Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique

• US 5,608,593 A
• Filed: 03/09/1995
• Issued: 03/04/1997
• Est. Priority Date: 03/09/1995
• Status: Expired due to Fees

• Current Assignee: Matsushita-Kotobuki Electronics Industries, Ltd.
• Original Assignee: Quantum Peripherals Colorado, Inc.
• Inventors: Kim, Young K., Nix, J. Lamar
• Primary Examiner(s): EVANS, JEFFERSON A
• Application Number:
  US08/401,553
• Time in Patent Office: 726 Days
• Field of Search: 360/113, 360/126, 324/252, 338/32 R
• US Class Current: 360/324.12
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G01R 33/093 using multilayer structures, e.g. giant magnetoresistance sensors thin magnetic films H01F10/00
• CPC Class Codes: G11B 2005/3996 large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: G11B 5/3967 Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read G11B5/3906 takes precedence
• CPC Class Codes: G11B 5/399 with intrinsic biasing, e.g. provided by equipotential strips
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.

Claims

1. A spin valve type magnetoresistive sensor incorporating active and pinned ferromagnetic layers separated by a nonmagnetic spacer layer formed on a substrate, wherein the improvement in combination comprises:

a pinning layer overlying said substrate, said pinning layer underlying said pinned ferromagnetic layer;

said spacer and active ferromagnetic layers comprising a mesa structure overlying said pinned ferromagnetic layer and having tapered opposing sides thereof; and

a separation layer overlying said pinned ferromagnetic layer and said tapered opposing sides of said mesa structure, said separation layer also overlying a predetermined portion of an upper surface of said active ferromagnetic layer adjoining said tapered opposing sides.

2. The spin valve type magnetoresistive sensor of claim 1 further comprising:

an underlayer formed on said substrate and interposed between said substrate and said pinning layer.

3. The spin valve type magnetoresistive sensor of claim 2 wherein said underlayer is selected from a group consisting of (Ta or oxides of Al or Si).

4. The spin valve type magnetoresistive sensor of claim 2 further comprising a buffer layer interposed between said underlayer and said pinning layer.

5. The spin valve type magnetoresistive sensor of claim 4 wherein said buffer layer is selected from a group consisting of (Cu or NiCr).

6. The spin valve type magnetoresistive sensor of claim 5 wherein said buffer layer is substantially between 50-300 Å

thick.

7. The spin valve type magnetoresistive sensor of claim 4 wherein said buffer layer comprises Cr.

8. The spin valve type magnetoresistive sensor of claim 7 wherein said buffer layer is substantially between 50-100 Å

thick.

9. The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers comprise a transition metal.

10. The spin valve type magnetoresistive sensor of claim 1 wherein said active and pinned ferromagnetic layers are substantially between 20-200 Å

thick.

11. The spin valve type magnetoresistive sensor of claim 10 wherein said active and pinned ferromagnetic layers are substantially 100 Å

thick.

12. The spin valve type magnetoresistive sensor of claim 1 wherein said non-magnetic spacer layer comprises a noble metal.

13. The spin valve type magnetoresistive sensor of claim 1 wherein said non-magnetic spacer layer is substantially between 10-50 Å

thick.

14. The spin valve type magnetoresistive sensor of claim 1 wherein said pinning layer comprises an exchange coupled antiferromagnet.

15. The spin valve type magnetoresistive sensor of claim 14 wherein said exchange coupled antiferromagnet is selected from a group consisting of (FeMN, NiMn or NiCoO).

16. The spin valve type magnetoresistive sensor of claim 1 wherein said pinning layer comprises a permanent magnet layer.

17. The spin valve type magnetoresistive sensor of claim 16 wherein said permanent magnet layer is selected from a group consisting of (Cr and its alloys).

18. The spin valve type magnetoresistive sensor of claim 16 wherein said permanent magnet layer is substantially between 50-500 Å

thick.

19. The spin valve type magnetoresistive sensor of claim 1 wherein said tapered opposing sides form an acute angle with respect to a plane of said pinned ferromagnetic layer.

20. The spin valve type magnetoresistive sensor of claim 19 wherein said acute angle is substantially 45°

.

21. The spin valve type magnetoresistive sensor of claim 1 wherein said separation layer comprises Cr.

22. The spin valve type magnetoresistive sensor of claim 21 wherein said separation layer is substantially 50 Å

thick.

23. The spin valve type magnetoresistive sensor of claim 1 further comprising:

a permanent magnet layer overlying said separation layer.

