14806 Structural or functional details thereof
• CPC Class Codes: H01L 31/02325 the optical elements not being integrated nor being directly associated with the device
• CPC Class Codes: H01L 31/108 the potential barrier being of the Schottky type

Abstract

Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance. Optically optimum thickness is assured by individually forming the reflecting plate which optimizes optical properties represented by the absorption of the incident light, and the transparent electrode used for increasing the photodiode capacitance, and also applying a pulse voltage to the transparent electrode at a given timing in such a manner that the potential at the time of resetting of the photodiode potential is lower than that obtained when the charge is accumulated.

Claims

1. A back-illuminated type photoelectric conversion device comprising a reflecting plate disposed, via an insulating film, in opposition to a charge accumulation-type photodiode formed on a semiconductor substrate of the photoelectric conversation device for reflecting light incident from the substrate side through said photodiode and said insulating film toward the photodiode side, and a transparent electrode disposed within said insulating film sandwiched between said reflecting plate and said photodiode in opposition to said photodiode and transparent to the incident light, wherein said transparent electrode is electrically biased and electrically separated from said photodiode.

2. The back-illuminated type photoelectric conversion device set forth in claim 1, wherein said photodiode includes a Schottky junction.

3. The back-illuminated type photoelectric conversion device set forth in claim 1, wherein said conversion device includes a platinum silicide film photoelectric conversion element formed on said substrate.