Electrostatic chuck

• US 5,607,541 A
• Filed: 03/26/1992
• Issued: 03/04/1997
• Est. Priority Date: 03/29/1991
• Status: Expired due to Term

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Kawai, Makoto, Kubota, Yoshihiro
• Primary Examiner(s): Edwards, Laura
• Application Number:
  US07/857,848
• Time in Patent Office: 1,804 Days
• Field of Search: 156/89, 361/234, 361/230, 29/25.92, 461/234, 501/12
• US Class Current: 156/538
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: Y10T 156/17 Surface bonding means and/or assemblymeans with work feeding or handling means

Abstract

An improvement is proposed in an electrostatic chuck, which is used in holding and transporting, for example, a semiconductor silicon wafer under processing in the manufacture of electronic devices, having an internal electrode layer sandwiched between two dielectric layers of a ceramic material. The disadvantage caused by the inherent porosity of the ceramic material can be dissolved by the invention according to which the pores are filled with a thermally decomposable liquid compound of silicon, aluminum and the like and then the ceramic material is heated in an oxidizing atmosphere so as to decompose and oxidise the impregnant compound into the oxide formed in situ and filling the pores so that the electrostatic attractive force can be increased as a consequence of the increase in the effective dielectric constant along with high resistance against any corrosive gaseous atmosphere as compared with conventional pore-filling materials such as epoxy resins.

Claims

1. An electrostatic chuck which comprises:

two dielectric layers each made from porous electrically insulating ceramic material; and

an internal electrode layer integrally interposed between the dielectric layers, the pores in the ceramic material being filled with an oxide of an inorganic element formed in situ.

2. The electrostatic chuck as claimed in claim 1 in which the inorganic element is selected from the group consisting of silicon, aluminum and magnesium.