Silicon oxide resonant tunneling diode structure
First Claim
Patent Images
1. A resonant tunneling diode, comprising:
- (a) a first terminal, a second terminal, and a quantum well, said quantum well made of a first material; and
(b) first and second tunneling barriers, said first tunneling barrier separating said quantum well from said first terminal and said second tunneling barrier separating said quantum well from said second terminal, said first tunneling barrier characterized by first regions of said first material and which extend from said quantum well through said first tunneling barrier to said first terminal and second regions of a second material which forms a heterojunction with said first material, said first and second regions of complementary nonperiodic patterns.
1 Assignment
0 Petitions
Accused Products
Abstract
A resonant tunneling diode (400) made of a silicon quantum well (406) with silicon oxide tunneling barriers (404, 408). The tunneling barriers have openings (430) of size smaller than the electron wave packet spread to insure crystal alignment through the diode without affecting the tunneling barrier height, and the openings (430) have an irregular (nonperiodic) shape.
243 Citations
9 Claims
-
1. A resonant tunneling diode, comprising:
-
(a) a first terminal, a second terminal, and a quantum well, said quantum well made of a first material; and (b) first and second tunneling barriers, said first tunneling barrier separating said quantum well from said first terminal and said second tunneling barrier separating said quantum well from said second terminal, said first tunneling barrier characterized by first regions of said first material and which extend from said quantum well through said first tunneling barrier to said first terminal and second regions of a second material which forms a heterojunction with said first material, said first and second regions of complementary nonperiodic patterns. - View Dependent Claims (2, 3, 4)
-
-
5. An integrated circuit, comprising:
-
(a) a silicon-based transistor; and (b) a silicon resonant tunneling diode with tunneling barriers including an amorphous silicon-oxygen compound, said diode coupled to said transistor. - View Dependent Claims (6, 7, 8, 9)
-
Specification