Semiconductor device containing microcrystalline germanium & method for producing the same
First Claim
1. A semiconductor device comprising a semiconductor layer for generating photocarriers, whereinsaid semiconductor layer is a non-monocrystalline silicon germanium layer containing microcrystalline germanium.
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Abstract
The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400° to 600° C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.
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10 Claims
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1. A semiconductor device comprising a semiconductor layer for generating photocarriers, wherein
said semiconductor layer is a non-monocrystalline silicon germanium layer containing microcrystalline germanium.
- 9. A method for producing a semiconductor device comprising a step of reacting a radical Rg, produced by irradiating a gas containing germanium with microwaves, with a radical R, produced by irradiating a gas containing silicon and germanium with microwaves, in a region different from the regions in which the radicals Rg and R are generated, thereby forming on a substrate a non-monocrystalline silicon germanium layer containing microcrystalline germanium.
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