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Method for forming low refractive index film comprising silicon dioxide

  • US 5,605,609 A
  • Filed: 10/17/1994
  • Issued: 02/25/1997
  • Est. Priority Date: 03/03/1988
  • Status: Expired due to Term
First Claim
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1. A method for forming a low refractive index film comprising silicon dioxide as the main component, by a DC sputtering method in an oxygen-containing atmosphere by means of a target comprising Si as the main component, which target contains Zr in an amount of from 4 to 35 atoms relative to from 65 to 96 atoms of Si.

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