Sensor including an array of sensor elements and circuitry for individually adapting the sensor elements

• US 5,600,143 A
• Filed: 12/02/1994
• Issued: 02/04/1997
• Est. Priority Date: 12/02/1994
• Status: Expired due to Term

• Current Assignee: L-3 Communications Corporation (L3Harris Technologies, Inc.)
• Original Assignee: Litton Systems Incorporated
• Inventors: Roberts, Peter C. T., Walmsley, Charles F.
• Primary Examiner(s): FIELDS, CAROLYN
• Application Number:
  US08/348,590
• Time in Patent Office: 795 Days
• Field of Search: 250/332, 250/338.1, 250/338.4, 250/349
• US Class Current: 250/349
• CPC Class Codes: G01J 5/30 Electrical features thereof
• CPC Class Codes: H04N 5/33 Transforming infrared radiation cameras or camera modules for generating image signals from infrared radiation H04N23/20; circuitry of SSIS for transforming infrared radiation into image signals H04N25/20

Abstract

An infrared sensor includes a linear array of plural photoconductive sensor elements, and a similarly linear multiplexing circuit arranged in side-by-side relation with the linear array of sensor elements. The multiplexing circuit includes a matching plurality of signal input ports, and a wirebond of plural conductors substantially in parallel conducts signals from the plural sensor elements of the array to the respective signal input ports of the multiplexer circuit. The multiplexer circuit includes a matching plurality of adaptation circuits or cells interposed between the respective sensor elements of the array and the input ports of the multiplexing circuit. Each adaptation cell includes a multi-position switch which by its position varies the transfer function of a feed back circuit of the adaptation cell. Plural modes of signal processing for each individual sensor element of the array are provided according to the positions of the multi-position switches of the plural adaptation cells. The sensor includes a microprocessor which allows each sensor element of the array to be operated in a selected one of the plural modes of operation according to the position of the multi-position switch commanded by the microprocessor.

Claims

1. A photo-conductive infrared sensor comprising:

an array of sensor elements each varying in conductivity in response both to temperature (thermic variation), and to incident photons of infrared light (photonic variation) which is to be measured;

plural adaptation circuits each individually conducting a variable bias current from a source thereof through the respective one of said plural sensor elements, said adaptation circuits each including a resistive element in parallel with a variable-conductance element, said variable-conductance element varying in conductivity in response to a feed back signal to provide a first portion of said bias current resulting from variation of conductivity of said sensor element in response to thermic variation, said resistive element providing a second portion of said bias current resulting from variation of conductivity of said sensor element in response to said photonic variation, and said resistive element also providing a first signal in response to voltage drop there across, each adaptation circuit including a multi-position switch in one position thereof supplying said first signal to said variable-conductance element as said feed back signal.

2. The sensor of claim 1 wherein said plurality of adaptation circuits each further include a frequency-responsive filter, said frequency-responsive filter receiving said first signal and responsively providing a second signal, said multi-position switch in a second position thereof supplying said second signal to said variable-conductance element as said feed back signal.

3. The sensor of claim 2 wherein said plurality of adaptation circuits each further includes said multi-position switch having a third position, said multi-position switch in said third position thereof supplying a signal from an external conductor to said variable-conductance element as said feed back signal.

4. The sensor of claim 1 wherein said plurality of adaptation circuits each further includes a capacitive charge storage element connected between said switch and said variable-conductance element, said multi-position switch having an open position in which charge from said feed back signal is stored on said capacitive charge storage element.

5. The sensor of claim 1 wherein said sensor further includes a plurality of amplifier elements each respectively receiving said first signal from an individual adaptation circuit, and responsively providing an amplified output signal.

6. The sensor of claim 5 wherein said sensor further includes a multiplexer having a respective plurality of signal input ports, said plurality of adaptation cells individually connecting said output signal therefrom with a respective one of said plurality of signal input ports.

