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Vertically integrated sensor structure and method

  • US 5,600,071 A
  • Filed: 07/22/1996
  • Issued: 02/04/1997
  • Est. Priority Date: 09/05/1995
  • Status: Expired due to Term
First Claim
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1. A vertically integrated sensor device comprising:

  • a base substrate having a first major surface, a second major surface opposite the first major surface, and a cavity extending from the second major surface to form a diaphragm, and wherein the base substrate comprises a semiconductor material;

    a transducer formed on the diaphragm;

    a cap substrate having a third major surface and a fourth major surface opposite the third major surface, wherein the third major surface is connected to the first major surface to provide a hermetically sealed chamber, and wherein the cap substrate comprises a semiconductor material; and

    an electronic device formed on the fourth major surface, wherein the electronic device is electrically coupled to the transducer.

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