Chemical vapor deposition apparatus activated by a microwave plasma

• US 5,603,771 A
• Filed: 03/23/1995
• Issued: 02/18/1997
• Est. Priority Date: 09/24/1992
• Status: Expired due to Term

• Current Assignee: Office National D'Etudes et de Recherches Aerospatiales
• Original Assignee: Office National D'Etudes et de Recherches Aerospatiales
• Inventors: Le Pennec, Claude, Seiberras, Ghislaine, LePrince, Philippe, Indrigo, Claude, Bejet, Michel, Mevrel, Remy
• Primary Examiner(s): Breneman, R. Bruce
• Assistant Examiner(s): CHANG, JONI YUK YING
• Application Number:
  US08/403,780
• Time in Patent Office: 698 Days
• Field of Search: 118/726, 118/723 MW, 118/723 ME, 156/345, 204/298.38, 204/298.07
• US Class Current: 118/723.0ME
• CPC Class Codes: C23C 16/4481 by evaporation using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/511 using microwave discharges

Abstract

Apparatus for plasma activated chemical vapor deposition, the apparatus comprising a microwave-excited plasma reactor with a reaction enclosure (10), a microwave generator (20), a waveguide (21) providing non-resonant coupling, and insertion means (40-54) for inserting at least one flow of a predetermined gaseous mixture into the enclosure; the insertion means comprise, in order: transformation means (40-43) for transforming the state of a precursor of a material to be deposited to bring it to the gaseous state, feed means (41, 42) for feeding a vector gas suitable for being charged with the gaseous precursor to constitute the above-mentioned predetermined gaseous mixture; and injection means (18) for injecting the predetermined gaseous mixture into the enclosure (10) and comprising an externally frustoconical nozzle provided with an injection orifice situated at one end and shaped as a function of the injection orifice and of the column configuration of the plasma formed, said nozzle having means for heating and thermally insulating the gaseous mixture.

Claims

1. Apparatus for plasma activated chemical vapor deposition, the apparatus comprising:

a plurality of transformation means, each for transforming the state of a respective precursor of a deposition material to cause each of said respective precursors to pass from an initial state of matter to a gaseous state to provide a plurality of gaseous precursors;

a plurality of charging means, each for charging respective vector gas with a respective one of said plurality of gaseous precursors to form a plurality of precursor-charged gaseous mixtures;

a plurality of transfer means, each for transferring a respective one of said predetermined plurality of gaseous mixtures from a respective charging means to a plasma reactor having microwave excitation comprising a reaction enclosure, a microwave generator, and at least one waveguide interposed between said generator and the enclosure and providing non-resonant coupling; and

injection means for injecting said plurality of gaseous mixtures into said reaction enclosure in the form of a jet of ionized gas;

each of said plurality of transfer means for transferring a respective one of said plurality of gaseous mixtures being independent of other of said plurality of transfer means, said injection means including a nozzle of frustoconical external profile, said nozzle having an inlet for receiving said plurality of gaseous mixtures from said plurality of transfer means and having at least one injection orifice outlet for injecting said jet of ionized gas into said reaction enclosure, said nozzle being shaped as a function of a desired configuration of said jet of ionized gas, said nozzle being fitted with heating means and with thermal insulation means.

2. Deposition apparatus according to claim 1, wherein each of said plurality of transformation means comprise at least one chamber and means for adjusting temperature and/or pressure within said chamber.

3. Deposition apparatus according to claim 1, wherein each of said plurality of charging means is adapted to pass a respective vector gas through a respective precursor in powder form.

4. Deposition apparatus according to claim 1, wherein a respective vector gas is inert relative to a respective precursor.

5. Deposition apparatus according to claim 1, wherein a respective vector gas is chemically reactive with a respective precursor.

6. Deposition apparatus according to claim 1, wherein at least one of said plurality of transfer means comprises a transfer tube that is heated and/or thermally insulated, and at least one stop valve that is heated and/or thermally insulated.

7. Deposition apparatus according to claim 1, wherein said nozzle includes a mixing chamber for mixing said plurality of gaseous mixtures, said mixing chamber being located upstream of said injection orifice outlet.

8. Deposition apparatus according to claim 1, wherein said nozzle is provided with a single outlet orifice.

9. Deposition apparatus according to claim 1, wherein said nozzle is provided with a multiplicity of outlet orifices defined by a subdivision means.

10. Deposition apparatus according to claim 9, wherein said subdivision means comprises a grid or trellis.

11. Deposition apparatus according to claim 9, wherein said subdivision means comprise a perforated plate.