Integrated pressure sensor with remote power source and remote read-out

• US 5,610,340 A
• Filed: 06/23/1995
• Issued: 03/11/1997
• Est. Priority Date: 06/23/1995
• Status: Expired due to Fees

• Current Assignee: New Jersey Institute of Technology
• Original Assignee: New Jersey Institute of Technology
• Inventors: Carr, William N., Chamarti, Subramanyam
• Primary Examiner(s): Dougherty, Elizabeth L.
• Assistant Examiner(s): Noori, Max H.
• Application Number:
  US08/494,097
• Time in Patent Office: 627 Days
• Field of Search: 73/700, 73/718, 73/719, 73/723, 73/724, 73/727, 73/753, 73/754, 73/755, 73/146.5
• US Class Current: 73/718
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: G01L 9/12 by making use of variations in capacitance , i.e. electric circuits therefor

Abstract

An integrated structure pressure sensor that is powered by induction and read out by induction and includes no integral power source, includes an oscillator circuit that is responsive to pressure variations. The oscillator circuit includes a capacitor having an electrode that is susceptible to induced stress and movement by an external source of pressure. A depletion mode semiconductor is preferably present in the circuit and includes source, drain and gate contacts. A first inductor is coupled between the source and drain contacts and is arranged to respond to an inductively induced voltage to enable current flow between the source and drain contacts. A second inductor in the circuit has a first terminal coupled to the source contact and a second terminal coupled to both the capacitor and the gate contact. The second inductor is arranged to respond to an inductively induced voltage to bias the semi-conductor for conduction. The power induction device is positioned external to the semiconductor structure and induces voltages in the first and second inductors, those voltages causing the circuit to oscillate at a frequency that is dependent upon a pressure level exerted on the capacitor by the external source of pressure. A sense circuit is positioned external to the semiconductor structure and is inductively coupled to the circuit for sensing the frequency of oscillation thereof as an indication of the pressure level.

Claims

1. An integrated structure pressure sensor system that is powered by induction and read out by induction, said structure including a circuit comprising:

capacitor means in said circuit and including at least one electrode that is susceptible to induced stress and movement by an external source of pressure;

a transistor in said circuit, including source, drain and gate contacts;

a first inductor in said circuit, connected between said source and drain contacts and arranged to respond to an inductively induced voltage to enable current flow between said source and drain contacts;

a second inductor in said circuit, having a first terminal coupled to said source contact and a second terminal coupled to both said capacitor means and said gate contact, said second inductor arranged to respond to an inductively induced voltage to bias said transistor for conduction;

said capacitor means, first inductor, transistor and second inductor comprising a resonant oscillation circuit;

said system further comprising;

induction means external to said structure for inducing voltages in said first inductor and said second inductor, said voltages causing said circuit to oscillate at a resonant frequency that is dependent on a pressure level exerted on said capacitor means by said external source of pressure; and

sense means, external to said structure and inductively coupled to said circuit, for sensing said resonant frequency as an indication of said pressure level.

2. An integrated structure pressure sensor system as recited in claim 1, wherein said transistor is a depletion mode field effect transistor and said first inductor and second inductor are arranged to induce additive voltages in said circuit.

3. An integrated structure pressure sensor system as recited in claim 1, wherein said transistor is an enhancement mode field effect transistor and said first inductor and second inductor are arranged to induce subtractive voltages in said circuit.

4. An integrated structure pressure sensor system as recited in claim 1, wherein said capacitor means is coupled between said gate and drain contacts and in parallel with said first inductor and said second inductor, said capacitor means including at least three plates, a first plate coupled to said gate contact, a second plate coupled to said drain contact and a third plate separated from said first plate and second plate by a dielectric medium.

5. An integrated structure pressure sensor system as recited in claim 4, wherein said structure further comprises:

a top wafer including an upper surface, a bottom interface plane having an insulating region and said third plate in contact with said insulating region;

a bottom wafer bonded to said bottom interface plane of said top wafer and including said first plate and

second plate disposed in positional opposition to said third plate and separated therefrom by said dielectric medium, and further including said semiconductor.

6. An integrated structure pressure sensor system as recited in claim 5, wherein said upper surface of said top wafer includes an opening which extends through a thickness of said top wafer to said insulating region in a vicinity of said third plate to enable pressure of a fluid in said opening to be transmitted to said third plate and to alter a distance between said third plate and said first and second plates, and said resonant frequency of oscillation.

7. An integrated structure pressure sensor system as recited in claim 6, wherein said bottom wafer includes an upper surface on which resides conductive windings comprising said first inductor and second inductor and an alignment protrusion, and wherein said bottom interface plane of said top wafer includes an inset which mates with said conductive windings and an alignment inset which mates with said alignment protrusion to enable alignment of said top wafer and bottom wafer during fabrication.

8. An integrated structure pressure sensor system as recited in claim 1 wherein said induction means generates a varying level oscillation voltage for induction into said first inductor and second inductor.

9. An integrated structure pressure sensor system as recited in claim 8, wherein said sense means comprises a swept spectrum receiver having a frequency range that encompasses an expected range of resonant oscillation frequencies of said circuit.

10. An integrated structure pressure sensor system as recited in claim 9, further comprising:

processor means for concurrently energizing said induction means and said sense means to synchronize operation of said sense means to a time when said circuit is oscillating.