Process for forming nitride protective coatings

• US 5,599,404 A
• Filed: 04/25/1995
• Issued: 02/04/1997
• Est. Priority Date: 11/27/1992
• Status: Expired due to Term

• Current Assignee: Donald L. Alger
• Original Assignee: Donald L. Alger
• Inventors: Alger, Donald L.
• Primary Examiner(s): WYSZOMIERSKI, GEORGE P
• Application Number:
  US08/428,570
• Time in Patent Office: 651 Days
• Field of Search: 148/206, 148/207, 148/212, 148/215, 148/216, 148/231, 148/238
• US Class Current: 148/212
• CPC Class Codes: C23C 10/22 Metal melt containing the element to be diffused
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: C23C 8/02 Pretreatment of the material to be coated C23C8/04 takes precedence
• CPC Class Codes: C23C 8/10 Oxidising
• CPC Class Codes: C23C 8/20 Carburising
• CPC Class Codes: C23C 8/24 Nitriding

Abstract

A substrate material to be coated with either a nitride, carbide, or oxide contains a small percent of a specific reactive element, like titanium, which forms very stable nitrides, carbides, or oxides. The material also contains larger percentages of elements, such as chromium, which form less-stable nitrides, carbides, or oxides. When the substrate material is immersed in a process medium which contains reactants, such as nitrogen, carbon, or oxygen, at a chosen elevated temperature and concentration, the less-stable nitrides, carbides, or oxides are reduced and cannot form a coating on the material surface. Thus, only a very stable nitride, carbide, or oxide can form a strong, adherent coating. As such, a stable compound forms on the surface, the surface concentration of the specific reactive element atoms (example: titanium) is depleted in relation to the atom concentration in the bulk material, and a concentration gradient results which causes more of the specific reactive element atoms to diffuse to the surface and react with the reactant in the process medium until a coating of the desired thickness is formed.

Claims

1. A method of forming a specific reactive element barrier layer on a surface of a substrate material, said substrate material being essentially free of free sulfur and other contaminants capable of segregating to said substrate material surface, and further containing specific reactive elements selected from the group consisting of aluminum, titanium, zirconium, tantalum, columbium, silicon, beryllium, manganese, uranium, vanadium, magnesium, thorium, calcium, barium, rare earth elements, and combinations thereof, and elements whose nitrides are less stable than a corresponding nitride of the specified element said method comprising the formation of a nitride barrier layer wherein said barrier layer is formed by:

a) placing at least the surface and contiguous region of said substrate material in contact with a static or flowing process medium at a temperature from about 1000°

F. to about 2000°

F. and containing a specified process medium nitrogen concentration;

b) monitoring and controlling the temperature and concentration of said process medium to maintain the same within the specified ranges;

c) reducing said less stable atom nitrides at the substrate surface and reacting said specific reactive element atom at said substrate surface, said reaction occurring only with said nitrogen provided by said process medium to form a specific reactive element, such formation causing a specific reactive element atom concentration gradient between the surface and interior of said substrate material; and

d) continuing to maintain said substrate material surface in contact with said process medium within said specific temperature range such that said specific reactive element concentration gradient causes said specific reactive atoms in the substrate material interior to diffuse to the surface of said substrate material, where they react with the nitrogen provided by said process medium until a uniform, lateral growth of specific reactive element barrier layer is formed, said barrier layer being strongly bonded to said substrate material surface,

wherein said process medium is selected from the group consisting of;

1) a hydrogen/ammonia atmosphere having a nitrogen concentration from about 0.01 ppm to about 10 ppm; and

2) liquid lithium having a lithium nitride concentration from about 1 ppm to about 500 ppm.

2. The method set forth in claim 1 further comprising, prior to carrying out said method, adding appropriate amounts of one or more of said specific reactive elements to a mixture of components of an initial material which does not contain said specific reactive elements, and forming said substrate material.

3. The method set forth in claim 1 further including, before the step of placing said substrate material into said process medium, adding atoms of said specific reactive element to said substrate material by at least one of physically coating said substrate material surface by mechanical, electrical, magnetic, or thermal methods, or by chemical deposition, electrical deposition, sputtering, or ion plating;

and

then by diffusing atoms of the coated layer into the bulk substrate material by heating said material to a temperature between 1000°

F. and 2000°

F. in a vacuum or high-purity inert gas atmosphere for a sufficient time to cause the diffusion of atoms of the applied surface layer into said substrate material to a depth of about 100 micrometers.

4. The method set forth in claim 3 further including, before the step of diffusing atoms of a specific reactive element beneath said substrate surface, and before the step of placing said substrate material into the process medium first removing any specific reactive elements from the near-surface layer of the bulk substrate material up to a thickness of approximately 100 micrometers, by exposing said substrate material for about 30 minutes to a flowing hydrogen/hydrogen chloride atmosphere, at an elevated temperature between about 1000°

F. and 2000°

F., causing the diffusion of said specific reactive elements to said surface with the subsequent formation of gaseous chlorides and exhausting the gaseous chlorides into a flowing atmosphere and away from said material.

