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Method for forming a multilayer integrated circuit

  • US 5,604,137 A
  • Filed: 06/02/1995
  • Issued: 02/18/1997
  • Est. Priority Date: 09/25/1991
  • Status: Expired due to Term
First Claim
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1. A method for forming a semiconductor device comprising the steps of:

  • forming a first MOS transistor of one conductivity type on a semiconductor substrate;

    forming an insulating film on said first MOS transistor;

    selectively forming a semiconductor film on said insulating film;

    forming an opening in said insulating film;

    forming a gate electrode on said semiconductor film;

    oxidizing a material of said gate electrode;

    introducing an impurity into said semiconductor film to form a doped region therein; and

    forming an electrode connecting said doped region with one of source and drain of said first MOS transistor,wherein said electrode is in contact with top and side surfaces of said doped region.

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