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Semiconductor device containing microcrystalline germanium & method for producing the same

  • US 5,599,403 A
  • Filed: 06/12/1995
  • Issued: 02/04/1997
  • Est. Priority Date: 12/28/1992
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising a semiconductor layer for generating photocarriers, whereinsaid semiconductor layer is a non-monocrystalline silicon germanium layer containing microcrystalline germanium.

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