Schottky barrier rectifiers and methods of forming same

• US 5,612,567 A
• Filed: 05/13/1996
• Issued: 03/18/1997
• Est. Priority Date: 05/13/1996
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: North Carolina State University (University of North Carolina System)
• Inventors: Baliga, Bantval J.
• Primary Examiner(s): Saadat, Mahshid D.
• Assistant Examiner(s): Soward, Ida M.
• Application Number:
  US08/645,231
• Time in Patent Office: 309 Days
• Field of Search: 257/475, 257/476, 257/655, 257/657, 257/622, 257/623, 257/510, 257/513, 257/514, 257/515, 257/471, 257/480, 257/267, 257/656, 257/595, 257/596, 257/597, 257/598, 257/599 , 257/600, 257/264, 257/481, 257/482, 257/603, 257/917
• US Class Current: 257/475
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

A Schottky rectifier includes MOS-filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally nonuniformly doped drift region therein which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage drop. The nonuniformly doped drift region contains a concentration of first conductivity type dopants therein which increases monotonically in a direction away from a Schottky rectifying junction formed between the anode electrode and the drift region. A profile of the doping concentration in the drift region is preferably a linear or step graded profile with a concentration of less than about 5×10¹⁶ cm^-3 (e.g., 1×10¹⁶ cm^-3) at the Schottky rectifying junction and a concentration of about ten times greater (e.g., 3×10¹⁷ cm^-3) at a junction between the drift region and a cathode region. The thickness of the insulating regions (e.g., SiO₂) in the MOS-filled trenches is also greater than about 1000 Å to simultaneously inhibit field crowding and increase the breakdown voltage of the device. The nonuniformly doped drift region is preferably formed by epitaxial growth from the cathode region and doped in-situ.

Claims

1. A Schottky rectifier, comprising:

a semiconductor substrate having first and second opposing faces;

a cathode region of first conductivity type in said semiconductor substrate, adjacent the first face;

a drift region of first conductivity type in said semiconductor substrate, said drift region extending between said cathode region and the second face and having a concentration of first conductivity type dopants therein which increases monotonically in a direction from the second face to said cathode region;

a cathode electrode contacting said cathode region;

a trench in said semiconductor substrate at the second face, said trench having a bottom and sidewall extending adjacent said drift region;

an insulating region on the sidewall; and

an anode electrode on the second face and on said insulating region, said anode electrode forming a Schottky rectifying junction with said drift region at the second face.

2. The Schottky rectifier of claim 1, wherein said drift region forms a nonrectifying junction with said cathode region and wherein the concentration of first conductivity type dopants in said drift region is greater than about 1×

10¹⁷ cm^-3 at the nonrectifying junction.

3. The Schottky rectifier of claim 2, wherein the concentration of first conductivity type dopants in said drift region is less than about 2×

10¹⁶ cm^-3 at the second face.

4. The Schottky rectifier of claim 3, wherein a profile of the concentration of first conductivity type dopants in said drift region is a linear graded profile.

5. The Schottky rectifier of claim 3, wherein a profile of the concentration of first conductivity type dopants in said drift region is a step graded profile.

6. The Schottky rectifier of claim 1, wherein the concentration of first conductivity type dopants in said drift region at the second face is less than about 5×

10¹⁶ cm^-3 ;

wherein said drift region forms a nonrectifying junction with said cathode region; and

wherein the concentration of first conductivity type dopants in said drift region at the nonrectifying junction is greater than about ten times the concentration of first conductivity type dopants in said drift region at the second face.

7. The Schottky rectifier of claim 6, wherein said insulating region on the sidewall has a thickness greater than 1000 Å

.

8. The Schottky rectifier of claim 6, wherein a profile of the concentration of first conductivity type dopants in said drift region is a linear graded profile.

9. The Schottky rectifier of claim 6, wherein a profile of the concentration of first conductivity type dopants in said drift region is a step graded profile.

10. The Schottky rectifier of claim 1, wherein said insulating region on the sidewall has a thickness greater than 1000 Å

.

