Microelectromechanical lateral accelerometer

• US 5,610,335 A
• Filed: 05/19/1994
• Issued: 03/11/1997
• Est. Priority Date: 05/26/1993
• Status: Expired due to Term

• Current Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Original Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Inventors: Shaw, Kevin A., MacDonald, Noel C., Adams, Scott G.
• Primary Examiner(s): Oda, Christine K.
• Application Number:
  US08/246,265
• Time in Patent Office: 1,027 Days
• Field of Search: 73/505, 73/504, 73/517 A, 73/517 R, 73/514.01, 73/514.16, 73/514.21, 73/514.23, 73/514.32, 73/514.36, 73/514.38
• US Class Current: 73/514.36
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2203/0109 Bridges
• CPC Class Codes: B81B 2203/0136 Comb structures
• CPC Class Codes: B81B 3/0051 For defining the movement, i.e. structures that guide or limit the movement of an element mechanical arrangements for preventing or damping vibration or shock H01H3/60
• CPC Class Codes: G01P 1/006 used for thermal compensation
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/131 with electrostatic counterbalancing means
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type
• CPC Class Codes: G01P 2015/0831 the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
• CPC Class Codes: G01R 33/0286 comprising microelectromechanical systems [MEMS] MEMS devices in general B81B

Abstract

A microelectromechanical accelerometer having submicron features is fabricated from a single crystal silicon substrate. The accelerometer includes a movable portion incorporating an axial beam carrying laterally-extending high aspect ratio released fingers cantilevered above the floor of a cavity formed in the substrate during the fabrication process. The movable portion is supported by restoring springs having controllable flexibility to vary the resonant frequency of the structure. A multiple-beam structure provides stiffness in the movable portion for accuracy.

Claims

1. A microelectromechanical accelerometer fabricated by single mask reactive ion etching comprising:

a single crystal silicon substrate;

a single crystal silicon movable beam element fabricated from said single crystal silicon substrate by a deep vertical silicon reactive ion etch to produce a trench having vertical sidewalls surrounding the beam element and forming a cavity in said substrate, followed by an isotropic dry etch to thereafter release the beam element from the substrate;

a resilient spring integral with said substrate and said beam element and fabricated from said substrate by said reactive ion etch and isotropic dry etch simultaneously with the formation of said movable beam element to support said beam element for relative motion with respect to said substrate, said spring urging said beam element to a rest position with the beam element being movable from its rest position in response to a force to be measured;

a mass on said beam element for providing a selected inertia to said beam element; and

a sensor fabricated in part on said beam element and in part on said substrate for measuring relative motion between said beam element and said substrate in response to said force to be measured.

2. The accelerometer of claim 1, wherein said beam element is mounted on said substrate within said cavity by means of said resilient spring, said beam element having ends released from said substrate for motion, said mass being located on said ends of said beam element.

3. The accelerometer of claim 2, wherein said resilient spring comprises a vertical post, said beam element being centrally supported on said post for motion in a horizontal plane, and wherein said mass comprises lateral arms extending from said ends of said beam element.

4. The accelerometer of claim 1, wherein said resilient spring is a longitudinal shaft extending horizontally through said cavity, wherein said beam is mounted for rotation about said shaft, and wherein said mass comprises nonsymmetrical elements on lateral sides of said beam, whereby acceleration having a vertical component causes torsional motion of said movable beam element around said shaft with respect to said substrate.

5. The accelerometer of claim 1, wherein said beam element is released from said substrate for motion, and wherein said resilient spring includes a plurality of lateral spring arms extending from opposite ends of said beam element.

6. The accelerometer of claim 1, wherein said sensor includes at least one integral lateral sensor finger movable with said beam element and at least one capacitive element mounted on said substrate adjacent said sensor finger.

7. The accelerometer of claim 1, wherein said sensor includes plural integral lateral sensor fingers, and plural capacitive elements mounted on said substrate and interleaved with said sensor fingers.

8. The accelerometer of claim 1, further including control means for said resilient spring to regulate the response of said beam element to acceleration.

9. The accelerometer of claim 1 wherein said resilient spring comprises a vertical post, said sensor includes laterally extending arms integral with said beam, and said mass includes extension weights integral with said beam.

10. The accelerometer of claim 1, wherein said spring is fabricated by said reactive ion etch and isotropic dry etch to extend as a cantilever from said substrate to support said beam for torsional motion in response to said force to be measured.

11. The accelerometer of claim 1, wherein said movable beam element and spring are fabricated in said substrate by depositing an oxide layer on a surface of said substrate layer, patterning a resist layer on said oxide layer, etching said oxide layer to transfer the pattern to the oxide layer, and thereafter utilizing said deep vertical silicon reactive ion etch to etch said substrate in said pattern.