5. The method set forth in claim 1 further including, adding specific reactive element atoms to said substrate material beneath said substrate surface by ion implantation prior to placing said substrate material into said process medium.

6. A method of forming a specific reactive element barrier layer on a surface of a substrate material, said substrate material being essentially free of free sulfur and other contaminants capable of segregating to said substrate material surface, and further containing specific reactive elements selected from the group consisting of aluminum, titanium, zirconium, tantalum, columbium, silicon, beryllium, manganese, uranium, vanadium, magnesium, thorium, calcium, barium, rare earth elements, and combinations thereof, and elements whose nitrides are less stable than a corresponding nitride of the specified element, said method comprising the formation of a nitride barrier layer wherein said barrier layer is formed by:

a) removing any specific reactive elements from the near-surface layer of the bulk substrate material up to a thickness of approximately 100 micrometers, by exposing said substrate material for about 30 minutes to a flowing hydrogen/hydrogen chloride atmosphere, at an elevated temperature between about 1000°

F. and 2000°

F., causing the diffusion of said specific reactive elements to said surface with the subsequent formation of gaseous chlorides and exhausting the gaseous chlorides into a flowing atmosphere and away from said material;

b) adding specific reactive element atoms to said substrate material beneath said substrate surface;

c) placing at least the surface and contiguous region of said substrate material in contact with a static or flowing process medium at a temperature from about 1000°

F. to about 2000°

F. and containing a specified process medium nitrogen concentration;

d) monitoring and controlling the temperature and concentration of said process medium to maintain the same within the specified ranges;

e) reducing said less stable atom nitrides at the substrate surface and reacting said specific reactive element atom at said substrate surface, said reaction occurring only with said provided by said process medium to form a specific reactive element nitride, such formation causing a specific reactive element atom concentration gradient between the surface and interior of said substrate material; and

f) continuing to maintain said substrate material surface in contact with said process medium within said specific temperature range such that said specific reactive element concentration gradient causes said specific reactive atoms in the substrate material interior to diffuse to the surface of said substrate material, where they react with the nitrogen provided by said process medium until a uniform, lateral growth of specific reactive element barrier layer is formed, said barrier layer being strongly bonded to said substrate material surface,

wherein said process medium is selected from the group consisting of;

1) a hydrogen/ammonia atmosphere having a nitrogen concentration from about 0.01 ppm to about 10 ppm; and

2) liquid lithium having a lithium nitride concentration from about 1 ppm to about 500 ppm.

7. A method of forming a specific reactive element barrier layer on a surface of a substrate material, said substrate material being essentially free of free sulfur and other contaminants capable of segregating to said substrate material surface, and further containing specific reactive elements selected from the group consisting of aluminum, titanium, zirconium, tantalum, columbium, silicon, beryllium, manganese, uranium, vanadium, magnesium, thorium, calcium, barium, rare earth elements, and combinations thereof, and elements whose nitrides are less stable than a corresponding nitride of the specified element, said method comprising the formation of a nitride barrier layer wherein said barrier layer is formed by:

a) removing any specific reactive elements from the near-surface layer of the bulk substrate material up to a thickness of approximately 100 micrometers, by exposing said substrate material for about 30 minutes to a flowing hydrogen/hydrogen chloride atmosphere, at an elevated temperature between about 1000°

F. and 2000°

F., causing the diffusion of said specific reactive elements to said surface with the subsequent formation of gaseous chlorides and exhausting the gaseous chlorides into a flowing atmosphere and away from said material;

b) placing at least the surface and contiguous region of said substrate material in contact with a static or flowing process medium at a temperature from about 1000°

F. to about 2000°

F. and containing a specified process medium nitrogen concentration;

c) monitoring and controlling the temperature and concentration of said process medium to maintain the same within the specified ranges;

d) reducing said less stable atom nitrides at the substrate surface and reacting said specific reactive element atom at said substrate surface, said reaction occurring only with said nitrogen provided by said process medium to form a specific reactive element nitride, such formation causing a specific reactive element atom concentration gradient between the surface and interior of said substrate material; and

e) continuing to maintain said substrate material surface in contact with said process medium within said specific temperature range such that said specific reactive element concentration gradient causes said specific reactive atoms in the substrate material interior to diffuse to the surface of said substrate material, where they react with the nitrogen provided by said process medium until a uniform, lateral growth of specific reactive element barrier layer is formed, said barrier layer being strongly bonded to said substrate material surface,

wherein said process medium is selected from the group consisting of;

1) a hydrogen/ammonia atmosphere having a nitrogen concentration from about 0.01 ppm to about 10 ppm; and

2) liquid lithium having a lithium nitride concentration from about 1 ppm to about 500 ppm.