Input/output electrostatic discharge protection circuit for an integrated circuit

• US 5,610,425 A
• Filed: 02/06/1995
• Issued: 03/11/1997
• Est. Priority Date: 02/06/1995
• Status: Expired due to Fees

• Current Assignee: Magotteaux International S/A (Magotteaux Incorporated), Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Mietus, David F., Quigley, John H.
• Primary Examiner(s): Jackson, Jr., Jerome
• Assistant Examiner(s): BOWERS, COURTNEY
• Application Number:
  US08/384,047
• Time in Patent Office: 764 Days
• Field of Search: 257/111, 257/112, 257/159, 257/175, 257/133, 257/551, 257/603, 257/139, 257/140, 257/141, 257/357, 257/355, 257/356, 257/328, 257/338, 257/358, 361/90, 361/91
• US Class Current: 257/358
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/0262 including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An Input/Output (I/O) circuit (11) for an integrated circuit including Electrostatic Discharge Protection (ESD) circuitry is disclosed. A Silicon Controlled Rectifier SCR (30) is triggered by a transistor (36) which is scaled to an output transistor (24) of the I/O circuit (11) to shunt an ESD event. The SCR (30) couples between a pad (12) and a power supply line V_SS. The transistor (36) is disabled. The triggering mechanism is voltage breakdown of the transistor (36) due to an ESD event. The SCR protection mechanism is process independent since the triggering mechanism is formed similarly to the output transistor (24) and thus breaks-down similarly. Zener diodes (26-29) are coupled to gates of the I/O circuit (11) and between the power supply lines. A phosphorous doping less than 5.0 E18 per cubic centimeter is used to form the cathode of zener diodes (26-29).

Claims

1. An Electrostatic Discharge (ESD) protection circuit for a pad of an integrated circuit, the ESD circuit comprising:

a Silicon Controlled Rectifier (SCR) comprising;

a first transistor having a first electrode, a control electrode, and a second electrode coupled to the pad wherein said first transistor is a bipolar PNP transistor;

a second transistor having a first electrode coupled to said control electrode of said first transistor, a control electrode coupled to said first electrode of said first transistor, and second electrode coupled for receiving a first power supply voltage wherein said second transistor is a bipolar NPN transistor;

a first resistor having a first terminal coupled to the pad and a second terminal coupled to said control electrode of said first transistor;

a second resistor having a first terminal coupled to said first electrode of said first transistor and a second terminal coupled for receiving said first power supply voltage;

a third transistor for triggering said SCR having a first electrode coupled to said control electrode of said first transistor, a control electrode coupled for receiving said first power supply voltage, and second electrode coupled to said first electrode of said first transistor wherein said third transistor is disabled by said first power supply voltage, wherein an ESD event breaks-down said third transistor for enabling said SCR, and wherein said third transistor is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET);

an output stage comprising;

a p-channel enhancement MOSFET having a drain, a gate coupled for receiving a first control signal, and a source coupled for receiving a second power supply voltage;

a first resistor having a first terminal coupled to said drain of said p-channel enhancement MOSFET and a second terminal coupled to the pad;

a second resistor having a first terminal coupled to the pad and a second terminal;

a n-channel enhancement MOSFET having a drain coupled to said second terminal of said second resistor, a gate coupled for receiving a second control signal, and a source coupled for receiving said first power supply voltage;

a first zener diode having an anode coupled to said gate of said p-channel enhancement MOSFET and a cathode coupled for receiving said second power supply voltage; and

a second zener diode having an anode coupled for receiving said first power supply voltage and a cathode coupled to said gate of said n-channel enhancement MOSFET.

2. The Electrostatic Discharge (ESD) circuit of claim 1 wherein said third transistor of said SCR is a n-channel enhancement MOSFET formed similarly to said n-channel enhancement MOSFET of said output stage and wherein said third transistor of said SCR and said n-channel enhancement MOSFET of said output stage breakdown similarly due to an ESD event.

3. The Electrostatic Discharge (ESD) protection circuit of claim 1 further including:

a first diode having an anode coupled to the pad and a cathode coupled for receiving a second power supply voltage; and

a second diode having an anode coupled for receiving said first power supply voltage and a cathode coupled to the pad.

