Methods for fabricating flat panel display systems and components

• US 5,601,966 A
• Filed: 06/07/1995
• Issued: 02/11/1997
• Est. Priority Date: 11/04/1993
• Status: Expired due to Term

• Current Assignee: SI Diamond Technology, Inc. (Nano Magic, Inc.)
• Original Assignee: Microelectronics and Computer Technology Corporation
• Inventors: Xie, Chenggang, Kumar, Nalin
• Primary Examiner(s): Duda, Kathleen
• Application Number:
  US08/475,167
• Time in Patent Office: 615 Days
• Field of Search: 430/311, 430/313, 430/318, 430/320, 430/323, 156/625.1, 156/644.1, 216/41, 427/259, 427/272
• US Class Current: 430/313
• CPC Class Codes: H01J 2201/30457 Diamond
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group
• CPC Class Codes: H01J 9/025 of field emission cathodes

Abstract

A method is provided for fabricating a display cathode which includes forming a conductive line adjacent a face of a substrate. A region of amorphic diamond is formed adjacent a selected portion of the conductive line.

Claims

1. A method of fabricating a pixel of a triode pixel display cathode comprising the steps of:

forming a conductive stripe on a face of a substrate;

forming a layer of insulator on the conductive stripe;

forming a layer of conductor on the insulator layer;

patterning and etching the layer of insulator and the layer of conductor to form a plurality of apertures exposing portions of the conductive stripe;

etching through the apertures to undercut portions of the layer of insulator forming a portion of a sidewall of each of the apertures; and

forming regions of amorphic diamond on the exposed portions of the conductive stripe.

2. The method of claim 1 wherein said step of forming regions of amorphic diamond comprises the step of forming regions of amorphic diamond by laser ablation.

3. The method of claim 1 wherein said step of forming regions of amorphic diamond comprises a step of forming region of amorphic diamond by laser plasma deposition.

4. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by chemical vapor deposition.

5. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by ion beam deposition.

6. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by sputtering.

7. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by low temperature deposition.

8. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by evaporation.

9. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by cathodic arc evaporation.

10. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by laser acoustic wave deposition.

11. The method of claim 1 wherein said step of forming a region of amorphic diamond comprises a step of forming a region of amorphic diamond by magnetically separated cathodic arc evaporation.

12. The method of claim 1, wherein said regions of amorphic diamond have substantially flat emission surfaces.

13. The method of claim 1, wherein a plurality of portions of the conductive stripe are exposed by the plurality of apertures in the step of patterning and etching.

14. The method of claim 1, wherein the layer of insulator produces a plurality of spacers on the conductive stripe after the step of etching through the apertures.

15. The method of claim 14, wherein each of the plurality of spacers has a metal gate formed thereon.

16. The method of claim 1, wherein the step of forming regions of amorphic diamond produces a plurality of emitter regions on the conductive stripe.

17. The method of claim 16, wherein the plurality of emitter regions are separated by spacers formed from the layer of insulator as a result of the step of etching through the apertures.

18. The method of claim 1, wherein the patterning and etching step further comprises the steps of:

forming a mask of photoresist having a plurality of apertures therethrough on the layer of conductor wherein the apertures expose a plurality of regions of the layer of conductor;

etching the layer of conductor and the layer of insulator through the photoresist mask leaving a plurality of spacers formed on the conductive stripe; and

removing the photoresist mask.

19. A method of fabricating a triode display cathode plate comprising the steps of:

forming a plurality of spaced apart conductive stripes on a face of a substrate;

forming a layer of insulator on the conductive stripes;

forming a layer of conductor on the insulator layer;

patterning and etching the layer of insulator and the layer of conductor to form a plurality of apertures exposing portions of the conductive stripes;

etching through the apertures to undercut portions of the layer of insulator forming a portion of a sidewall of each of the apertures; and

forming regions of amorphic diamond on the exposed portions of the conductive stripes.

20. The method of claim 19 wherein the substrate comprises glass.

21. The method of claim 19 wherein the layer of insulator comprises silicon dioxide.

22. The method of claim 19 wherein the conductive stripes comprise chromium.

23. The method of claim 19 wherein the layer of conductor comprises titanium.

24. The method of claim 19 wherein the layer of conductor comprises tungsten.

25. The method of claim 19 wherein said step of etching through the apertures comprises a step of wet etching using a buffer-HF solution.

26. The method of claim 19 wherein said step of forming regions of amorphic diamond comprises a step of forming regions of amorphic diamond by laser ablation.

27. The method of claim 19, wherein said regions of amorphic diamond have substantially flat emission surfaces.

28. The method of claim 19, wherein a plurality of portions of each of the conductive stripes are exposed by the plurality of apertures.

29. The method of claim 19, wherein the layer of insulator forms a plurality of spacers on each of the conductive stripes after the step of etching through the apertures.

30. The method of claim 29, wherein each of the plurality of spacers has a metal gate formed thereon.

31. The method of claim 19, wherein the step of forming regions of amorphic diamond produces a plurality of emitter regions on each of the conductive stripes.

32. The method of claim 31, wherein the plurality of emitter regions are separated by spacers formed from the layer of insulator as a result of the step of etching through the apertures.

33. A method of fabricating a pixel of a triode pixel display cathode comprising the steps of:

forming a conductive stripe on a face of a substrate;

forming a layer of insulator on the conductive stripe;

forming a layer of conductor on the insulator layer;

patterning and etching the layer of insulator and the layer of conductor to form a plurality of apertures exposing portions of the conductive stripe;

etching through the apertures to undercut portions of the layer of insulator forming a portion of a sidewall of each of the apertures; and

forming regions of low work function material on the exposed portions of the conductive stripe.

34. The method of claim 33, wherein said regions of amorphic diamond have substantially flat emission surfaces.

35. The method of claim 33, wherein the layer of insulator produces a plurality of spacers on the conductive stripe after the step of etching through the apertures.

36. The method of claim 35, wherein each of the plurality of spacers has a metal gate formed thereon.

37. The method of claim 33, wherein the step of forming regions of amorphic diamond produces a plurality of emitter regions on the conductive stripe.

38. The method of claim 37, wherein the plurality of emitter regions are separated by spacers formed from the layer of insulator as a result of the step of etching through the apertures.