Microbolometer detector element with enhanced sensitivity

• US 5,602,393 A
• Filed: 06/07/1995
• Issued: 02/11/1997
• Est. Priority Date: 06/07/1995
• Status: Expired due to Term

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Gerard, Henry M.
• Primary Examiner(s): Hannaher, Constantine
• Assistant Examiner(s): Glick, Edward J.
• Application Number:
  US08/479,917
• Time in Patent Office: 615 Days
• Field of Search: 250/338.1, 250/338.4, 250/332, 250/370.08, 250/349
• US Class Current: 250/338.4
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Abstract

A microbolometer detector element includes an optically absorptive material structure that absorbs a portion of incident radiation, and has a plurality of openings that diffract other portions of the incident radiation. The absorptive structure has an electrical resistivity that varies as a function of its temperature. An optical radiation director re-directs the diffracted optical radiation back to the absorptive structure. The distance between the radiation director and the absorptive structure is tuned so that, for a predetermined design wavelength, optical radiation that is re-directed back to the absorptive structure constructively interferes with incident optical radiation that is not reflected by the absorptive structure. The constructive interference causes the absorptive structure to absorb substantially more optical radiation at the design wavelength than at other wavelengths. The re-directed radiation also destructively interferes with incident optical radiation that is reflected by the absorptive structure, thereby suppressing reflection of radiation. A circuit is connected to the absorptive structure to measure its electrical resistivity.

Claims

1. A microbolometer detector element, comprising:

an optically absorptive material structure characterized by an electrical resistivity that varies as a function of its temperature, said structure absorbing a portion of incident optical radiation at a design wavelength, and having a plurality of openings that diffract another portion of said incident optical radiation,

a radiation director spaced from said absorptive structure and positioned to redirect said diffracted radiation to said structure, the spacing causing said re-directed radiation to constructively interfere with incident radiation at said structure that has not been reflected by said structure, and destructively interfere with incident radiation at said structure that has been reflected by said structure, and

a sensor connected to sense said absorptive structure'"'"'s electrical resistivity.

2. The detector element of claim 1, wherein said openings diffract a significant portion of incident radiation with wavelengths between about one-tenth and twice the opening size.

3. The detector element of claim 1, wherein the sizes of said openings are approximately equal to said predetermined design wavelength.

4. The detector element of claim 1, wherein said optically absorptive material structure comprises a polycrystalline semiconductor layer.

5. The detector element of claim 1, wherein said radiation director comprises a mirror.

6. The detector element of claim 5, wherein said mirror is spaced from the center of said absorptive structure by a distance substantially equal to one-quarter of said design wavelength.

7. A microbolometer detector element with increased sensitivity at a design optical wavelength, comprising:

a semiconductor substrate,

readout circuitry fabricated on said semiconductor substrate,

a dielectric layer on said readout circuitry,

a reflective layer on said dielectric layer,

an optically transmissive, thermally insulating dielectric bridge structure with leg portions disposed on said semiconductor substrate, and a planar upper portion, and

an optically absorptive material layer on said upper bridge portion having an electrical resistivity that varies as a function of its temperature, and positioned with its center spaced from said reflective layer by a distance approximately equal to one-quarter of said design wavelength, said absorptive layer absorbing a portion of incident optical radiation at said design wavelength, and having a plurality of openings that diffract another portion of said incident optical radiation onto said reflective layer,

said readout circuitry being connected to said optically absorptive material layer to sense its electrical resistivity.

8. The detector element of claim 7, wherein said openings diffract a significant portion of incident radiation whose wavelengths are between about one-tenth and twice the opening size.

9. The detector element of claim 7, wherein the sizes of said openings are approximately equal to said design wavelength.

10. The detector element of claim 7, wherein said openings are circular-shaped.

11. The detector element of claim 7, wherein said absorptive material layer comprises a polycrystalline semiconductor layer.

12. The detector element of claim 11, wherein said polycrystalline semiconductor layer is selected from the group consisting of vanadium oxide and titanium oxide.

13. The detector element of claim 11, further comprising an optically transmissive dielectric layer on said polycrystalline semiconductor layer.

14. The detector element of claim 7, wherein the center-to-center spacing between said openings is no smaller than the thickness of said absorptive material layer.

15. The detector element of claim 7, wherein said reflective material layer comprises a thin metal coating selected from the group consisting of Au, Pt, and Al.

16. The detector element of claim 7, wherein said substrate is a silicon substrate.

17. The detector element of claim 16, wherein said dielectric layer and said dielectric bridge structure comprises silicon nitride.

18. A method of sensing incident optical radiation, comprising the steps of:

absorbing a portion of said incident radiation with an absorptive structure whose electrical resistivity varies as a function of its temperature,

providing openings in said absorptive structure for diffracting another portion of said incident radiation,

re-directing said diffracted radiation to said absorptive structure,

adjusting the phase of said re-directed diffracted radiation so that, at a predetermined design wavelength, it constructively interferes at said structure with incident radiation that has not been reflected by said structure, and destructively interferes with incident radiation that has been reflected by said structure, and

sensing the temperature change induced in said structure by the radiation absorption.

19. The method of claim 18, wherein the phase of said re-directed diffracted radiation is adjusted to increase absorption and reduce reflection of incident optical radiation, at said predetermined design wavelength, at said absorptive structure.

20. The method of claim 18, wherein the size of said openings are made substantially equal to said design wavelength, and said diffracted radiation is re-directed to said structure by reflecting it with a reflector.

21. The method of claim 20, wherein the phase of said re-directed radiation is adjusted by adjusting the distance between said reflector and said absorptive structure.