Angular velocity sensor

• US 5,600,065 A
• Filed: 10/25/1995
• Issued: 02/04/1997
• Est. Priority Date: 10/25/1995
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Li, Guang X., Shemansky, Frank A. Jr., Kar, Barun K., Joseph, Eric D., Zhang, Zuoying L.
• Primary Examiner(s): Oda, Christine K.
• Application Number:
  US08/548,017
• Time in Patent Office: 468 Days
• Field of Search: 73/504.12, 73/504.02, 73/504.03, 73/504.04, 73/777, 361/280, 361/290, 280/735, 257/254, 257/417
• US Class Current: 73/504.12
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis

Abstract

Converting a Coriolis force into an electrical signal, an electro-mechanical transducer (10) is a field effect transistor (18) having angular velocity sensing capabilities. A gate electrode (16) is suspended over a channel region (60) of a substrate (31), is biased at a desired potential, and is oscillated along an axis (40). The gate electrode (16) and the substrate (31) are rotated about a different axis (41) at an angular velocity (44). The resulting Coriolis force displaces the suspended gate electrode (16) along yet another axis (42) which modulates a current (53) in the channel region (60) of the substrate (31). The amplitude of the current (53) describes the magnitude of the angular velocity (44).

Claims

1. An angular velocity sensor comprising:

a substrate having a current conducting region;

a seismic mass having a first portion and a second portion overlying the substrate, the first portion overlying the current conducting region to create an air gap between the first portion and the current conducting region;

at least one electrode over the substrate and adjacent to the second portion of the seismic mass wherein the at least one electrode and the second portion of the seismic mass generate electrostatic forces to oscillate the seismic mass along a first axis substantially parallel to the current conducting region.

2. The angular velocity sensor according to claim 1, wherein the seismic mass further comprises a third portion coupled to the substrate to support the first and second portions of the seismic mass over the substrate.

3. The angular velocity sensor according to claim 2, wherein the first portion of the seismic mass is movable relative to the current conducting region and wherein the second portion of the seismic mass is movable relative to the at least one electrode.

4. The angular velocity sensor according to claim 3, wherein the first portion and the second portion of the seismic mass are substantially stationary relative to each other and wherein the first and second portions of the seismic mass are movable relative to the third portion of the seismic mass.

5. The angular velocity sensor according to claim 1, wherein the first portion of the seismic mass controls a current in the current conducting region.

6. The angular velocity sensor according to claim 5, further including a field effect transistor in the substrate, wherein a channel region of the field effect transistor comprises the current conducting region of the substrate and wherein a gate electrode of the field effect transistor comprises the first portion of the seismic mass.

7. The angular velocity sensor according to claim 1, wherein the first and second portions of the seismic mass are electrically conductive.

8. The angular velocity sensor according to claim 7, wherein the seismic mass is comprised of polysilicon.

9. The angular velocity sensor according to claim 8, wherein the first portion of the seismic mass is movable along a second axis to modulate a current in the current conducting region, the second axis substantially perpendicular to the current conducting region and the first axis.

10. The angular velocity sensor according to claim 1, wherein the second portion of the seismic mass and the at least one electrode comprise comb fingers which are interdigitated.

11. A sensor for detecting change in orientation, the sensor comprising:

a substrate having a field effect transistor with a gate electrode over a channel region;

a driving finger over the substrate;

an anchor over the substrate;

a seismic mass supported over the substrate by the anchor and coupled to the gate electrode to control a current in the channel region, the gate electrode supported over the channel region by the seismic mass to create an air gap between the gate electrode and the channel region; and

a comb finger coupled to the seismic mass, supported over the substrate, and adjacent to the driving finger.

12. The sensor according to claim 11, wherein the driving finger and the comb finger produce electrostatic forces to vibrate the seismic mass, the gate electrode, and the comb finger relative to the substrate.

13. The sensor according to claim 12, wherein the gate electrode is movable relative to the channel region to vary the current.

14. The sensor according to claim 11, wherein the anchor, the seismic mass, the gate electrode, the comb finger, and the driving finger are comprised of electrically conducting material.

15. The sensor according to claim 11, wherein the seismic mass has a plurality of holes.

16. The sensor according to claim 11, wherein the air gap exists between the substrate and the seismic mass and between the substrate and the comb finger.

17. An angular velocity sensor comprising:

a substrate;

a plurality of source contacts over the substrate;

a plurality of drain contacts over the substrate;

a plurality of driving fingers over the substrate;

a seismic mass overlying the substrate, having a first side opposite a second side, and having a third side opposite a fourth side, the third side coupling the first and second sides;

a plurality of gate electrodes coupled to each of the first and second sides of the seismic mass, each of the plurality of gate electrodes between one of the plurality of source contacts and one of the plurality of drain contacts;

a plurality of comb fingers coupled to each of the first and second sides of the seismic mass, each of the plurality of comb fingers adjacent to at least one of the plurality of driving fingers;

a first suspension arm coupled to the third side of the seismic mass;

a second suspension arm coupled to the fourth side of the seismic mass;

a first anchor over the substrate and coupled to the first suspension arm; and

a second anchor over the substrate and coupled to the second suspension arm, the first and second anchors supporting the seismic mass, the plurality of gate electrodes, and the plurality of comb fingers over the substrate to create an air gap between the substrate and the seismic mass, the plurality of gate electrodes, and the plurality of comb fingers.

18. The angular velocity sensor according to claim 17, wherein the first and second anchors, the first and second suspension arms, the plurality of gate electrodes, and the plurality of comb fingers are comprised of polysilicon.

19. The angular velocity sensor according to claim 17, wherein the seismic mass has a plurality of holes.