11. A Schottky rectifier, comprising:

a semiconductor substrate having first and second opposing faces;

a first trench in said semiconductor substrate at the second face;

an insulating region on a sidewall and bottom of said first trench;

a cathode region of first conductivity type in said semiconductor substrate, adjacent the first face;

a cathode electrode electrically coupled to said cathode region, at the first face;

an anode electrode on the second face and on said insulating region; and

a drift region of first conductivity type in said semiconductor substrate, said drift region forming a Schottky rectifying junction with said anode electrode, extending between said cathode region and the second face and having a concentration of first conductivity type dopants therein which is nonuniform in a direction orthogonal to the second face so that when said anode electrode is reverse biased relative to said cathode electrode an electric field profile which is entirely monotonically decreasing in a direction from the second face to said cathode region is established in said drift region.

12. The Schottky rectifier of claim 11, wherein said drift region forms a nonrectifying junction with said cathode region and wherein the concentration of first conductivity type dopants in said drift region is greater than about 1×

10¹⁷ cm^-3 at the nonrectifying junction.

13. The Schottky rectifier of claim 12, wherein the concentration of first conductivity type dopants in said drift region is less than about 2×

10¹⁶ cm^-3 at the second face.

14. The Schottky rectifier of claim 13, wherein a profile of the concentration of first conductivity type dopants in said drift region is a linear graded profile.

15. The Schottky rectifier of claim 13, wherein a profile of the concentration of first conductivity type dopants in said drift region is a step graded profile.

16. The Schottky rectifier of claim 11, wherein the concentration of first conductivity type dopants in said drift region is less than about 5×

10¹⁶ cm^-3 at the second face;

wherein said drift region forms a nonrectifying junction with said cathode region; and

wherein the concentration of first conductivity type dopants in said drift region at the nonrectifying junction is greater than about ten times the concentration of first conductivity type dopants in said drift region at the second face.

17. The Schottky rectifier of claim 16, wherein said insulating region on the sidewall of said first trench has a thickness greater than 1000 Å

.

18. The Schottky rectifier of claim 16, wherein a profile of the concentration of first conductivity type dopants in said drift region is a linear graded profile.

19. The Schottky rectifier of claim 16, wherein a profile of the concentration of first conductivity type dopants in said drift region is a step graded profile.

20. The Schottky rectifier of claim 11, wherein said insulating region on the sidewall of said first trench has a thickness greater than 1000 Å

.

21. The Schottky rectifier of claim 11, further comprising a second trench in said semiconductor substrate at the second face and adjacent said first trench to thereby define a mesa containing said drift region therein;

wherein said insulating region extends on a sidewall and bottom of said second trench;

wherein said anode electrode forms a Schottky rectifying junction with the mesa at the second face; and

wherein a concentration of first conductivity type dopants in the mesa is nonuniform in a direction orthogonal to the second face so that when said anode electrode is reversed biased relative to said cathode electrode an electric field profile, which is entirely monotonically decreasing in a direction from the second face to said cathode region, is established in a center of the mesa, as measured between the sidewalls of said first and second trenches.

22. The Schottky rectifier of claim 21, wherein said insulating region on the sidewall of said first trench has a thickness greater than 1000 Å

.

23. The Schottky rectifier of claim 22, wherein the concentration of first conductivity type dopants in said drift region is less than about 5×

10¹⁶ cm^-3 at the second face;

wherein said drift region forms a nonrectifying junction with said cathode region; and

wherein the concentration of first conductivity type dopants in said drift region at the nonrectifying junction is greater than about ten times the concentration of first conductivity type dopants in said drift region at the second face.

24. A Schottky rectifier, comprising:

a semiconductor substrate having first and second opposing faces, a pair of adjacent trenches of first depth at the second face, a cathode region of first conductivity type extending adjacent the first face and a drift region extending from said cathode region and between the pair of adjacent trenches to the second face, said drift region having a concentration of first conductivity type dopants therein which is nonuniform in a direction orthogonal to the second face;

an insulating region on sidewalls of the pair of adjacent trenches;

an anode electrode on said insulating region and on the second face, said anode electrode forming a Schottky barrier rectifying junction with said drift region at the second face;

a cathode electrode on the first face; and

wherein the nonuniformity of the concentration of first conductivity type dopants in said drift region is selected so that at the onset of reverse-bias breakdown of the Schottky barrier rectifying junction, the electric field in said drift region at a first position, which is equidistant from each of the pair of adjacent trenches and spaced from the second face by a distance equal to one-half the first depth, is greater than one-half the electric field in said drift region at a second position at the second face which is equidistant from each of the pair of trenches.