4. The Electrostatic Discharge (ESD) protection circuit of claim 1 further including a zener diode having an anode coupled for receiving said first power supply voltage and a cathode coupled for receiving a second power supply voltage.

5. The Electrostatic Discharge (ESD) protection circuit of claim 1 further including an input stage comprising:

a p-channel enhancement MOSFET having a drain, a gate, and a source coupled for receiving a second power supply voltage;

a n-channel enhancement MOSFET having a drain coupled to said drain of said p-channel enhancement MOSFET, a gate coupled to said gate of said p-channel enhancement MOSFET, and a source coupled for receiving said first power supply voltage;

a resistor having a first terminal coupled to the pad and a second terminal coupled to said gate of said p-channel enhancement MOSFET; and

a zener diode having an anode coupled for receiving said first power supply voltage and a cathode coupled to said gate of said p-channel enhancement MOSFET.

6. An Input/Output (I/O) circuit of an integrated circuit having Electrostatic Discharge (ESD) protection circuitry for preventing an ESD event from damaging circuitry of the integrated circuit, the I/O circuit comprising:

a first output transistor of a first conductivity type having a first electrode, a control electrode coupled for receiving a first output control signal, and a second electrode coupled for receiving a first power supply voltage;

a first resistor having a first terminal coupled to a pad and a second terminal coupled to said first electrode of said first output transistor;

a bipolar PNP transistor having a collector, a base, and an emitter coupled to said pad;

a second resistor having a first terminal coupled to said pad and a second terminal coupled to said base of said bipolar PNP transistor;

a third resistor having a first terminal coupled to said collector of said bipolar PNP transistor and a second terminal coupled for receiving said first power supply voltage;

a bipolar NPN transistor having a collector coupled to said base of said bipolar PNP transistor, a base coupled to said collector of said bipolar PNP transistor, and an emitter coupled for receiving said first power supply voltage;

a first transistor of said first conductivity type having a first electrode coupled to said base of said bipolar PNP transistor, a control electrode coupled for receiving said first power supply voltage, and a second electrode coupled to said collector of said bipolar PNP transistor;

a second output transistor of a second conductivity type having a first electrode, a control electrode coupled for receiving a second output control signal, and a second electrode coupled for receiving a second power supply voltage;

a fourth resistor having a first terminal coupled to said first electrode of said second output transistor and a second terminal coupled to said pad;

a first zener diode having an anode coupled to said control electrode of said second output transistor and a cathode coupled for receiving said second power supply voltage; and

a second zener diode having an anode coupled for receiving said first power supply voltage and a cathode coupled to said control electrode of said first output transistor.

7. The Input/Output (I/O) circuit as recited in claim 6 wherein said first output transistor and said first transistor are similarly formed and wherein said first resistor is a ballast resistor for distributing current equally throughout said first output transistor.

8. The Input/Output (I/O) circuit as recited in claim 7 wherein said first transistor is disabled and wherein said first transistor breaks-down under the ESD event for providing base current to said bipolar PNP and NPN transistors.

9. The Input/Output (I/O) circuit as recited in claim 6 further including a third zener diode having an anode coupled for receiving said first power supply voltage and a cathode coupled for receiving said second power supply voltage.

10. The Input/Output (I/O) circuit as recited in claim 9 further including:

a second transistor of said second conductivity type having a first electrode, a control electrode, and a second electrode coupled for receiving said second power supply voltage;

a third transistor of said first conductivity type having a first electrode coupled to said first electrode of said second transistor, a control electrode coupled to said control electrode of said second transistor, and a second electrode coupled for receiving said first power supply voltage;

a fifth resistor having a first terminal coupled to said control electrode of said second transistor and a second terminal coupled to said pad; and

a fourth zener diode having an anode coupled for receiving said first power supply voltage and a cathode coupled to said control electrode of said second transistor.

11. The Input/Output (I/O) circuit as recited in claim 10 wherein said first, second, third, and fourth zener diodes each have said cathode formed from a phosphorous implant having a doping less than 5.0 E18 per cubic centimeter.

12. The Input/Output (I/O) circuit as recited in claim 6 further including:

a first diode having an anode coupled for receiving said first power supply voltage and a cathode coupled to said pad; and

a second diode having an anode coupled to said pad and a cathode coupled for receiving a second power supply voltage.