7. An infrared sensor comprising:

an array of photoconductive infrared sensor elements each providing a corresponding one of plural electrical signals indicative of infrared radiation falling thereon;

a multiplexing circuit having a like plurality of signal input ports each receiving a respective one of said plural electrical signals and sequentially connecting corresponding signals to an output conductor; and

a like plurality of adaptation input cells each conducting an electrical signal from a respective sensor element of said array to a respective one of said input ports of said multiplexer circuit, each adaptation input cell providing a variably-conductive circuit element conducting a bias current flow through the respective sensor element, and an externally-controllable switch which by its position effects a selective variation in the conductivity of said variably-conductive circuit element.

8. The infrared sensor of claim 7 wherein said infrared sensor includes a linear array of said photoconductive sensor elements, which are disposed at a certain repeat distance along said linear array of sensor elements, said input adaptation cells likewise being disposed at said repeat distance along said multiplexing circuit.

9. The infrared sensor of claim 8 further including a wirebond having plural conductive wires substantially in parallel, said plural conductive wires of said wirebond individually connecting sensor elements of said linear array with respective signal input ports of said multiplexing circuit.

10. An infrared sensor including an adaptation circuit for extracting an output signal from a variably-conductive infrared sensor element, which infrared sensor element varies in conductivity in response both to changes in temperature and in response to an external infrared electromagnetic radiation stimulus which is to be sensed, said adaptation circuit of said infrared sensor comprising:

a resistor, a first transistor, and a capacitor mutually connected in parallel between a source of bias current and said sensor element;

a second transistor connected in series with said sensor element, and with the parallel combination of said resistor, said first transistor and said capacitor between said bias current source and a ground;

a feedback conductor connecting a voltage drop signal from said resistor to a gate of said first transistor and externally of said adaptation circuit as said output signal;

a multiposition switch in a first closed position connecting said voltage drop signal from said resistor to said gate of said first transistor.

11. The infrared sensor of claim 10 wherein said adaptation circuit further includes a low-pass filter receiving said voltage drop signal, said low-pass filter responsively providing a second signal, and said multi-position switch further includes a second closed position in which said second signal is conducted to said gate of said first transistor.

12. The infrared sensor of claim 10 wherein said multi-position switch further includes an open position in which no voltage drop signal is provided to said gate of said first transistor, said first transistor including a virtual capacitance associated with said gate for storing a voltage value of said voltage drop signal supplied thereto while said multi-position switch is closed.

13. The infrared sensor of claim 10 wherein said multi-position switch further includes a third closed position connecting an external conductor of said adaptation circuit to said gate of said first transistor, whereby an external reference voltage level may be applied to said first transistor via said external conductor.

14. The infrared sensor of claim 10 wherein said multi-position switch further includes a command interface allowing said multi-position switch to be placed into any one of its available positions in response to an externally-applied command.

15. A photoconductive infrared sensor comprising:

an array of photoconductive sensor elements each providing a respective output signal in response to infrared light incident thereon;

a multiplexer circuit having a like plurality of signal input ports;

a like plurality of adaptation cell circuits connecting individual output signals from respective sensor elements of said plurality of sensor elements to respective ones of said plurality of input ports;

each adaptation cell circuit of said plurality of adaptation cells including a respective variable feedback loop variation of which varies said output signal from said sensor element, and an externally-controllable multi-position switch varying said feedback loop in dependence upon the position of said switch.

16. The photoconductive infrared sensor of claim 15 wherein said variable feedback loop includes a low-pass filter which is switched into said feedback loop in a selected position of said multi-position switch.

17. The photoconductive infrared sensor of claim 15 wherein said variable feedback loop includes a conductor extending externally of said sensor element to receive an external reference signal, and in a selected position of said multi-position switch said external reference signal being switched into said feedback loop.

18. The photoconductive infrared sensor of claim 15 wherein said variable feedback loop includes a resistor, a first transistor and a capacitor in mutually parallel connection between a source of bias current and a photoconductive element of said sensor, said resistor, first transistor, and capacitor in parallel connection being further in series connection with a second transistor, and said resistor providing a voltage drop signal which is supplied to a gate of said first transistor via said multi-position switch.

19. The photoconductive infrared sensor of claim 15 wherein said adaptation circuit further includes a virtual capacitor for storing a reference voltage charge, said multi-position switch further having an open position in which charge conducted to said virtual capacitor during a preceding interval of switch closure in trapped on said virtual capacitor.