25. The Schottky rectifier of claim 24, wherein said drift region forms a nonrectifying junction with said cathode region and wherein the concentration of first conductivity type dopants in said drift region is greater than about 1×

10¹⁷ cm^-3 at the nonrectifying junction.

26. The Schottky rectifier of claim 25, wherein the concentration of first conductivity type dopants in said drift region is less than about 2×

10¹⁶ cm^-3 at the second face.

27. The Schottky rectifier of claim 26, wherein a profile of the concentration of first conductivity type dopants in said drift region is a linear graded profile.

28. The Schottky rectifier of claim 26, wherein a profile of the concentration of first conductivity type dopants in said drift region is a step graded profile.

29. The Schottky rectifier of claim 26, wherein said insulating region has a thickness greater than 1000 Å

.

30. A Schottky rectifier, comprising:

a silicon cathode region of first conductivity type;

a nonuniformly doped silicon drift region of first conductivity type on said silicon cathode region and forming a non-rectifying junction therewith, said drift region having a face thereon and a thickness of at least about 3.5 μ

m as measured between the face and the non-rectifying junction;

first and second adjacent trenches having depths of at least about 3.0 μ

m, at the face;

an insulating region having a thickness greater than about 1500 Å

on sidewalls of the first and second adjacent trenches;

an anode electrode on said insulating region and forming a Schottky barrier rectifying junction having a reverse-bias breakdown voltage greater than about 50 Volts with said drift region, at the face; and

a cathode electrode on said cathode region.

31. The Schottky rectifier of claim 30, wherein a first conductivity type doping concentration in said drift region is greater than about 1×

10¹⁷ cm^-3 at the non-rectifying junction and less than about 2×

10¹⁶ cm^-3 at the Schottky barrier rectifying junction.

32. The Schottky rectifier of claim 31, wherein a width of said drift region, as measured between said first and second adjacent trenches, is less than about 0.5 μ

m.

33. A Schottky rectifier, comprising:

a semiconductor substrate having first and second opposing faces and a drift region therein extending to the second face;

first and second adjacent trenches of first depth at the second face, said first and second adjacent trenches having sidewalls and bottoms extending adjacent said drift region;

first and second electrically insulating regions lining the sidewalls and bottoms of the first and second adjacent trenches, respectively;

an anode electrode on said first and second electrically insulating regions and on the second face, said anode electrode forming a Schottky barrier rectifying junction with said drift region at the second face;

a cathode electrode electrically coupled to said drift region;

wherein said drift region has a concentration of first conductivity type dopants therein which is nonuniform in a direction orthogonal to the second face; and

wherein the nonuniformity of the concentration of first conductivity type dopants in said drift region is selected so that at the onset of reverse-bias breakdown of the Schottky barrier rectifying junction, the electric field in said drift region at a first position, which is equidistant from each of said first and second adjacent trenches and spaced from the second face by a distance equal to one-half the first depth, is greater than one-half the electric field in said drift region at a second position at the second face which is equidistant from each of said first and second adjacent trenches.

34. The Schottky rectifier of claim 33, further comprising a cathode region of first conductivity type in said substrate, said cathode region extending between said drift region and the first face and forming a nonrectifying junction with said drift region;

and wherein the concentration of first conductivity type dopants in said drift region is greater than about 1×

10¹⁷ cm^-3 at the nonrectifying junction.

35. The Schottky rectifier of claim 34, wherein the concentration of first conductivity type dopants in said drift region is less than about 2×

10¹⁶ cm^-3 at the second face.

36. The Schottky rectifier of claim 34, wherein a profile of the concentration of first conductivity type dopants in said drift region is a linear graded profile.

37. The Schottky rectifier of claim 34, wherein a profile of the concentration of first conductivity type dopants in said drift region is a step graded profile.

38. The Schottky rectifier of claim 34, wherein said first and second electrically insulating regions have a thickness greater than 1000 Å

.