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Data retention circuit and semiconductor memory device using the same

  • US 5,600,588 A
  • Filed: 01/24/1995
  • Issued: 02/04/1997
  • Est. Priority Date: 01/24/1994
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory device comprising:

  • a memory means having a plurality of memory cells, each memory cell including a flip-flop circuit having driver transistors; and

    a threshold voltage control means for controlling respective threshold voltages of said driver transistors,said threshold voltage control means controlling at least each threshold voltage of driver transistors constituting a selected memory cell to be a first threshold voltage when said memory device is in an accessed state of the memory device, and said threshold voltage control means controlling threshold voltages of all of respective driver transistors constituting each memory cell to be a second threshold voltage different from said first threshold voltage when said memory device is in a stand-by state of the memory device.

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