Method for producing a surface structure with reliefs

• US 5,604,081 A
• Filed: 07/28/1993
• Issued: 02/18/1997
• Est. Priority Date: 08/14/1992
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Stoll, Lothar
• Primary Examiner(s): Chapman, Mark A.
• Application Number:
  US08/098,101
• Time in Patent Office: 1,301 Days
• Field of Search: 430/321, 430/323, 430/324, 430/322, 430/325, 430/326, 430/394
• US Class Current: 430/322
• CPC Class Codes: G03F 7/001 Phase modulating patterns, e.g. refractive index patterns
• CPC Class Codes: G03F 7/201 characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask

Abstract

A method for producing relief surface structures comprises the step of providing a photoresist layer having a relief surface structure on a surface of a substrate, the relief structure of the photoresist layer being like the surface relief structure desired on the substrate, then removing the photoresist layer with an erosion process that erodes both the photoresist layer as well as the substrate material which is free of the photoresist layer or becomes free of the photoresist layer. To obtain the relief surface structure in the photoresist layer, the layer can be exposed with different amounts of exposure and then developed to form the relief structure

Claims

1. A method for producing a surface relief structure on a substrate, said relief structure being selected from a group of structures on the substrate including a waveguide on the substrate, optical layer thickness tapers on the substrate, a geodetic lens on the substrate, an integrated microlens on the substrate, a Fresnel lens, and a relief surface structure for micromechanics, said method comprising the steps of providing a substrate having a photoresist layer of a uniform thickness, exposing a first field of the photoresist layer with a uniform first exposure dose to form a first exposed field and a first unexposed area, then exposing a second field, which includes the first exposed field and a portion of the first unexposed area, with a uniform second exposure dose to form a second exposed field and a second unexposed area, developing the photoresist to form a developed photoresist layer having at least two areas of different thicknesses to form a relief surface structure corresponding to the surface relief structure to be produced, then forming the surface relief structure by etching with a reactive ion beam etching process to remove the photoresist layer and any surface of the substrate free of the photoresist layer and becoming free of said photoresist layer so that the surface of the substrate has a relief structure in the surface with different depths due to the different thicknesses of the developed photoresist layer.

2. A method according to claim 1, wherein the exposure doses are the same amounts.

3. A method according to claim 1, wherein the exposure doses are different amounts.

4. A method according to claim 1, which includes a step of exposing a third exposure field including the second exposed field and a portion of the second unexposed area so that the developed photoresist has at least three areas of different thicknesses.

5. A method according to claim 1, wherein the step of exposing a first field uses a first mask with a first opening, the step of exposing a second field uses a second mask with a second opening larger than the first opening.

6. A method according to claim 1, wherein the reactive ion beam process utilizes N₂ and O₂ as etching gases.

7. A method according to claim 1, wherein the step of developing is controlled by observing the amount of the removal of the photoresist layer.