Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit

• US 5,606,186 A
• Filed: 08/09/1995
• Issued: 02/25/1997
• Est. Priority Date: 12/20/1993
• Status: Expired due to Fees

• Current Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Noda, Minoru
• Primary Examiner(s): Crane, Sara W.
• Assistant Examiner(s): WILLIAMS, ALEXANDER O
• Application Number:
  US08/512,916
• Time in Patent Office: 566 Days
• Field of Search: 257/778, 257/773, 257/774, 257/777, 257/723, 257/343, 257/382, 257/383, 257/401, 257/463, 257/37-39, 257/67, 257/96, 257/97, 257/105, 257/146, 257/200, 257/195, 257/189 , 257/196, 257/187, 257/278, 257/279, 257/289, 257/523, 257/508, 257/505, 257/742, 257/272, 257/226
• US Class Current: 257/226
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout

Abstract

An insulating film having a through hole aligned with an electrode on a first semiconductor element is formed on a first semiconductor substrate and a metal is disposed in the through hole. A second semiconductor element on a second semiconductor substrate is placed on the insulating film in such a way that an electrode of the second semiconductor element contacts the metal. Thus, a plurality of transistors having different performance characteristics and functions can be easily disposed adjacent to each other for improved integration.

Claims

1. A semiconductor integrated circuit comprising:

a first semiconductor substrate having a top surface;

a first semiconductor element on the top surface of said first semiconductor substrate;

a first electrode on said first semiconductor element;

a second semiconductor substrate made of a material different from said first semiconductor substrate, having a bottom surface, and arranged with the bottom surface opposite the top surface of said first semiconductor substrate;

a second semiconductor element on the bottom surface of said second semiconductor substrate;

a second electrode on said second semiconductor element;

a solid electrically insulating film disposed between and contacting both the top surface of said first semiconductor substrate and the bottom surface opposite said second semiconductor substrate; and

an electrical conductor extending through said insulating film from and connecting the first electrode to the.

2. The semiconductor integrated circuit in accordance with claim 1, wherein said second semiconductor substrate is arranged opposite only part of said first semiconductor substrate.

3. The semiconductor integrated circuit in accordance with claim 1, wherein

said first semiconductor substrate is silicon, and

said second semiconductor substrate is gallium arsenide.

7. The semiconductor integrated circuit in accordance with claim 1, wherein said insulating film includes a polyimide resin.

8. The semiconductor integrated circuit in accordance with claim 1, wherein said insulating film has a thickness ranging from 1 to 100 microns.

4. A method of manufacturing a semiconductor integrated circuit comprising:

forming a first semiconductor element on a first surface of a first semiconductor substrate;

forming a second semiconductor element on a first surface of a second semiconductor substrate made of a material different from the first semiconductor substrate;

forming a first electrode on said first semiconductor element;

forming a second electrode on said second semiconductor element;

forming a solid electrically insulating film on and in contact with the first surface of said first semiconductor substrate and said first electrode;

forming a through hole in said insulating film at a position aligned with said first electrode;

filling the through hole with an electrically conductive material contacting said first electrode; and

placing said second semiconductor substrate on and in contact with said insulating film so that said second electrode contacts said electrically conductive material.

5. The method of manufacturing a semiconductor integrated circuit in accordance with claim 4, wherein:

forming said insulating film includes mixing an adhesive resin and an insulating resin to obtain a mixed resin; and

applying said mixed resin to said first surface of said first semiconductor substrate and said first electrode.

6. The method of manufacturing a semiconductor integrated circuit in accordance with claim 4, wherein

said first semiconductor substrate is silicon, and

said second semiconductor substrate is gallium arsenide.

9. The method of manufacturing a semiconductor integrated circuit in accordance with claim 4 including forming said insulating film of a polyimide resin.

10. The method of manufacturing a semiconductor integrated circuit in accordance with claim 5, wherein said insulating resin is a polyimide resin.

11. The method of manufacturing a semiconductor integrated circuit in accordance with claim 4 including forming said insulating film to a thickness within a range of 1 to 100 microns.

12. The method of manufacturing a semiconductor integrated circuit in accordance with claim 5 including, after applying said mixed resin, firing said mixed resin.

13. The method of manufacturing a semiconductor integrated circuit in accordance with claim 4 including, after filling the through hole and before placing said second semiconductor substrate on said insulating film, applying an adhesive layer to said insulating film.