Polishing method

• US 5,609,511 A
• Filed: 04/13/1995
• Issued: 03/11/1997
• Est. Priority Date: 04/14/1994
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Furusawa, Takeshi, Kusukawa, Kikuo, Homma, Yoshio, Kawamura, Yoshio, Moriyama, Shigeo
• Primary Examiner(s): Kisliuk, Bruce M.
• Assistant Examiner(s): BANKS, DERRIS HOLT
• Application Number:
  US08/421,247
• Time in Patent Office: 698 Days
• Field of Search: 451/5, 451/6, 451/7, 451/8, 451/10, 451/21, 451/41, 451/42, 451/53, 451/54, 451/55, 451/60, 451/63, 451/259, 451/283, 451/285, 451/287, 451/288, 451/289, 451/290, 451/364, 451/384, 451/397 , 451/402
• US Class Current: 451/5
• CPC Class Codes: B24B 37/013 Devices or means for detecting lapping completion
• CPC Class Codes: B24B 49/12 involving optical means
• CPC Class Codes: B24D 7/12 with apertures for inspecting the surface to be abraded

Abstract

Disclosed is a method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing the substrate on the surface of a polishing pad and relatively moving the substrate and the polishing pad, the method comprising the steps of: detecting the position of a front surface of the thin film layer to be polished using a first sensor and also detecting the position of a bottom surface of the thin film layer using a second sensor, on the way of the polishing; calculating the residual thickness of the thin film layer on the basis of the detected positions of the front and bottom surfaces of the thin film layer; and controlling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of the thin film layer.

Claims

1. A method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing said substrate on the surface of a polishing pad and relatively moving said substrate and said polishing pad, said method comprising the steps of:

detecting the position of a front surface of said thin film layer to be polished using a first sensor and also detecting the position of a bottom surface of said thin film layer using a second sensor, on the way of said polishing;

calculating the residual thickness of said thin film layer on the basis of the detected positions of the front and bottom surfaces of said thin film layer; and

controlling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of said thin film layer.

2. A polishing method according to claim 1, wherein said first sensor and said second sensor are provided on the side of said polishing pad in such a manner as to face to the surface of said substrate, and the front and bottom surfaces of said thin film layer are respectively detected as the distances from said first and second sensors to the front and bottom surfaces of said thin film layer.

3. A polishing method according to claim 2, wherein said second sensor has a detective resolution capable of detecting a topography on the bottom surface of said thin film layer.

4. A polishing method according to claim 2, wherein said residual thickness of said thin film layer is obtained on the basis of a differential signal between a second detection signal and a first detection signal, said second detection signal being obtained by said second sensor so as to correspond to the distance from said second sensor to the position of the bottom surface of said thin film layer, and said first detection signal being obtained by said first sensor so as to correspond to the distance from said first sensor to the position of the front surface of said thin film layer.

5. A polishing method according to claim 2, wherein said second sensor is of a type of illuminating and image-forming light on the bottom surface of said thin film layer in a spot shape, and on the basis of the optical information contained in the light reflected from the portion where the light is illuminated in the spot-shape, detecting the distance from said second sensor to the bottom surface of said thin film layer.

6. A polishing method according to claim 2, wherein said first and second sensors are fixed on a platen for supporting said polishing pad.

7. A polishing method according to claim 2, wherein said first sensor is a fluidic micrometer.

8. A polishing method according to claim 7, wherein an operating fluid in said fluidic micrometer is the same fluid as slurry used for polishing said thin film layer.

9. A polishing method according to claim 2, wherein said first sensor is of a type of illuminating light on the surface of said thin film layer at an angle larger than a critical reflection angle determined by refractive indexes of said thin film layer and said slurry, and on the basis of the optical information contained in the light reflected from said surface of said thin film layer, detecting the distance from said first sensor to the front surface of said thin film layer.

10. A method of polishing a thin film layer to be polished, which is formed on the surface of a substrate, by pressing said substrate on the surface of a polishing pad and relatively moving said substrate and said polishing pad. said method comprising the steps of:

directly detecting the distance from the position of a front surface of said thin film layer to be polished to the position of a bottom surface of said thin film layer using a sensor on the way of said polishing;

calculating the residual thickness of said thin film layer on the basis of said detected distance; and

controlling the processing condition of the subsequent polishing on the basis of the calculated residual thickness of said thin film layer;

wherein said sensor is provided on the side of said polishing pad in such a manner as to face the surface of said substrate, and the distance between the positions of the front and bottom surfaces of said thin film layer is directly detected as a differential value between the distance from said detector to the front surface of said thin film layer and the distance from said detector to the bottom surface of said thin film layer.

11. A polishing method according to claim 10, wherein said detector is of a type of illuminating and image-forming light on the bottom surface of said thin film layer in a spot-shape, and on the optical information contained in the light reflected from the portion where the light is illuminated in the spot-shape, detecting a differential value between the distance from said detector to the front surface of said thin film layer and the distance from said detector to the bottom surface of said thin film layer.

12. A polishing method according to claim 10, wherein said detector has a detective resolution capable of detecting a topography of the bottom surface of said thin film layer.

13. A polishing method according to claim 10, wherein said sensor has a function of detecting a reflective index of the bottom surface of said thin film layer.