24. The spin valve type magnetoresistive sensor of claim 23 further comprising:

a conductor layer overlying at least a portion of said permanent magnet layer.

25. The spin valve type magnetoresistive sensor of claim 24 further comprising:

a capping layer overlying said conductor, permanent magnet and active ferromagnetic layers.

26. The spin valve type magnetoresistive sensor of claim 25 wherein said capping layer comprises Ta.

27. The spin valve type magnetoresistive sensor of claim 26 further comprising:

a gap layer overlying said capping layer.

28. The spin valve type magnetoresistive sensor of claim 27 wherein said gap layer is selected from a group consisting of (oxides of Al or Si).

29. The spin valve type magnetoresistive sensor of claim 1 further comprising:

an additional separation layer interposed between said pinning layer and said pinned ferromagnetic layer.

30. The spin valve type magnetoresistive sensor of claim 29 wherein said additional separation layer is selected from a group consisting of (Cr or Ta).

31. The spin valve type magnetoresistive sensor of claim 29 wherein said additional separation layer is substantially between 10-100 Å

thick.

32. A magnetoresistive device comprising:

a substrate;

a pinning layer overlying said substrate;

a first ferromagnetic layer overlying said pinning layer;

a spacer layer overlying a first selected portion of said first ferromagnetic layer, said spacer layer presenting a first mesa structure having tapered opposing first and second sides thereof;

a second ferromagnetic layer overlying said first mesa structure of said spacer layer, said second ferromagnetic layer presenting a second mesa structure having tapered opposing first and second sides thereof;

first and second separation layer portions overlying said first ferromagnetic layer and said first and second mesa structures at said first and second sides thereof, said first and second separation layer portions also overlying a preselected portion of an upper surface of said second ferromagnetic layer adjoining said first and second sides thereof;

first and second permanent magnet layer portions overlying said first and second separation layer portions;

first and second conductor layer portions overlying a selected portion of said first and second permanent magnet layer portions respectively; and

a capping layer overlying said first and second conductor layer portions, said first and second permanent magnet layer portions and said upper surface of said second mesa not overlain by said permanent magnet layer portions.

33. The magnetoresistive device of claim 32 further comprising:

an underlayer interposed between said substrate and said pinning layer.

34. The magnetoresistive device of claim 33 wherein said underlayer comprises Ta.

35. The magnetoresistive device of claim 32 wherein said substrate is selected from a group consisting of (Si, Al₂ O₃ -TiC or glass).

36. The magnetoresistive device of claim 32 wherein said pinning layer comprises an antiferromagnetic material selected from a group consisting of (FeMn, NiMn or NiCoO).

37. The magnetoresistive device of claim 32 wherein said pinning layer comprises a permanent magnet layer.

38. The magnetoresistive device of claim 37 wherein said permanent magnet layer is selected from a group consisting of (Co and its alloys).

39. The magnetoresistive device of claim 37 wherein said permanent magnet layer is substantially between 50-500 Å

thick.

40. The magnetoresistive device of claim 32 wherein said first and second ferromagnetic layers comprise a material selected from a group consisting of (transition metals or alloys).

41. The magnetoresistive device of claim 32 wherein said spacer layer is selected from a group consisting of (Cu, Ag, Au or Pd).

42. The magnetoresistive device of claim 32 wherein said first and second separation layer portions comprise a nonmagnetic material.

43. The magnetoresistive device of claim 42 wherein said nonmagnetic material comprises Cr.

44. The magnetoresistive device of claim 42 wherein said first and second separation layer portions are substantially 50 Å

thick.

45. The magnetoresistive device of claim 32 wherein said first and second permanent magnet layer portions are selected from a group consisting of (Co or its alloys).

46. The magnetoresistive device of claim 32 wherein said first and second conductor layer portions are selected from a group consisting of (Cu, Ag or Au).

47. The magnetoresistive device of claim 32 wherein said capping layer comprises Ta.

48. The magnetoresistive device of claim 33 wherein said tapered opposing first and second sides of said first and second mesa structures are substantially coplanar.

49. The magnetoresistive device of claim 32 wherein said tapered opposing first and second sides of said first and second mesa structures form a substantially acute angle with respect to a plane of said substrate.

50. The magnetoresistive device of claim 49 wherein said acute angle is substantially 45°

.

51. The magnetoresistive device of claim 32 wherein a distance between said first and second permanent magnet layer portions defines an active area of said magnetoresistive device.