12. The accelerometer of claim 11, wherein said movable beam element and spring are fabricated by depositing a protective oxide layer on said trench walls and thereafter deepening said trench below said protective layer prior to said isotropic dry etch.

13. The accelerometer of claim 12, wherein said sensor includes an electrically conductive layer applied to opposed portions of said released beam element and said substrate, said conductive layer being selectively etched to provide opposed capacitor plates.

14. The accelerometer of claim 13, further including contact pads on said substrate, said pads being fabricated from said electrically conductive layer and electrically connected to selected capacitor plates.

15. The accelerometer of claim 14, wherein said substrate is a circuit wafer containing electrical circuitry, said circuitry being connected through electrical connectors fabricated in said conductive layer to said contract pads and thereby being connected to selected said capacitor plates for sensing relative motion of said beam element and said substrate.

16. The accelerometer of claim 1, wherein said mass comprises a layer of metal on said beam element electrically isolated from said sensor.

17. The accelerometer of claim 16, wherein said beam element comprises a multiplicity of substantially parallel beams spaced laterally, and wherein said mass is carried by said parallel beams.

18. The accelerometer of claim 17, wherein said mass is tungsten.

19. The accelerometer of claim 1, wherein said beam element includes opposed end portions released from said substrate for motion with respect to said resilient spring.

20. The accelerometer of claim 19, wherein said beam element includes a central portion between said end portions, and wherein said resilient spring is a vertical pedestal located in said cavity and integral with said central portion of said beam for supporting said beam element for torsional motion in a horizontal plane.

21. The accelerometer of claim 1, wherein said substrate is an integrated circuit wafer containing electrical circuitry, and further including a conductor on said substrate connecting said sensor to said circuit.

22. A microelectromechanical force detector, comprising:

an integrated circuit wafer of single crystal silicon carrying circuit elements for connecting a detector to circuitry on said wafer;

a cavity formed in a surface of said wafer;

a horizontal, movable, single crystal silicon beam element fabricated from said wafer and located in said cavity;

a vertical pedestal located in said cavity, fabricated from said wafer, and integral with said wafer and said beam element, said pedestal supporting said beam element for torsional motion about the pedestal in a horizontal plane in response to an applied force;

an electrically conductive layer on said wafer and on said beam element

a sensor having a first component comprising a first portion of said electrically conductive layer on said relative motion with respect to said first component, said first and second components including first and second capacitor plates, respectively, whereby an applied force causes relative motion of said capacitor plates to vary the capacitance therebetween for detecting said force; and

an electrical connector between said first portion of said conductive layer and said circuit elements, whereby said sensor is connectable to circuitry on said wafer.

23. The detector of claim 22, wherein said first sensor component comprises a lateral, arcuate electrode mounted on said substrate, and wherein said second component is an arcuate sensor finger integrally formed at an end of said beam element, said second component being adjacent said first component whereby relative motion of said components produces a measurable change of the capacitance therebetween to detect said relative motion.

24. The detector of claim 23, wherein said first and second sensor components are horizontally coplanar with said beam element.

25. The detector of claim 22, wherein said beam element is elongated, having a central portion mounted on said pedestal and two ends spaced from said pedestal, said second sensor component comprising an arcuate sensor finger integrally formed at each end of said beam element and wherein said first sensor component comprises an arcuate electrode mounted on said wafer adjacent each said sensor finger.

26. The detector of claim 25, wherein said first component comprises plural arcuate electrodes mounted on said wafer adjacent each said sensor finger.

27. The detector of claim 26, further including extension weights integral with said beam and located at each end thereof.

28. The detector of claim 27, wherein each extension weight is mounted on an extension arm coaxial with and coplanar with said beam.

29. A method of detecting torsional acceleration, comprising:

defining, on the surface of an integrated circuit wafer containing integrated circuit elements, a pattern for a movable accelerometer component and a stationary accelerometer component, the movable component including at least a horizontal portion and a vertical spring arm portion for mechanically supporting said horizontal portion;

etching, by vertical reactive ion etching, a trench surrounding said pattern to produce in said wafer a cavity having a vertical side wall and containing mesas having vertical side walls in said pattern;

coating said side walls with a protective layer;

deepening said trenches by further reactive ion etching;

undercutting said mesas in said pattern by an isotropic dry etch to release at least said horizontal movable component, from said wafer while retaining a mechanical connection between said spring arm portion and said wafer to support said movable component for rotational movement in a horizontal plane within said cavity;

coating said released movable component and said stationary component with a conformed electrically conductive layer; and

patterning said conductive layer to produce first and second opposed capacitor plates on said movable and stationary components, respectively, and to electrically connect said plates to said integrated circuit elements, whereby relative motion between said movable and stationary components due to acceleration of said wafer changes the capacitance between said opposed capacitor plates to produce a corresponding output signal representing said acceleration.